? semiconductor components industries, llc, 2012 october, 2012 ? rev. p1 1 publication order number: NDF60N550U1/d NDF60N550U1, ndd60n550u1 product preview n-channel power mosfet 600 v, 550 m features ? 100% avalanche tested ? these devices are pb-free, halogen free/bfr free and are rohs compliant absolute maximum ratings (t j = 25 c unless otherwise noted) parameter symbol ndf ndd unit drain ? to ? source voltage v dss 600 v gate ? to ? source voltage v gs 25 v continuous drain current r jc (note 1) steady state t c = 25 c i d 9.5 8.5 a t c = 100 c 6 5.4 power dissipation ? r jc steady state t c = 25 c p d 28 96 w pulsed drain current t p = 10 s i dm 38 34 a operating junction and storage temperature t j , t stg ? 55 to +150 c source current (body diode) i s 9.5 8.5 a single pulse drain ? to ? source avalanche energy eas tbd mj lead temperature for soldering leads t l 260 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. limited by maximum junction temperature thermal resistance parameter symbol value unit junction ? to ? case (drain) NDF60N550U1 ndd60n550u1 r jc 4.4 1.3 c/w junction ? to ? ambient steady state NDF60N550U1 ndd60n550u1 ndd60n550u1 ? 1 r ja 50 33 96 c/w this document contains information on a product under development. on semiconductor reserves the right to change or discontinue this product without notice. http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 3 of this data sheet. marking and ordering information v (br)dss r ds(on) max 600 v 550 m @ 10 v dpak case 369aa to ? 220fp case 221ah 1 2 3 4 1 2 3 4 n ? channel mosfet d (2) s (3) g (1) ipak case 369d 1 2 3
NDF60N550U1, ndd60n550u1 http://onsemi.com 2 electrical characteristics (t j = 25 c unless otherwise noted) characteristic symbol test conditions min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs =0v, i d =1ma 600 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j tbd mv/ c drain ? to ? source leakage current i dss v ds = 600 v, v gs =0v t j =25 c 1 a t j = 125 c 50 gate ? to ? source leakage current i gss v gs = 20 v 100 na on characteristics (note 2) gate threshold voltage v gs(th) v ds =v gs , i d =50 a 2 tbd 4 v negative threshold temperature coefficient v gs(th) /t j reference to 25 c, i d = 50 a tbd mv/ c static drain-to-source on resistance r ds(on) v gs =10v, i d = 4.8 a 530 550 m forward transconductance g fs v ds =15v, i d = 4.8 a tbd s dynamic characteristics input capacitance c iss v ds =50v, v gs = 0 v, f = 1 mhz 540 pf output capacitance c oss 45 reverse transfer capacitance c rss 1 total gate charge q g v ds = 300 v, i d = 9.5 a, v gs =10v 20 nc gate-to-source charge q gs tbd gate-to-drain charge q gd tbd plateau voltage v gp tbd v gate resistance r g tbd resistive switching characteristics (note 3) turn-on delay time t d(on) v dd = 300 v, i d = 9.5 a, v gs =10v, r g = 0 tbd ns rise time t r tbd turn-off delay time t d(off) tbd fall time t f tbd source ? drain diode characteristics diode forward voltage v sd i s = 9.5 a, v gs =0v t j =25 c tbd 1.6 v t j = 100 c tbd reverse recovery time t rr v gs =0v, v dd =30v i s = 9.5 a, d i /d t = 100 a/ s tbd ns charge time t a tbd discharge time t b tbd reverse recovery charge q rr tbd nc 2. pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NDF60N550U1, ndd60n550u1 http://onsemi.com 3 marking diagrams to ? 