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  SFE1A ... sfe1m SFE1A ... sfe1m superfast switching surface mount silicon rectifier diodes superschnelle silizium-gleichrichterdioden fr die oberfl?chenmontage version 2015-01-23 dimensions - ma?e [mm] nominal current C nennstrom 1 a repetitive peak reverse voltage periodische spitzensperrspannung 50...1000 v plastic case melf kunststoffgeh?use melf do-213ab weight approx. C gewicht ca. 0.07 g plastic material has ul classification 94v-0 geh?usematerial ul94v-0 klassifiziert standard packaging taped and reeled standard lieferform gegurtet auf rolle maximum ratings grenzwerte type typ repetitive peak reverse voltage periodische spitzensperrspannung v rrm [v] surge peak reverse voltage sto?spitzensperrspannung v rsm [v] SFE1A 50 50 sfe1b 100 100 sfe1d 200 200 sfe1g 400 400 sfe1j 600 600 sfe1k 800 800 sfe1m 1000 1000 max. average forward rectified current, r-load dauergrenzstrom in einwegschaltung mit r-last t t = 100c i fav 1 a repetitive peak forward current periodischer spitzenstrom f > 15 hz i frm 10 a 1 ) peak forward surge current, 50 hz half sine-wave sto?strom fr eine 50 hz sinus-halbwelle t a = 25c i fsm 30 a rating for fusing, t < 10 ms grenzlastintegral, t < 10 ms t a = 25c i 2 t 4.5 a 2 s junction temperature C sperrschichttemperatur storage temperature C lagerungstemperatur t j t s -50...+150c -50...+150c 1 max. temperature of the terminals t t = 100c C max. temperatur der anschlsse t t = 100c ? diotec semiconductor ag http://www.diotec.com/ 1 t y p e t y p 0 . 5 5 . 0 0 . 3 2 . 5 0 . 1 0 . 2 _ + 0 . 4 _ 0 . 5 0 . 4 _
SFE1A ... sfe1m characteristics kennwerte type typ reverse recovery time sperrverzugszeit t rr [ns] 1 ) forward voltage durchlass-spannung v f [v] at / bei i f [a] SFE1A...sfe1d < 50 < 1.0 1 sfe1g < 50 < 1.25 1 sfe1j...sfe1m < 75 < 1.7 1 leakage current sperrstrom t j = 25c v r = v rrm i r < 5 a thermal resistance junction to ambient air w?rme widerstand sperrschicht C umgebende luft r tha < 45 k/w 2 ) thermal resistance junction to terminal w?rme widerstand sperrschicht C anschluss r tht < 10 k/w 1 i f = 0.5 a through/ber i r = 1 a to/auf i r = 0.25 a 2 mounted on p.c. board with 25 mm 2 copper pads at each terminal montage auf leiterplatte mit 25 mm 2 kupferbelag (l?tpad) an jedem anschluss 2 http://www.diotec.com/ ? diotec semiconductor ag rated forward current vs. temp. of the terminals in abh. v. d. temp. der terminals zul. richtstrom 120 100 80 60 40 20 0 i fav [%] [c] t t 150 100 50 0 [a] i f forward characteristics (typical values) durchlasskennlinien (typische werte) [v] v f 10 1 0.1 10 10 -2 -3 SFE1A...d sfe1g sfe1j...m t = 25c j


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