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Datasheet File OCR Text: |
inchange semiconductor product specification silicon pnp power transistors 2SB867 description ? with to-220 package ? low collector saturation voltage ? complement to type 2sd959 ?excellent linearity of h fe applications ? for power switching applications pinning pin description 1 emitter 2 collector;connected to mounting base 3 base absolute maximum ratings (ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter -130 v v ceo collector-emitter voltage open base -80 v v ebo emitter-base voltage open collector -7 v i c collector current (dc) -3 a i cm collector current -peak -6 a p c collector power dissipation t c =25 ?? 30 w t j junction temperature 150 ?? t stg storage temperature -55~150 ??
inchange semiconductor product specification 2 silicon pnp power transistors 2SB867 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =-10ma ;i e =0 -80 v v cesat collector-emitter saturation voltage i c =-2a; i b =-0.1a -0.5 v v besat base-emitter saturation voltage i c =-2a; i b =-0.1a -1.5 v i cbo collector cut-off current v cb =-100v;i e =0 -10 | a i ebo emitter cut-off current v eb =-5v; i c =0 -50 | a h fe-1 dc current gain i c =-0.1a ; v ce =-2v 45 h fe-2 dc current gain i c =-0.5a ; v ce =-2v 60 260 f t transition frequency i c =-0.5a ; v ce =-10v 30 mhz switching times t on turn-on time 0.3 | s t s storage time 1.1 | s t f fall time i c =-0.5a i b1 =-i b2 =-50ma 0.3 | s ? h fe-2 classifications r q p 60-120 90-180 130-260 inchange semiconductor product specification 3 silicon pnp power transistors 2SB867 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.10 mm) inchange semiconductor product specification 4 silicon pnp power transistors 2SB867 inchange semiconductor product specification 5 silicon pnp power transistors 2SB867 |
Price & Availability of 2SB867 |
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