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to our customers, old company name in catalogs and other documents on april 1 st , 2010, nec electronics corporation merged with renesas technology corporation, and renesas electronics corporation took over all the business of both companies. therefore, although the old company name remains in this document, it is a valid renesas electronics document. we appreciate your understanding. renesas electronics website: http://www.renesas.com april 1 st , 2010 renesas electronics corporation issued by: renesas electronics corporation (http://www.renesas.com) send any inquiries to http://www.renesas.com/inquiry.
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without the prior written consent of renesas electronics. further, you may not use any renesas electronics product for any application for which it is not intended without the prior written consent of renesas electronics. re nesas electronics shall not be in any way liable for any damages or losses incurred by you or third partie s arising from the use of any renesas electronics product for a n application categorized as ?specific? or for which the product is not intende d where you have failed to obtain the prior writte n consent of renesas electronics. the quality grade of each renesas electronics product is ?standard? unless otherwise expressly specified in a renesas electr onics data sheets or data books, etc. ?standard?: computers; office equipmen t; communications e quipment; test and measurement equipment; audio and visual equipment; home electronic a ppliances; machine tools; personal electronic equipmen t; and industrial robots. ?high quality?: transportation equi pment (automobiles, trains, ships, etc.); traffic control systems; anti-disaster systems; an ti- crime systems; safety equipment; and medical equipment not specif ically designed for life support. ?specific?: aircraft; aerospace equipment; submersible repeaters; nuclear reactor control systems; medical equipment or systems for life support (e.g. artificial life support device s or systems), surgical im plantations, or healthcare intervention (e.g. excision, etc.), and any other applicati ons or purposes that pose a di rect threat to human life. 8. you should use the renesas electronics pr oducts described in this document within the range specified by renesas electronics , especially with respect to the maximum ra ting, operating supply voltage range, movement power volta ge range, heat radiation characteristics, installation and other product characteristics. renesas electronics shall have no liability for malfunctions o r damages arising out of the use of renesas electronics products beyond such specified ranges. 9. although renesas electronics endeavors to improve the quality and reliability of its produc ts, semiconductor products have specific characteristics such as the occurrence of failure at a certain rate a nd malfunctions under certain use conditions. fur ther, renesas electronics products are not subject to radiation resistance design. please be sure to implement safety measures to guard them against the possibility of physic al injury, and injury or damage caused by fire in the event of the failure of a renesas electronics product, such as safe ty design for hardware and software in cluding but not limited to redundancy, fire control and malfunction prevention, appropri ate treatment for aging degradation or an y other appropriate measures. because the evaluation of microcomputer software alone is very difficult , please evaluate the safety of the final products or system manufactured by you. 10. please contact a renesa s electronics sales office for details as to environmental matters such as the environmental compatibility of each renesas electronics product. please use renesas electronics products in compliance with all applicable laws and regulations that regul ate the inclusion or use of c ontrolled substances, including wi thout limitation, the eu rohs directive. renesas electronics assumes no liability for damage s or losses occurring as a result of your noncompliance with applicable laws and regulations. 