jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 1 / 3 - http://www.jjwdz.com jm e 1 75 - 16/18/ 20 description : 1 ) chip : double mesa scrs of reverse blocking high - voltage 2) chip area: 17.4 mm 20 mm ( edge gate thyristor) 3) technology : mesa glass passivation technology , multilayer metallization t echnology and non - void welding by vacuum welding technology typical application: reactive power compensation , solid state relay , power module, etc. absolute maximum ratings ( packaged into modules, unless otherwise specified, t c =25 ) parameter test conditions symbol value s unit operating junction temperature range t j - 40 - 125 repetitive peak off - state voltage t j =25 v drm 1600/1800/2000 v repetitive peak reverse voltage t j =25 v rrm 1600/1800/2000 v average on - state current t c =80 i t(av) 175 a peak on - state surge current tp=10ms i tsm 4000 a i 2 t value for fusing tp=10ms i 2 t 80000 a 2 s critical rate of rise of on - state current v d =2/3v drm i g =0.3a tp=200 s t j =125 di g /dt=0.3a/s di/dt 150 a/ s electrical characteristics ( pack aged into modules, unless otherwise specified, t c =25 ) parameter test conditions symbol value s unit peak on - state voltage i t = 550 a tp=380 s v tm 1.8 v r epetitive peak off - state current v d =v d rm t c =25 t c =1 25 i d rm1 i d rm2 100 30 a m a r epetitive peak reverse current v r =v r rm t c =25 t c =1 25 i rrm1 i rrm2 100 30 a m a triggering gate current v d =12v r l = 30 i gt 20 - 150 m a l atching current i g = 1.2 i g t i l 350 ma holding current i t = 1a i h 250 ma triggering gate voltage v d =12v r l = 30 v gt 2 v
jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 2 / 3 - http://www.jjwdz.com non trigge ring gate voltage v d =v drm t j =1 25 v gd 0. 25 v critical rate of rise of voltage v d =2/3v drm t j =1 25 gate ope n dv/dt 1000 v/ s m echanical c haracteristi c s module size 21 mm 18 mm module thickness 1.6 mm w elding area of cathode electrode 16.62 mm 15.56 m m w elding area of control electrode 2.3 mm 1 mm symbol working conditions 1) no severe mechanical shock as impact and drop off in the process of transportation, storage and working of product. 2) storage conditions t emperature: 5~40 relative humidity: 45% storage time: 3 days for the open package ; 3 months for the closed package 3) w elding conditions recommended solder component: sn63sb37 (or lead - free solder of liquid quadrant less than 240 ) recommended soldering conditio ns: shown in table 1 4) welding in the gate spot is recommended to be completed one - time by using fixture . if it is necessary to use a soldering iron , the temperature of soldering iron is controlled within 280 and time is controlled within 20s. k g a
jiejie microelectronics co.,ltd tel +86 - 513 - 83639777 - 3 / 3 - http://www.jjwdz.com table 1 sn63sb37 soldering conditions average heating rate 3 /s (max) preheating activation low limit of temperature t s (min) 100 upper limit of temperature t s (max) 150 t ime (min ~ max) t s 60 ~ 90s reflow zone m elting point temperature t l 1 83 (sn63sb37) peak temperature t p 240 (+0/ - 5 ) reflow time t p (peak temperature 5 ) 10 30s m elting time t l 40 60s maximum cooling rate 3.5 /s recommended process time 300 ~ 360s ordering information 100 200 150 250 sn63pb37 t p t l ts(max) ts(min) t s t l 6 0-90s (40 -60s) t p (10 -30s) j m e 1 7 5 - 1 6 j i e j i e m i c r o e l e c t r o n i c s c o . , l t d m o d u l e o f s e r i e s i t ( a v ) = 1 7 5 a 1 6 : v d r m / v r r m 1 6 0 0 v 1 8 : v d r m / v r r m 1 8 0 0 v 2 0 : v d r m / v r r m 2 0 0 0 v e : e d g e a n d c o r n e r g a t e
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