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tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 1 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? applications ? military radar ? communications product features functional block diagram ? frequency range: 32.0 C ? power: 3 5.5 dbm psat ? pae: 22% ? gain: 1 9 db ? return loss: 1 2 db ? bias: vd = 6 v, id = 2.1 a, vg = - 0.60 v typical ? dimensions: 5.31 x 8.92 x 0. 49 mm general description bond pad configuration triquints tga2575 fabricated on triquints pin # symbol 1 rf in 2, 6 vg 3, 5 vd 4 rf out ordering information part no. eccn description tga2575 - ts 3a001.b.2.d ka - band power amplifier 1 6 TGA2575-TS 5 4 c5 100 pf c3 1000 pf c1 1000 pf c6 100 pf c4 1000 pf c2 1000 pf 2 3
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 2 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications absolute maximum ratings parameter rating drain voltage,v d + 6.5 v gate voltage,v g - 5 to 0 v drain to gate voltage, vd - vg 10 drain current, i d 3. 8 a gate current, i g - 14 to 4 .8 ma power dissipation , pdiss 21 w rf input power, cw, 50,t = 25oc o c mounting temperature (30 seconds) 320 o c storage temperature - 40 to 15 0 o c operation of this device outside the parameter ranges given above may cause permanent damage. these are stress ratings only, and functional operation of the device at these conditions is not implied. recommended operating conditions parameter min typ ical max units v d 6 v i d 2.1 a i d _d rive (under rf drive) 3.3 a v g - 0.60 v electrical specifications are measured at specified test conditions. specifications are not guaranteed over all recommended operating conditions. electrical specifications test conditions unless otherwise noted: 25oc, vd = 6 v, id = 2.1 a, vg = - 0.60 v typical. parameter min typical max units operational frequency range 3 2 38 ghz gain: 32 C C C C
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 3 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? specifications (cont.) thermal and reliability information parameter condition rating thermal resistance, jc , measured to back of package tbase = 70 c jc = 6.2 c/w channel temperature (tch), and median lifetime (tm) tbase = 70 c, vd = 6 v, id = 2.1 a, pdiss = 12.6 w tch = 1 48 c tm = 1.3 e+ 6 hours channel temperature (tch), and median lifetime (tm) under rf drive tbase = 70 c, vd = 6 v, id = 3.3 a, pout = 36 dbm, pdiss = 15.8 w tch = 1 68 c tm = 1.5 e+ 5 hours 1 . 0 e+ 04 1.0e+05 1.0e+06 1 . 0 e+ 07 1 . 0 e+ 08 1.0e+09 1.0e+10 1 . 0 e+ 11 1 . 0 e+ 12 1.0e+13 1.0e+14 1 . 0 e+ 15 25 50 75 100 125 150 175 200 median lifetime, tm (hours) channel temperature, tch ( c) median lifetime (tm) vs. channel temperature (tch) fet 5
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 4 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 2 4 6 8 10 12 14 16 18 20 22 25 30 35 40 45 return loss (db) gain (db) frequency (ghz) s - parameters vs. freq. vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c gain irl orl - 25 - 20 - 15 - 10 - 5 0 5 10 15 20 25 12 13 14 15 16 17 18 19 20 21 22 30 31 32 33 34 35 36 37 38 39 40 return loss (db) gain (db) frequency (ghz) s - parameters vs. freq. vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c gain irl orl 22 24 26 28 30 32 34 36 38 6 8 10 12 14 16 18 20 22 24 output power (dbm) input power (dbm) output power vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz 10 12 14 16 18 20 22 6 8 10 12 14 16 18 20 22 24 power gain (db) input power (dbm) power gain vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 9 11 13 15 17 19 21 23 25 drain current (a) input power (dbm) drain current vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz 0 5 10 15 20 25 30 6 8 10 12 14 16 18 20 22 24 % power added efficiency input power (dbm) pae vs. input power vs. freq. vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c 30ghz 31ghz 32ghz 33ghz 34ghz 35ghz 36ghz 37ghz 38ghz
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 5 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? typical performance (cont.) 28 29 30 31 32 33 34 35 36 37 38 30 32 34 36 38 output power (dbm) frequency (ghz) output power vs. freq. vs. input power vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c pin=+23dbm pin=+22dbm pin=+21dbm pin=+20dbm pin=+19dbm pin=+18dbm pin=+17dbm pin=+16dbm pin=+15dbm 0 5 10 15 20 25 30 35 30 32 34 36 38 % power added efficiency frequency (ghz) pae vs. freq. vs. input power vd = 6 v, id = 2.1 a, vg = - 0.60 v typical, +25 c pin=+23dbm pin=+22dbm pin=+21dbm pin=+20dbm pin=+19dbm pin=+18dbm pin=+17dbm pin=+16dbm pin=+15dbm
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 6 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? application circuit vg must be biased from both sides (pins 2 and 6) vd must be biased from both sides (pins 3 and 5) bias - up procedure bias - down procedure vg set to - 1.5 v turn off rf supply vd set to +6 v reduce vg to - 1.5v. ensure id ~ 0 ma adjust vg more positive until quiescent id is 2.1 a. this will be ~ vg = - 0.60 v turn vd to 0 v apply rf signal to rf input turn vg to 0 v 1/ additional bypass capacitors may be required at this location. the presence and value of these capacitors varies by application. variables include power supply impedance, power supply stability with reactive loads, and the inductance from th e power supp ly to this assembly. 1 to 47 uf tantalum capacitors are commonly used here . rf in 1 6 TGA2575-TS 5 rf out 4 c5 100 pf vg 1/ c3 1000 pf c1 1000 pf c6 100 pf c4 1000 pf c2 1000 pf c7 0.01 uf 2/ c8 0.01 uf 2/ vd 1/ 2 3
