View AUIRF7640S2_8632935.PDF datasheet online --- IC-ON-LINE

Datasheet File OCR Text:

www.irf.com 1 8/16/10 AUIRF7640S2tr AUIRF7640S2tr1 applicable directfet outline and substrate outline directfet power mosfet automotive grade directfet isometric hexfet ? is a registered trademark of international rectifier. sb sc m2 m4 l4 l6 l8 description the AUIRF7640S2tr/tr1 combines the latest automotive hexfet? power mosfet silicon technology with the advanced directfet packaging platform to produce a best in class part for automotive class d audio amplifier applications. the directfet package i s compat- ible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convectio n soldering techniques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfe t package allows dual sided cooling to maximize thermal transfer in automotive power systems.this hexfet power mosfet optimizes gate charge, body diode reverse recovery and internal gate resistance to improve key class d audio amplifier performance factors such as efficiency, thd and emi. moreover the directfet packaging platform offers low paras itic inductance and resistance when compared to conventional wire bonded soic packages which improves emi performance by reducing th e voltage ringing that accompanies current transients. these features combine to make this mosfet a highly desirable component in automotive class d audio amplifier and other high sp eed switching systems. ?
?
!
"# #$
? %$&'()* ? %$+," )* ? %$+," %$*-) ? %$ )! &!& %$ *-) ? ! ../ 0 % ? ! # ? 1 ! ? &
2&2! & 2 ? % 3&"# " v (br)dss 60v r ds(on) typ. 27m max. 36m r g (typical) 3.5 q g (typical) 7.3nc absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t c = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 100c continuous drain current, v gs @ 10v (silicon limited) a i d @ t a = 25c continuous drain current, v gs @ 10v (silicon limited) i d @ t c = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t c = 25c power dissipation p d @t a = 25c power dissipation e as single pulse avalanche energy (thermally limited) mj e as (tested) single pulse avalanche energy tested value i ar avalanche current a e ar repetitive avalanche energy mj t p peak soldering temperature t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient CCC 63 r ja junction-to-ambient 12.5 CCC r ja junction-to-ambient 20 CCC c/w r j-can junction-to-can CCC 5.0 r j-pcb junction-to-pcb mounted 1.4 CCC linear derating factor w/c v see fig.18a, 18b, 15, 16 57 38 w 2.4 270 c max. 2115 84 60 20 -55 to + 175 0.2 5.8 30 77 downloaded from: http:///

2 www.irf.com surface mounted on 1 in. square cu (still air).
with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with smallclip heatsink (still air) notes through are on page 3 d s g static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 60 CCC CCC v ? v dss / t j breakdown voltage temp. coefficient CCC 0.1 CCC v/c r ds(on) static drain-to-source on-resistance CCC 27 36 m v gs(th) gate threshold voltage 3.0 4.0 5.0 v v gs(th) / t j gate threshold voltage coefficient CCC -11 CCC mv/c gfs forward transconductance 9.3 CCC CCC s r g gate resistance CCC 3.5 5.0 i dss drain-to-source leakage current CCC CCC 5 a CCC CCC 250 i gss gate-to-source forward leakage CCC CCC 100 na gate-to-source reverse leakage CCC CCC -100 dynamic characteristics @ t j = 25c (unless otherwise stated) q g total gate charge CCC 7.3 11 q gs1 pre-vth gate-to-source charge CCC 1.5 CCC q gs2 post-vth gate-to-source charge CCC 0.9 CCC nc q gd gate-to-drain charge CCC 3.0 CCC q godr gate charge overdrive CCC 1.9 CCC see fig. 6 and 17 q sw switch charge (q gs2 + q gd ) CCC 3.9 CCC q oss output charge CCC 5.3 CCC nc t d(on) turn-on delay time CCC 4.0 CCC t r rise time CCC 12 CCC t d(off) turn-off delay time CCC 6.3 CCC ns t f fall time CCC 6.2 CCC c iss input capacitance CCC 450 CCC c oss output capacitance CCC 160 CCC pf c rss reverse transfer capacitance CCC 48 CCC c oss output capacitance CCC 610 CCC c oss output capacitance CCC 120 CCC diode characteristics @ t j = 25c (unless otherwise stated) parameter min. typ. max. units i s continuous source current (body diode) a i sm pulsed source current (body diode) v sd diode forward voltage CCC CCC 1.3 v t rr reverse recovery time CCC 26 39 ns q rr reverse recovery charge CCC 24 36 nc mosfet symbol r g =6.8 v ds = 25v conditions v gs = 0v, v ds = 48v, f=1.0mhz v gs = 0v, v ds = 1.0v, f=1.0mhz v ds = 16v, v gs = 0v v dd = 30v, v gs = 10v v gs = 0v ? = 1.0mhz i d = 13a v ds = v gs , i d = 25 a v ds = 60v, v gs = 0v conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 13a v ds = 50v, i d = 13a t j = 25c, i f = 13a, v dd = 25v di/dt = 100a/ s t j = 25c, i s = 13a, v gs = 0v showing the integral reverse p-n junction diode. i d = 13a v ds = 48v, v gs = 0v, t j = 125c v gs = 20v v gs = -20v v gs = 10v v ds = 30v CCC CCC 21 CCC CCC 84 downloaded from: http:///