11. this document may not be reproduced or duplicated, in any form, in w hole or in part, without prio r written consent of renes as electronics. 12. please contact a renesa s electronics sales office if you have any questi ons regarding the informat ion contained in this document or renesas electroni cs products, or if you have any other inquiries. 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? 1997 data sheet mos integrated circuit m pd16803 document no. s11452ej2v0ds00 (2nd edition) date published july 1997 n printed in japan monolithic dual h bridge driver circuit description the m pd16803 is a monolithic dual h bridge driver circuit which uses n-channel power mos fets in its driver stage. by employing the power mos fets for the output stage, this driver circuit has a substantially improved saturation voltage and power consumption as compared with conventional driver circuits that use bipolar transistors. in addition, the drive current can be adjusted by an external resistor in a power-saving mode. the m pd16803 is therefore ideal as the driver circuit of the 2-phase excitation, bipolar-driven stepping motor for the head actuator of an fdd. features ? low on resistance (sum of on resistors of top and bottom transistors) r on1 = 1.5 w typ. (v m = 5.0 v) r on2 = 2.0 w typ. (v m = 12.0 v) ? low current consumption: i dd = 0.4 ma typ. ? stop mode function that turns off all output transistors ? compact surface mount package: 20-pin plastic sop (300 mil) pin configuration (top view) 1 3 4 5 6 7 8 9 10 c1h c2l 1a 2a pgnd v m1 v dd inc in 1 in 2 c1l c2h 1b 2b pgnd v g v m2 dgnd r x ps 2 20 18 17 16 15 14 13 12 11 19
m pd16803 2 ordering information part number package m pd16803gs 20-pin plastic sop (300 mil) block diagram osc circuit band gap reference charge pump level control circuit switch circuit control circuit level shift h bridge 2 h bridge 1 0.01 f m 0.01 f m 0.01 f m v dd r x v g 2 v dd + v m v m1 v m v m2 1a 1b 2a 2b pgnd pgnd c1l c2l c1h c2h connected in diffusion layer note 3 note 2 ps in 1 in 2 inc 50 k w 50 k w 50 k w 50 k w dgnd note 1 notes 1. 3 v dd where v m v dd 2. the power-saving mode is set when the ps pin goes high. in this mode, the voltage of the charge pump circuit is lowered and the on resistance of the h bridge driver transistor increases, limiting the current. in the power-saving mode, the motor cannot turn. 3. it is recommended to connect an external capacitor of 0.22 m f or more between v m and gnd to stabilize the operation.
m pd16803 3 function table excitation direction inc in 1 in 2 h 1 h 2 <1> h h h f f <2> h l h r f <3> h l l r r <4> h h l f r el stop f: forward r: reverse for the excitation waveform timing chart, refer to application example . h 2 r h 1 r h 2 f h 1 f <4> <1> <2> <3> forward off v m on on off ab reverse off v m on on off ab stop off v m off off off ab
m pd16803 4 absolute maximum ratings (t a = 25 c) parameter symbol rating unit supply voltage (motor block) v m e0.5 to +15 v supply voltage (control block) v dd e0.5 to +7 v power consumption p d1 1.0 note 1 w p d2 1.25 note 2 instantaneous h bridge driver current i d (pulse) 1.0 note 2, 3 a input voltage v in e0.5 to v dd + 0.5 v operating temperature range t a 0 to 60 c operation junction temperature t jmax . 150 c storage temperature range t stg e55 to +125 c notes 1. ic only 2. when mounted on a printed circuit board (100 100 1 mm, glass epoxy) 3. t 5 ms, duty 40 % 1.4 1.0 1.2 0.8 0.6 0.4 0.2 0 20 40 60 80 100 p d e t a characteristics average power consumption p d (w) when mounted on printed circuid boad ic only ambient temperature t a (?c)
