inchange semiconductor isc rf product specification isc website www.iscsemi.cn 1 isc silicon npn rf transistor 2SC5064 description low noise and high gain nf = 1.1 db typ., s 21e 2 = 12 db typ. @v ce = 5 v, f = 1.0 ghz applications designed for vhf~uhf band low no ise amplifier applications. absolute maximum ratings(t a =25 ) symbol parameter value unit v cbo collector-base voltage 20 v v ceo collector-emitter voltage 12 v v ebo emitter-base voltage 3.0 v i c collector current-continuous 30 ma i b base current-continuous 15 ma p c collector power dissipation @t c =25 0.15 w t j junction temperature 125 t stg storage temperature range -55~125
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 2 isc silicon npn rf transistor 2SC5064 electrical characteristics t c =25 unless otherwise specified symbol parameter conditions min typ. max unit i cbo collector cutoff current v cb = 10v; i e = 0 1.0 a i ebo emitter cutoff current v eb = 1v; i c = 0 1.0 a h fe dc current gain i c = 10ma ; v ce = 5v 80 240 f t current-gain?bandwidth product i c = 10ma ; v ce = 5v 5 7 ghz c re feed-back capacitance i e = 0 ; v cb = 5v; f= 1.0mhz 0.45 0.9 pf c ob output capacitance i e = 0 ; v cb = 5v; f= 1.0mhz 0.7 pf s 21e 2 insertion power gain i c = 10ma ; v ce = 5v;f= 500mhz 17 db s 21e 2 insertion power gain i c = 10ma ; v ce = 5v;f= 1.0ghz 8.5 12 db nf noise figure i c = 3ma ; v ce = 5v;f= 500mhz 1 db nf noise figure i c = 3ma ; v ce = 5v;f= 1.0ghz 1.1 2.0 db ? h fe classification o y 80-160 120-240
inchange semiconductor isc rf product specification 3 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5064
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 4 isc silicon npn rf transistor 2SC5064 s-parameter v ce = 5 v, i c = 5 ma, z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. ang. mag. ang. mag. ang. 200 0.753 -43.7 10.247 140. 6 0.040 65.6 0.827 -22.6 400 0.531 -75.1 7.684 117. 2 0.060 57.1 0.648 -30.3 600 0.384 -96.4 5.815 103. 0 0.074 56.1 0.551 -32.0 800 0.305 -112.6 4.532 93. 6 0.086 57.0 0.500 -32.3 1000 0.255 -126.3 3.788 86. 3 0,099 58.9 0.472 -32.4 1200 0.224 -138.4 3.244 80. 7 0,112 60.2 0.455 -32.2 1400 0.203 -150.1 2.833 75. 4 0.127 60.3 0.442 -32.6 1600 0.187 -159.4 2.529 70. 6 0,139 60.0 0.434 -33.0 1800 0.174 -166.5 2.283 66. 7 0,150 60.3 0.429 -32.6 2000 0.176 -171.2 2.107 63. 0 0,164 59.2 0.428 -32.2
inchange semiconductor isc rf product specification 5 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5064 v ce = 5 v, i c = 10 ma, z o = 50 freque . s 11 s 21 s 12 s 22 mhz mag. ang. mag. ang. mag. ang. mag. ang. 200 0.591 -58.0 14.955 129. 6 0.034 64.3 0.714 -27.5 400 0.367 -90.3 9.581 107. 5 0.052 61.9 0.534 -30.8 600 0.260 -110.7 6.781 96. 1 0.067 63.9 0.462 -30.1 800 0.209 -126.9 5.207 88. 6 0.083 65.2 0.428 -29.2 1000 0.178 -141.8 4.269 82. 5 0.100 66.4 0.412 -28.6 1200 0.160 -153.7 3.618 77. 7 0.117 66.7 0.403 -28.3 1400 0.150 -166.3 3.152 72. 7 0.135 65.4 0.398 -28.8 1600 0.141 -175.2 2.801 68. 7 0.149 64.0 0.393 -29.4 1800 0.130 178.2 2.521 65.0 0.163 63.4 0.392 -29.0 2000 0.133 174.0 2.314 61.7 0.179 61.3 0.395 -28.6
inchange semiconductor isc rf product specification isc website www.iscsemi.cn 6 isc silicon npn rf transistor 2SC5064
inchange semiconductor isc rf product specification 7 isc website www.iscsemi.cn isc silicon npn rf transistor 2SC5064
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