www.irf.com 3 4 +! 2! ) & 5$26 http://www.irf.com 44* 7
* + . 8! 8! 9 qualification information ? dfet2 msl1 rohs compliant yes esd machine model class b aec-q101-002 human body model class 2 aec-q101-001 charged device model class iv aec-q101-005 moisture sensitivity level qualification level automotive (per aec-q101) ?? comments: this part number(s) passed automotive qualification. irs industrial and consumer qualification level is granted by extension of the higher automotive level. click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.944mh, r g = 25 , i as = 8.9a. pulse width 400 s; duty cycle 2%.
used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at
downloaded from: http:///

4 www.irf.com fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical on-resistance vs. gate voltage fig 4. typical on-resistance vs. drain current fig 6. normalized on-resistance vs. temperature fig 5. typical transfer characteristics 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.001 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 25c 5.0v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 15v 10v 8.0v 7.0v 6.5v 6.0v 5.5v bottom 5.0v 60 s pulse width tj = 175c 5.0v 2 4 6 8 10 12 14 v gs , gate-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v ds = 25v 60 s pulse width 0 10 20 30 40 50 i d , drain current (a) 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 10v t j = 25c t j = 125c 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 v gs, gate -to -source voltage (v) 0 20 40 60 80 100 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 13a t j = 25c t j = 125c -60 -40 -20 0 20 40 60 80 100 120 140 160 180 t j , junction temperature (c) 0.5 1.0 1.5 2.0 2.5 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 13a v gs = 10v downloaded from: http:///

www.irf.com 5 fig 7. typical threshold voltage vs. junction temperature fig 8. typical source-drain diode forward voltage fig 9. typical forward transconductance vs. drain current fig 10. typical capacitance vs.drain-to-source voltage fig.11 typical gate charge vs.gate-to-source voltage fig 12. maximum drain current vs. case temperature -75 -50 -25 0 25 50 75 100 125 150 175 t j , temperature ( c ) 1.5 2.5 3.5 4.5 5.5 6.5 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a id = 250 a id = 1.0ma d = 1.0a 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = -40c tj = 25c tj = 175c v gs = 0v 0 4 8 12 16 20 24 i d ,drain-to-source current (a) 0 2 4 6 8 10 12 14 16 18 g f s , f o r w a r d t r a n s c o n d u c t a n c e ( s ) t j = 25c t j = 175c v ds = 5.0v 380 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681 0 q g , total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 80v v ds = 50v vds= 20v i d = 13a 25 50 75 100 125 150 175 t c , case temperature (c) 0 4 8 12 16 20 24 i d , d r a i n c u r r e n t ( a ) downloaded from: http:///

