unisonic technologies co., ltd 7n10 power mosfet www.unisonic.com.tw 1 of 7 copyright ? 2015 unisonic technologies co., ltd qw-r502-394.j 7 a , 100v n-channel power mosfet ? description the utc 7n10 is an n-channel enhancement mode power mosfet, providing customers with excellent switching performance and minimum on-state resistance. the utc 7n10 uses planar stripe and dmos technology to provide perfect quality. this device can also withstand high energy pulse in the avalanche and the commutation mode. the utc 7n10 is generally applied in low voltage applications, such as dc motor controls, audio amplifiers and high efficiency switching dc/dc converters. ? features * r ds(on) < 0.35 ? @ v gs =10v, i d =3.5a * fast switching * improved dv/dt capability ? symbol to-252 1 to-251 sot-223 1 1 to-252d 1 ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 - 7n10g-aa3-r sot-223 g d s tape reel 7n10l-tm3-t 7N10G-TM3-T to-251 g d s tube 7n10l-tn3-r 7n10g-tn3-r to-252 g d s tape reel 7n10l-tnd-r 7n10g-tnd-r to-252d g d s tape reel note: pin assignment: g: gate d: drain s: source
7n10 power mosfet unisonic technologies co., ltd 2 of 7 www.unisonic.com.tw qw-r502-394.j ? marking sot-223 to-251 / to-252 / to-252d
7n10 power mosfet unisonic technologies co., ltd 3 of 7 www.unisonic.com.tw qw-r502-394.j ? absolute maximum ratings (t a =25c, unless otherwise specified) parameter symbol ratings unit drain -source voltage v dss 100 v gate-source voltage v gss 25 v continuous drain current t c =25c i d 7 a t c = 70c i d 6.8 a pulsed drain current (note 2) i dm 16 a avalanche current (note 2) i ar 7 a repetitive avalanche energy (note 2) e ar 0.2 mj single pulsed avalanche energy (note 3) e as 50 mj peak diode recovery dv/dt (note 4) dv/dt 6.0 v/ns power dissipation sot-223 p d 2.0 w to-251/to-252 to-252d 2.5 derate above 25c sot-223 0.016 w/c to-251/to-252 to-252d 0.02 operating junction temperature t j -55 ~ +150 c storage temperature t stg -55 ~ +150 c notes: 1. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. 2. repetitive rating : pulse width limit ed by maximum junction temperature 3. l =26mh, i as =1.7a, v dd =25v, r g =25 ? starting t j =25c 4. i sd 7.3a, di/dt 300a/ s, v dd bv dss , starting t j =25c ? thermal data parameter symbol ratings unit junction to ambient sot-223 ja 62.5 c/w to-251/to-252 to-252d 50 junction to case sot-223 jc 12 c/w to-251/to-252 to-252d 7.5 note: when mounted on the minimum pad size recommended (pcb mount)
7n10 power mosfet unisonic technologies co., ltd 4 of 7 www.unisonic.com.tw qw-r502-394.j ? electrical characteristics (t c =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 100 v breakdown voltage temperature coefficient ? bv dss / ? t j reference to 25c, i d =250a 0.1 v/c drain-source leakage current i dss v ds =100v, v gs =0v 1 a v ds =80v, t c =125c 10 a gate-source leakage current i gss v gs =25v, v ds =0v 100 na on characteristics gate threshold voltage v gs ( th ) v ds = v gs , i d =250a 2.0 4.0 v static drain-source on-resistance r ds ( on ) v gs =10v, i d =3.5a 0.144 0.35 ? forward transconductance g fs v ds =40v, i d =0.85a (note 1) 1.85 s dynamic parameters input capacitance c iss v ds =25v, v gs =0v, f=1.0mhz 380 450 pf output capacitance c oss 70 85 pf reverse transfer capacitance c rss 11 15 pf switching parameters total gate charge q g v gs =10v, v ds =50v, i d =1.3a (note 1,2) 14.3 nc gate source charge q gs 4.2 nc gate drain charge q gd 3.2 nc turn-on delay time t d ( on ) v dd =30v, i d =0.5a, r g =25 ? (note 1,2) 30 38 ns turn-on rise time t r 40 50 ns turn-off delay time t d ( off ) 80 90 ns turn-off fall-time t f 35 40 ns source- drain diode ratings and characteristics maximum continuous drain-source diode forward current i s 7 a maximum pulsed drain-source diode forward current i sm 16 a drain-source diode forward voltage v sd i s =7a, v gs =0v 1.5 v reverse recovery time t r r v gs =0v, i s =7.3a, di f /dt=100a/s 70 ns reverse recovery charge q rr 150 nc notes: 1. pulse test: pulse width 300 s, duty cycle 2% 2. essentially independent of operating temperature
7n10 power mosfet unisonic technologies co., ltd 5 of 7 www.unisonic.com.tw qw-r502-394.j ? test circuits and waveforms v ds + - dut r g dv/dt controlled by r g i sd controlled by pulse period v dd peak diode recovery dv/d t test circuit & waveforms same type as dut i sd v gs l v gs (driver) i sd (dut) v ds (dut) d= gate pulse width gate pulse period 10v di/dt body diode reverse current i rm body diode recovery dv/dt v dd v sd body diode forward voltage drop i fm , body diode forward current driver
7n10 power mosfet unisonic technologies co., ltd 6 of 7 www.unisonic.com.tw qw-r502-394.j ? test circuits and waveforms (cont.) 50k ? 300nf dut v ds 10v 12v charge q gs q gd q g v gs v gs 200nf same type as dut 3ma gate charge test circuit gate charge waveforms resistive switching test circuit resistive switching waveforms 10v t p r g dut l v ds i d v dd t p v dd i as bv dss i d (t) v ds (t) time e as = 2 1 li as 2 bv dss bv dss -v dd unclamped inductive switching test circuit unclamped inductive switching waveforms
7n10 power mosfet unisonic technologies co., ltd 7 of 7 www.unisonic.com.tw qw-r502-394.j ? typical characteristics drain current, i d (a) drain current, i d (a) drain-source on-state resistance characteristics drain current, i d (a) drain to source voltage, v ds (v) 0 1.5 2.5 4 0 0.2 0.4 0.6 0.5 2 3.5 0.8 1 3 v gs =10v, i d =3.5a 7n10 soa chart (to-252, t c =25c) 1 0.1 10 10 100 1 0.1 drain to source voltage, v ds (v) drain current, i d (a) 100ms 10ms 1ms 100us dc,1s utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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