2014. 1. 09 1/3 semiconductor technical data FMMT312 revision no : 0 150v/400a 2-pack mosfet module (half - bridge) h low r ds(on) h high frequency operation h dv/dt ruggedness h fast switching application h motor control h electric vehicle, automotive etc. internal circuit outline drawing unit : mm 22 0.3 90 0.3 9 0.3 17 0.3 17 0.3 28 0.2 28 0.2 5 0.3 24 0.2 54 0.3 62 0.3 72 0.3 24 0.2 5 0.5 9 0.5 15 0.5 9 0.3 4 0.3 2 0.2 2 0.2 72 0.3 80 0.3 m6 x 3 m4 x 4 2 5-1 5-2 5-3 5-4 5-5 5-6 4.2 6.4 ?? 2 ?? 2 ?? 2 1 2 3 maximum rating (@ta=25 ? per leg) characteristic symbol rating unit drain-to source breakdown voltage v dss 150 v gate threshold voltage v th ? 15 v continuous drain current @t c =25 ? i c 450 a @t c =100 ? 300 isolation voltage ac @ 1 minute v iso 2500 v junction temperature t j -40 ~ 150 ? storage temperature t stg -40 ~ 125 ? weight of module weight 98 ? 5 g terminal connection torque(m4) m 6 n.m 1 2 3 s-6 s-2 ntc s-3 s-5 s-4 s-1 outline drawing unit : mm
2014. 1. 09 2/3 FMMT312 revision no : 0 electrical characteristics (@ta=25 ? per leg, unless otherwise noted) characteristic symbol test condition min. typ. max. unit static drain-source breakdown voltage bv dss i d =250 u , v gs =0v 150 - - v breakdown voltage temperature coefficient bv dss / t j i d =5ma, referenced to 25 ? - 0.17 - v/ ? gate threshold voltage v th v ds =v gs , i d =250 u 3.0 - 5.0 v drain to source leakage current i dss v ds =150v, v gs =0v - - 20 a v ds =150v, v gs =0v, t j =125 ? - - 250 gate to source leakage current i gss v gs =15v, with protection circuit - - 10 ma v gs =-15v, with protection circuit - - -10 ma drain to source on resistance r ds(on) v gs =10v, i d =400a - 2.0 3.0 m ? dynamic forward transconductance gfs v ds =50v, i d =400a - tbd - s total gate charge q g i d =400a, v ds =75v, v gs =10v - tbd - nc gate to source charge q gs - tbd - gate to source charge q gd - tbd - turn on delay time t d(on) - tbd - ns rise time t r - tbd - turn off delay tine t d(off) - tbd - fall time t r - tbd - input capacitance c iss - tbd - output capacitance c oss - tbd - reverse transfer capacitance c rss - tbd - pf source-drain diode ratings continuous source current i s - - 450 a pulsed source current i sp - - 2500 diode forward voltage v sd i d =400a, v gs =0v - - 1.3 v reverse recovery time t rr - tbd - ns reverse recovery charge q rr - tbd - nc
2014. 1. 09 3/3 FMMT312 revision no : 0 v ds [v] v ds [v] i d [a] 200 100 10,000 1,000 100 10 1 0 0 300 400 0 0.1 1 10 100 1,000 0.5 1 1.5 2 2.5 fig 2. saturation voltage characteristics fig 5. safe operation area 6 r ds(on) [ ? ] 4 2 0 8 10 0 50 75 100 125 150 fig 4.r ds(on) characteristics i d = 400a operation in this area limited by r ds(on) 100us 1ms 10ms tc = 25 ? tj = 125 ? single pulse dc common source v gs = 10v common source v gs = 10v i f [a] i d [a] 200 v f [v] v ds [v] 100 0 300 400 0 0.5 1 1.5 2 fig 3. forward characteristics of inverse diode tc = 125 ? tc = 25 ? tc = 25 ? tc = 125 ? v ds [v] i d [a] fig 1. saturation voltage characteristics 200 100 0 300 400 0 0.5 1 1.5 2 common source tc = 25 ? v gs = 15v v gs = 10v
|