6 www.irf.com fig 14. maximum avalanche energy vs. temperature fig 13. maximum safe operating area fig 15. maximum effective transient thermal impedance, junction-to-case fig 16. typical avalanche current vs.pulsewidth 0 1 10 100 v ds , drain-tosource voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 175c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 20 40 60 80 100 120 140 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 2.5a 4.8a bottom 13a 1e-006 1e-005 0.0001 0.001 0.01 0.1 t 1 , rectangular pulse duration (sec) 0.001 0.01 0.1 1 10 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci i / ri ci= i / ri c 4 4 r 4 r 4 ri (c/w) i (sec) 0.49687 0.0001190.00517 8.231486 2.55852 0.018926 1.94004 0.002741 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 tav (sec) 0.1 1 10 100 a v a l a n c h e c u r r e n t ( a ) 0.05 duty cycle = single pulse 0.10 allowed avalanche current vs avalanche pulsewidth, tav, assuming ? j = 25c and tstart = 150c. 0.01 allowed avalanche current vs avalanche pulsewidth, tav, assuming tj = 150c and tstart =25c (single pulse) downloaded from: http:///

www.irf.com 7 fig 17. maximum avalanche energy vs. temperature notes on repetitive avalanche curves , figures 16, 17:(for further info, see an-1005 at www.irf.com) 1. avalanche failures assumption: purely a thermal phenomenon and failure occurs at a temperature far in excess of t jmax . this is validated for every part type.2. safe operation in avalanche is allowed as long ast jmax is not exceeded. 3. equation below based on circuit and waveforms shown in figures 18a, 18b. 4. p d (ave) = average power dissipation per single avalanche pulse.5. bv = rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. i av = allowable avalanche current. 7. t = allowable rise in junction temperature, not to exceed t jmax (assumed as 25c in figure 16, 17). t av = average time in avalanche. d = duty cycle in avalanche = t av f z thjc (d, t av ) = transient thermal resistance, see figure 11) p d (ave) = 1/2 ( 1.3bvi av ) = t/ z thjc i av = 2 t/ [1.3bvz th ] e as (ar) = p d (ave) t av fig 18b. unclamped inductive waveforms fig 18a. unclamped inductive test circuit t p v (br)dss i as fig 19a. gate charge test circuit fig 19b. gate charge waveform v ds 90%10% v gs t d(on) t r t d(off) t f fig 20a. switching time test circuit fig 20b. switching time waveforms vds vgs id vgs(th) qgs1 qgs2 qgd qgodr r g i as 0.01 t p d.u.t l v ds + - v dd driver a 15v 20v v gs 1k vcc dut 0 l s 20k
1 0.1 %

+ - 25 50 75 100 125 150 175 starting t j , junction temperature (c) 0 10 20 30 40 e a r , a v a l a n c h e e n e r g y ( m j ) top single pulse bottom 1% duty cycle i d = 13a downloaded from: http:///

8 www.irf.com
please see an-1035 for directfet assembly details and stencil and substrate design recommendations g = gate d = drain s = source d gs d dd cl downloaded from: http:///

www.irf.com 9 directfet part marking
please see an-1035 for directfet assembly details and stencil and substrate design recommendations "au" = gate and automotive marking part number logo batch number date code line above the last character of the date code indicates "lead-free" code ab cd e f g h j k l m r p n/a 0.029 0.003 0.007 0.041 0.077 0.112 0.036 0.018 0.020 max 0.191 0.156 n/a 0.68 0.02 0.08 0.95 1.85 2.75 0.88 0.35 0.48 min 4.75 3.70 n/a 0.74 0.08 0.17 1.05 1.95 2.85 0.92 0.45 0.52 max 4.85 3.95 n/a 0.027 0.003 0.001 0.073 0.037 0.108 0.035 0.019 0.014 min 0.146 0.187 metric imperial dimensions 0.98 1.02 0.88 0.92 0.036 0.035 0.040 0.039 downloaded from: http:///