220fp ipak dpak a = assembly location y = year ww = work week g = pb ? free package xxxxxxxxg ayww gate source drain 1 gate 2 drain 3 source 4 drain yww xx xxxg 4 drain 2 drain 1 gate 3 source yww xx xxxg ordering information device package shipping ? NDF60N550U1g to ? 220fp (pb-free, halogen-free) 50 units / rail ndd60n550u1 ? 1g ipak (pb-free, halogen-free) 75 units / rail ndd60n550u1t4g dpak (pb-free, halogen-free) 2500 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NDF60N550U1, ndd60n550u1 http://onsemi.com 4 package dimensions to ? 220 fullpack, 3 ? lead case 221ah issue c dim min max millimeters d 14.70 15.30 e 9.70 10.30 a 4.30 4.70 b 0.54 0.84 p 3.00 3.40 e l1 --- 2.80 c 0.49 0.79 l 12.70 14.73 b2 1.10 1.40 q 2.80 3.20 a2 2.50 2.70 a1 2.50 2.90 h1 6.70 7.10 e q l1 b2 e d l p 123 b seating plane a a1 h1 a2 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. contour uncontrolled in this area. 4. dimensions d and e do not include mold flash and gate protrusions. mold flash and gate protrusions not to exceed 0.13 per side. these dimensions are to be measured at outermost extreme of the plastic body. 5. dimension b2 does not include dambar protrusion. lead width including protrusion shall not exceed 2.00. 2.54 bsc m 0.14 m a a b c e/2 m 0.25 m a b 3x c 3x b note 3
NDF60N550U1, ndd60n550u1 http://onsemi.com 5 package dimensions 123 4 v s a k ? t ? seating plane r b f g d 3 pl m 0.13 (0.005) t c e j h dim min max min max millimeters inches a 0.235 0.245 5.97 6.35 b 0.250 0.265 6.35 6.73 c 0.086 0.094 2.19 2.38 d 0.027 0.035 0.69 0.88 e 0.018 0.023 0.46 0.58 f 0.037 0.045 0.94 1.14 g 0.090 bsc 2.29 bsc h 0.034 0.040 0.87 1.01 j 0.018 0.023 0.46 0.58 k 0.350 0.380 8.89 9.65 r 0.180 0.215 4.45 5.45 s 0.025 0.040 0.63 1.01 v 0.035 0.050 0.89 1.27 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. z z 0.155 ??? 3.93 ??? ipak case 369d ? 01 issue c style 2: pin 1. gate 2. drain 3. source 4. drain
NDF60N550U1, ndd60n550u1 http://onsemi.com 6 package dimensions dpak (single guage) case 369aa ? 01 issue b b d e b3 l3 l4 b2 e m 0.005 (0.13) c c2 a c c z dim min max min max millimeters inches d 0.235 0.245 5.97 6.22 e 0.250 0.265 6.35 6.73 a 0.086 0.094 2.18 2.38 b 0.025 0.035 0.63 0.89 c2 0.018 0.024 0.46 0.61 b2 0.030 0.045 0.76 1.14 c 0.018 0.024 0.46 0.61 e 0.090 bsc 2.29 bsc b3 0.180 0.215 4.57 5.46 l4 ??? 0.040 ??? 1.01 l 0.055 0.070 1.40 1.78 l3 0.035 0.050 0.89 1.27 z 0.155 ??? 3.93 ??? notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inches. 3. thermal pad contour optional within di- mensions b3, l3 and z. 4. dimensions d and e do not include mold flash, protrusions, or burrs. mold flash, protrusions, or gate burrs shall not exceed 0.006 inches per side. 5. dimensions d and e are determined at the outermost extremes of the plastic body. 6. datums a and b are determined at datum plane h. 12 3 4 5.80 0.228 2.58 0.102 1.60 0.063 6.20 0.244 3.00 0.118 6.17 0.243 mm inches scale 3:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* h 0.370 0.410 9.40 10.41 a1 0.000 0.005 0.00 0.13 l1 0.108 ref 2.74 ref l2 0.020 bsc 0.51 bsc a1 h detail a seating plane a b c l1 l h l2 gauge plane detail a rotated 90 cw style 2: pin 1. gate 2. drain 3. source 4. drain on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 NDF60N550U1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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