1 C5D50065D silicon carbide schottky diode z -r ec ? r ectifier features ? 650-volt schottky rectifer ? zero reverse recovery current ? zero forward recovery voltage ? high-frequency operation ? temperature-independent switching behavior ? extremely fast switching ? positive temperature coeffcient on v f benefts ? replace bipolar with unipolar rectifers ? essentially no switching losses ? higher effciency ? reduction of heat sink requirements ? parallel devices without thermal runaway applications ? solar inverters ? motor drives ? ev chargers ? ups ? automotive package to-247-3 maximum ratings (t c = 25?c unless otherwise specifed) symbol parameter value unit test conditions note v rrm repetitive peak reverse voltage 650 v v rsm surge peak reverse voltage 650 v v dc dc peak blocking voltage 650 v i f c o n t i n u o u s fo r w a r d c u r r e n t 100 50 46 a t c =25?c t c =130?c t c =135?c i frm repetitive peak forward surge current 153 106 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i fsm non-repetitive forward surge current 400 330 a t c =25?c, t p =10 ms, half sine pulse t c =110?c, t p =10 ms, half sine pulse i f,max non-repetitive peak forward current 2000 1600 a t c =25?c, t p =10 m s, pulse t c =110?c, t p =10 m s, pulse p tot power dissipation 300 130 w t c =25?c t c =110?c t j , t stg operating junction and storage temperature -55 to +175 ?c to-247 mounting torque 1 8.8 nm lbf-in m3 screw 6-32 screw part number package marking C5D50065D to-247-3 c5d50065 v rrm = 650 v i f ( t c =130?c) = 50 a q c = 110 nc C5D50065D rev. -
2 electrical characteristics symbol parameter typ. max. unit test conditions note v f forward voltage 1.5 1.25 1.8 v i f = 50 a t j =25c i f = 25 a t j =25c i f = 50 a t j =175c i f = 25 a t j =175c 1.8 1.3 2.2 i r reverse current 50 4 500 a v r = 650 v , t j =25c v r = 400 v , t j =25c v r = 650 v , t j =175c v r = 400 v , t j =175c 200 6 1000 q c total capacitive charge 110 nc v r = 400 v, i f = 50 a d i /d t = 500 a/s t j = 25c c total capacitance 1970 200 180 pf v r = 0 v, t j = 25c, f = 1 mhz v r = 200 v, t j = 25?c, f = 1 mhz v r = 400 v, t j = 25?c, f = 1 mhz note: 1. this is a majority carrier diode, so there is no reverse recovery charge. thermal characteristics symbol parameter typ. unit r jc thermal resistance from junction to case 0.5 c/w typical performance figure 1. forward characteristics figure 2. reverse characteristics 50 75 100 foward current, i f (a) t j = 75 c t j = 175 c t j = 125 c 0 25 0 0.5 1 1.5 2 2.5 3 3.5 4 foward current, i foward voltage, v f (v) t j = -55 c t j = 25 c i f forward current (a) v f forward voltage (v) v r 5uvrodj i r 5uvrodjp 0.15 0.20 0.25 0.30 0.35 0.40 0.45 reverse leakage current, i rr (ma) t j = 175 c t j = 125 c t j = 75 c 0.00 0.05 0.10 0.15 0 100 200 300 400 500 600 700 reverse leakage current, i reverse voltage, v r (v) t j = 25 c t j = -55 c C5D50065D rev. -
3 100 125 150 175 200 225 250 275 300 325 power dissipation (w) 0 25 50 75 100 25 50 75 100 125 150 175 power dissipation (w) t c case temperature (c) 150 200 250 300 350 0 50 100 150 25 50 75 100 125 150 175 figure 4. power derating figure 3. current derating 10% duty 20% duty 30% duty 50% duty 70% duty dc 325 300 275 250 225 200 175 150 125 100 75 50 25 0 25 50 75 100 125 150 175 typical performance i f (a) t c (c) p tot (w) t c (c) 350 300 250 200 150 100 50 0 25 50 75 100 125 150 175 40 60 80 100 120 capacitive charge, q c (nc) conditions: t j = 25 c 0 20 40 0 50 100 150 200 250 300 350 400 capacitive charge, q reverse