10 www.irf.com
tape & reel dimension (showing component orientation). reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as AUIRF7640S2tr). for 1000 parts on 7" reel, order AUIRF7640S2tr1 b c max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 imperial h min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 standard option (qty 4800) code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 metric g e f min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 tr1 option (qty 1000) max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c imperial a d loaded tape feed direction a e note: controlling dimensions in mm code a b c d e f g h f b c imperial min 0.311 0.154 0.469 0.215 0.158 0.197 0.059 0.059 max 8.10 4.10 12.30 5.55 4.20 5.20 n.c 1.60 min 7.90 3.90 11.90 5.45 4.00 5.00 1.50 1.50 metric dimensions max 0.319 0.161 0.484 0.219 0.165 0.205 n.c 0.063 d h g downloaded from: http:///

www.irf.com 11 important notice unless specifically designated for the automotive market, international rectifier corporation and its subsidiaries (ir) reserve the right to make corrections, modifications, enhancements, improvements, and other changes to its products and services at any tim e and to discontinue any product or services without notice. part numbers designated with the au prefix follow automotive indus try and / or customer specific requirements with regards to product discontinuance and process change notification. all products ar e sold subject to irs terms and conditions of sale supplied at the time of order acknowledgment. ir warrants performance of its hardware products to the specifications applicable at the time of sale in accordance with irs s tandard warranty. testing and other quality control techniques are used to the extent ir deems necessary to support this warranty. exc ept where mandated by government requirements, testing of all parameters of each product is not necessarily performed.ir assumes no liability for applications assistance or customer product design. customers are responsible for their products an d applications using ir components. to minimize the risks with customer products and applications, customers should provide ad- equate design and operating safeguards. reproduction of ir information in ir data books or data sheets is permissible only if reproduction is without alteration and is accompanied by all associated warranties, conditions, limitations, and notices. reproduction of this information with alterations is an unfair and deceptive business practice. ir is not responsible or liable for such altered documentation. information of third parties may be subject to additional restrictions. resale of ir products or serviced with statements different from or beyond the parameters stated by ir for that product or serv ice voids all express and any implied warranties for the associated ir product or service and is an unfair and deceptive businesspractice. ir is not responsible or liable for any such statements. ir products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the b ody, or in other applications intended to support or sustain life, or in any other application in which the failure of the ir product could create a situation where personal injury or death may occur. should buyer purchase or use ir products for any such unintended or unauthorized application, buyer shall indemnify and hold international rectifier and its officers, employees, subsidiaries, aff iliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ir was negligent regarding the design or manufacture of the product. ir products are neither designed nor intended for use in military/aerospace applications or environments unless the ir products are specifically designated by ir as military-grade or enhanced plastic. only products designated by ir as military-grade meet m ilitary specifications. buyers acknowledge and agree that any such use of ir products which ir has not designated as military-grade is solely at the buyers risk, and that they are solely responsible for compliance with all legal and regulatory requirements in c onnection with such use. ir products are neither designed nor intended for use in automotive applications or environments unless the specific ir products are designated by ir as compliant with iso/ts 16949 requirements and bear a part number including the designation au. buyers acknowledge and agree that, if they use any non-designated products in automotive applications, ir will not be responsible for any failure to meet such requirements for technical support, please contact irs technical assistance center http://www .irf.com/technical-info/ world headquarters: 233 kansas st., el segundo, california 90245 tel: (310) 252-7105 downloaded from: http:///

▲Up To Search▲

Price & Availability of AUIRF7640S2

	To Download AUIRF7640S2 Datasheet File
If you can't view the Datasheet, Please click here to try to view without PDF Reader .