m pd16803 5 recommended operating conditions parameter symbol min. typ. max. unit supply voltage (motor block) v m 4.0 5.0 13.2 v supply voltage (control block) v dd 4.0 5.0 6.0 v r x pin connection resistance r x 2k w h bridge driver current note i dr 380 ma charge pump capacitance c 1 to c 3 520nf operating temperature t a 060 c note when mounted on a printed circuit board (100 100 1 mm, glass epoxy) electrical specifications (within recommended operating conditions unless otherwise specified) parameter symbol conditions min. typ. max. unit off v m pin current i m inc pin low note 1 v m = 6.0 v 1.0 m a v dd = 6.0 v v m = 13.2 v 1.0 ma v dd = 6.0 v v dd pin current i dd note 2 0.4 1.0 ma in 1 , in 2 , inc pin high-level i ih1 t a = 25 c, v in = v dd 1.0 m a input current 0 t a 60 c, v in = v dd 2.0 in 1 , in 2 , inc pin low-level input i il1 t a = 25 c, v in = 0 v e0.15 ma current 0 t a 60 c, v in = 0 v e0.2 ps pin high-level input current i ih2 t a = 25 c, v in = v dd 0.15 ma 0 t a 60 c, v in = v dd 0.2 ps pin low-level input current i il2 t a = 25 c, v in = 0 v e1.0 m a 0 t a 60 c, v in = 0 v e2.0 in 1 , in 2 , inc pin input pull-up r inu t a = 25 c 355065k w resistance 0 t a 60 c2575 ps pin input pull-down resistance r ind t a = 25 c 355065k w 0 t a 60 c2575 control pin high-level input voltage v ih 3.0 v dd + 0.3 v control pin low-level input voltage v il e0.3 0.8 v h bridge circuit on r on1 v dd = 5 v, v m = 5 v 1.5 3.0 w resistance note 3 r on2 v dd = 5 v, v m = 12 v 2.0 4.0 r on relative accuracy d r on excitation direction <2>, <4> note 4 5% excitation direction <1>, <3> 10 v x voltage in power-saving mode note 5 v x v dd = v m = 5 v, r x = 50 k w 2.5 v v x relative accuracy in d v x excitation direction <2>, <4> note 4 5% power-saving mode excitation direction <1>, <3> 5 charge pump circuit (v g ) turn on time t ong v dd = 5 v, v m = 5 v 0.3 2 ms h bridge circuit turn on time t onh c 1 = c 2 = c 3 = 10 nf 5 m s h bridge circuit turn off time t offh r m = 20 w 5 m s notes 1. when v dd < v m , a current (i m1 ) always flow from the v m1 pin to the charge pump circuit because a gate voltage (2 v dd + v m ) is generated. 2. when in 1 = in 2 = inc = h, ps = l 3. sum of on resistances of top and bottom transistors 4. for the excitation direction, refer to function table . 5. v x is a voltage at point a (forward) or b (reverse) of the h bridge in function table.
m pd16803 6 characteristic curves r on vs. v dd (= v m ) characteristics r on vs. v m characteristics r m = 20 w 3 2 1 0 0 10 11 12 13 14 1 2 3 4 5 6 7 8 4.0 5.0 6.0 h bridge on resistance r on ( w ) h bridge on resistance r on ( w ) v x voltage in power-saving mode v x (v) v x voltage in power-saving mode v x (v) h bridge on resistance r on ( w ) supply voltage v dd (= v m ) (v) supply voltage v dd (= v m ) (v) operation junction temperature t j (?c) r x pin connection resistance r x (k w ) r m = 60 w v dd = 4.5 v v dd = 5.0 v v dd = 5.5 v motor voltage v m (v) r on vs. t j characteristics v x vs. v dd (= v m ) characteristics v x vs. r x characteristics 3 2 1 0 25 50 75 100 125 150 v dd = v m = 5.0 v r m = 20 w r x = 50 k w r m = 20 w v dd = v m = 5 v r m = 20 w v x : note 5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 20 40 60 80 100 120 140 160 3.0 2.5 2.0 4.0 5.0 6.0
m pd16803 7 application circuit example 1. connection with 1-chip fdd lsi m pc2100agf pc2100agf m osc circuit band gap reference charge pump level control circuit switch circuit control circuit level shift h bridge 2 h bridge 1 0.01 f 0.22 f m m 0.01 f m 0.01 f m v dd r x v g 2 v dd + v m v m1 v m v m2 1a 1b 2a 2b pgnd pgnd c1l c2l c1h c2h connected in diffusion layer ps in 1 in 2 inc 50 k w 50 k w 50 k w 50 k w dgnd spf0 ph11 ph21 ph11 ph21 stb0 step input direction internal circumference seek external circumference seek pc2100agf stepping motor excitation timing chart m
m pd16803 8 2. connection with 1-chip fdd lsi m pc2100agf osc circuit band gap reference charge pump level control circuit switch circuit control circuit level shift h bridge 2 h bridge 1 0.01 f 0.22 f m m 0.01 f m 0.01 f m v dd r x v g 2 v dd + v m v m1 v m v m2 1a 1b 2a 2b pgnd pgnd c1l c2l c1h c2h connected in diffusion layer ps in 1 in 2 inc 50 k w 50 k w 50 k w 50 k w dgnd spf0 ph11 ph21 pc2100agf m the application circuits and their parameters are for reference only and are not intended for use in actual design-ins.