voltage, v r (v) figure 5. recovery charge vs. reverse voltage q rr (nc) v r (v) 120 100 80 60 40 20 0 0 50 100 150 200 250 300 350 400 conditions: t j =25 c figure 6. power derating 800 1000 1200 1400 1600 1800 2000 capacitance (pf) conditions: t j = 25 c f test = 1 mhz v test = 25 mv 0 200 400 600 0.1 1 10 100 1000 capacitance (pf) reverse voltage, v r (v) figure 6. typical capacitance vs. reverse voltage c (pf) v r (v) 2000 1800 1600 1400 1200 1000 800 600 400 200 0 conditions: t j =25 c f test =1 mhz v test =25mv 0.1 1 10 100 1000 C5D50065D rev. -
4 typical performance 10e-3 100e-3 1 junction to case impedance, z thjc ( o c/w) 0.5 0.3 0.1 0.05 0.02 0.01 singlepulse 100e-6 1e-3 1e-6 10e-6 100e-6 1e-3 10e-3 100e-3 1 junction to case impedance, z time, t p (s) figure 8. transient thermal impedance thermal resistance (c/w) t (sec) 1000 10000 ifsm(a) 10 100 1.e-05 1.e-04 1.e-03 1.e-02 tp(s) 10000 1000 100 0 figure 7. non-repetitive peak forward surge current versus pulse duration (sinusoidal waveform) t p (s) i fsm (a) t j = 25c t j = 110c 1e-05 1e-04 1e-03 1e-02 C5D50065D rev. -
5 part number package marking C5D50065D to-247-3 c5d50065 recommended solder pad layout package dimensions package to-247-3 pos inches millimeters min max min max a .605 .635 15.367 16.130 b .800 .831 20.320 21.10 c .780 .800 19.810 20.320 d .095 .133 2.413 3.380 e .046 .052 1.168 1.321 f .060 .095 1.524 2.410 g .215 typ 5.460 typ h .175 .205 4.450 5.210 j .075 .085 1.910 2.160 k 6? 21? 6? 21? l 4? 6? 4? 6? m 2? 4? 2? 4? n 2? 4? 2? 4? p .090 .100 2.286 2.540 q .020 .030 .508 .762 r 9? 11? 9? 11? s 9? 11? 9? 11? t 2? 8? 2? 8? u 2? 8? 2? 8? v .137 .144 3.487 3.658 w .210 .248 5.334 6.300 x .502 .557 12.751 14.150 y .637 .695 16.180 17.653 z .038 .052 0.964 1.321 aa .110 .140 2.794 3.556 bb .030 .046 0.766 1.168 cc .161 .176 4.100 4.472 w x y z aa bb cc to-247-3 note: recommended soldering profles can be found in the applications note here: http://www.cree.com/power_app_notes/soldering C5D50065D rev. -
6 6 diode model v t r t diode model csd10060 vf t = v t + if*r t v t= 0.92 + (t j * - 1.35*10 - 3 ) r t= 0.052 + (t j * 0.29*10 - 3 ) note: t j = diode junction temperature in degrees celsius, valid from 25c to 175c vf t = v t +if*r t v t = 0.9947+(t j * -0.0013) r t = 0.0093+(t j * 7.00*10 -5 ) C5D50065D rev. - copyright ? 2014 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree, the cree logo, and zero recovery are registered trademarks of cree, inc. cree, inc. 4600 silicon drive durham, nc 27703 usa tel: +1.919.313.5300 fax: +1.919.313.5451 www.cree.com/power ? rohs compliance the levels of rohs restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with eu directive 2011/65/ec (rohs2), as implemented january 2, 2013. rohs declarations for this product can be obtained from your cree representative or from the product documentation sections of www.cree.com. ? reach compliance reach substances of high concern (svhcs) information is available for this product. since the european chemi - cal agency (echa) has published notice of their intent to frequently revise the svhc listing for the foreseeable future,please contact a cree representative to insure you get the most up-to-date reach svhc declaration. reach banned substance information (reach article 67) is also available upon request. ? this product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defbrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, or air traffc control systems. notes
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