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 7 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? bond pad description tga2575 mmic bond pad symbol description 1 rf in input, matched to 50 ohms . 2, 6 vg gate voltage . bias network is required; must be biased from each pad; se e application circuit on page 8 as an example. 3, 5 vd drain voltage . bias network is required; must be biased from each pad; se e application circuit on page 8 as an example. 4 rf out output, matched to 50 ohms . gnd backside of die. 1 2 3 4 5 6 tga2575_eg7644
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 8 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? a s sembly drawing use one 3 mil g old ribbon or two 1 mil gold wires for rf bonds ; keep ribbon straight or wires as minimum as possible use 1 mil g old wire for wire bonding to capacitors tfn in (50 ? line, see mechanical details on page 10), c1 to c6 are included in tga2575 - ts * must be removed for pulse operation bill of material ref des value description manufacturer part number c1 , c2, c3,c4 100 0 pf cap , 100 v, 20 %, single layer cap included in tga2575 - ts c5, c6 100 p f cap, 10 0 v, 1 0%, single layer cap included in tga2575 - ts c7, c8 0.01 uf cap, 100 v, 10%, smd various * vd = 6 v id = 2.1 a vg rf out rf in vd vg vd vg = -0.6 v typical c7 c1 c3 c2 c4 c5 c6 c8 *
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 9 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information tga2575 mmic unit: millimeters thickness: 0.05 die x, y size tolerance: +/ - 0.050 chip edge to bond pad dimensions are shown to center of pad ground is backside of die bond pad symbol pad size 1 rf in 0.126 x 0.202 2, 6 vg 0.10 1 x 0.10 1 3, 5 vd 0. 126 x 0. 302 4 rf out 0.1 26 x 0. 202 2.784 0.097 0 4.022 0.109 3.627 0.516 0 2.603 0.109 5.307 5.404 5.295 4.132 3.629 0.523 tga2575_eg7644 1 2 3 4 5 6
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 10 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? mechanical information tga2575 - ts (mmic on thermal spreader ) u nit: millimeters tolerance: +/ - 0.125 material for thermal spreader : cu13/mo74/cu13 . thickness: 0. 254 0.025 plating for thermal spreader : electrolytic gold (au) 2.5 - 5.72 m per astm b 488, type iii, grade a over electrolytic nickel (ni) 2.5 - 7.5 m per qq - n - 290, class 1. material for tfn : white alumina (ai203) 99.6% pure; dielectric constant 9.7 size: .039 x .026 x .005 inches plating for tfn: top and bottom pat tern titanium - tungsten (tiw): 0.04 C 0. 08 um sputtered or plated gold (au): 4 um min mmic is attached to thermal s preader using 80/20 ausn solder. tfn and capacitors are at tached to thermal spreader can be use epoxy 8.915 5.309 .178 x 4 .13 .025 .051 .486 .254 .122
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 11 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? product compliance information esd information esd rating: tbd value: tbd test: human body model (hbm) standard: jedec standard jesd22 - a114 solderability this part is compliant with eu 2002/95/ec rohs directive (restrictions on the use of certain hazardous substances in electr ical and electronic equipment). this product also has the following attributes: ? lead free ? halogen free (chlorine, bromine) ? antimony free ? tbbp - a (c 15 h 12 br 4 0 2 ) free ? pfos free ? svhc free eccn us department of commerce 3a001.b.2.d assembly notes component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. reflow process assembly notes: ? attachment of the carrier should use solder for optimum thermal management . ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? devices must be stored in a dry nitrogen atmosphere. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007 - inch wi re.
tga 2575 - ts ka - band 3 watt power amplifier data sheet: rev - 12/14 /1 2 - 12 of 12 - disclaimer: subject to change without notice ? 2012 triquint semiconductor, inc. connecting the digital world to the global network ? contact information for the latest specifications, additional product information, worldwide sales and distribution locations, and information ab out triquint: web: www.triquint.com tel: +1. 972.994.8465 email: info - sales@tqs.com fax: +1.972.994.8504 for technical questions and application information: email: info - products@tqs.com important notice the information contained herein is believed to be reliable . triquint makes no warranties regarding the information contain ed herein . triquint assumes no responsibility or liability whatsoever for any of the information contained her ein. triquint assumes no responsibility or liability whatsoever for the use of the information contained herein. the information contained herein is provided "as is, where is" and with all faults, and the entire risk associated with such information is entirely wi th the user. a ll information contained herein is subject to change without notice. customers should obtain and verify the latest relevant information before placing orders for triquint products. the information contained herein or any use of such information does not grant, explicitly or implicitly, to any party any patent rights, licenses, or any other intellectual property rights, whether with regard to such information itself or anything described by such information. triquint products are not warranted or authori zed for use as critical components in medical, life - saving, or life - sustaining applications, or other applications where a failure would reasonably be expected to cause severe personal injury or death.

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