m pd16803 9 20 pin plastic sop (300 mil) item millimeters inches a b c e f g h i j 13.00 max. 1.27 (t.p.) 1.8 max. 1.55 7.70.3 0.78 max. 0.12 1.1 5.6 m 0.10.1 n 0.512 max. 0.031 max. 0.0040.004 0.071 max. 0.061 0.3030.012 0.220 0.043 0.005 0.050 (t.p.) p20gm-50-300b, c-4 p 3 3 +7 note each lead centerline is located within 0.12 mm (0.005 inch) of its true position (t.p.) at maximum material condition. d 0.40 0.016 +0.10 e0.05 k 0.20 0.008 +0.10 e0.05 l 0.60.2 0.024 0.10 e3 +7 e3 0.004 +0.008 e0.009 +0.004 e0.002 +0.004 e0.003 a c d g p detail of lead end f e b h i l k m j n m 1 10 11 20
m pd16803 10 recommended soldering conditions it is recommended to solder this product under the conditions described below. for soldering methods and conditions other than those listed below, consult nec. surface mount type for the details of the recommended soldering conditions of this type, refer to semiconductor device mounting technology manual (c10535e) . soldering method soldering conditions symbol of recommended soldering infrared reflow peak package temperature: 230 c, time: 30 seconds max. (210 c min.), ir30-00 number of times: 1, number of days: none note vps peak package temperature: 215 c, time: 40 seconds max. (200 c min.), vp15-00 number of times: 1, number of days: none note wave soldering solder bath temperature: 260 c max., time: 10 seconds max., ws60-00 number of times: 1, number of days: none note partial heating pin temperature: 300 c max., time: 10 seconds max., e number of days: none note note the number of storage days at 25 c, 65 % rh after the dry pack has been opened caution do not use two or more soldering methods in combination (except partial heating).
m pd16803 11 [memo]
2 m pd16803 no part of this document may be copied or reproduced in any form or by any means without the prior written consent of nec corporation. nec corporation assumes no responsibility for any errors which may appear in this document. nec corporation does not assume any liability for infringement of patents, copyrights or other intellectual property rights of third parties by or arising from use of a device described herein or any other liability arising from use of such device. no license, either express, implied or otherwise, is granted under any patents, copyrights or other intellectual property rights of nec corporation or others. while nec corporation has been making continuous effort to enhance the reliability of its semiconductor devices, the possibility of defects cannot be eliminated entirely. to minimize risks of damage or injury to persons or property arising from a defect in an nec semiconductor device, customers must incorporate sufficient safety measures in its design, such as redundancy, fire-containment, and anti-failure features. nec devices are classified into the following three quality grades: "standard", "special", and "specific". the specific quality grade applies only to devices developed based on a customer designated "quality assurance program" for a specific application. the recommended applications of a device depend on its quality grade, as indicated below. customers must check the quality grade of each device before using it in a particular application. standard: computers, office equipment, communications equipment, test and measurement equipment, audio and visual equipment, home electronic appliances, machine tools, personal electronic equipment and industrial robots special: transportation equipment (automobiles, trains, ships, etc.), traffic control systems, anti-disaster systems, anti-crime systems, safety equipment and medical equipment (not specifically designed for life support) specific: aircrafts, aerospace equipment, submersible repeaters, nuclear reactor control systems, life support systems or medical equipment for life support, etc. the quality grade of nec devices is "standard" unless otherwise specified in nec's data sheets or data books. if customers intend to use nec devices for applications other than those specified for standard quality grade, they should contact an nec sales representative in advance. anti-radioactive design is not implemented in this product. m4 96.5 [memo]

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