elektronische bauelemente ssd20p15-295d -10.7a, -150v, r ds(on) 295m ? p-ch enhancement mode power mosfet 10-sep-2013 rev.a page 1 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. a c d n o p g e f h k j m b to - 252(d - pack) rohs compliant product a suffix of -c specifies halogen free description these miniature surface mount mosfets utilize high cell density process.low r ds(on) assures minimal power loss and conserves energy, making thisdevice ideal for u se in power management circuitry. typical applications ar e pwmdc-dc converters, power management in portable and battery-powered products such as computers, pri nters, battery charger, telecommunication power system, an d telephones power system. features low r ds(on) provides higher efficiency and extends battery life . miniature to-252 surface mount package saves board space. high power and current handling capability. package information package mpq leader size to-252 2.5k 13 inch absolute maximum ratings (t a = 25 c unless otherwise specified) parameter symbol ratings unit drain-source voltage v ds -150 v gate-source voltage v gs 20 v continuous drain current 1 t c =25 i d -10.7 a pulsed drain current 2 i dm -60 a continuous source current (diode conduction) 1 i s -42.6 a total power dissipation 1 t c =25 p d 50 w operating junction and storage temperature range t j , t stg -55 ~ 175 c thermal resistance ratings maximum thermal resistance junction-ambient 1 r ja 40 c / w maximum thermal resistance junction-case r jc 3 c / w notes 1. surface mounted on 1 x 1 fr4 board. 2. pulse width limited by maximum junction temperat ure. millimeter millimeter ref. min. max. ref. min. max. a 6. 4 6.8 j 2.30 ref. b 5.20 5.50 k 0.70 0.90 c 2.20 2.40 m 0.50 1.1 d 0.45 0.58 n 0.9 1. 6 e 6.8 7.3 o 0 0.15 f 2.40 3.0 p 0.43 0.58 g 5.40 6.2 h 0.8 1.20 1 gate 3 source 2 drain
elektronische bauelemente ssd20p15-295d -10.7a, -150v, r ds(on) 295m ? p-ch enhancement mode power mosfet 10-sep-2013 rev.a page 2 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. electrical characteristics (t a = 25 c unless otherwise specified) parameter symbol min. typ. max. unit teat conditions static gate-threshold voltage v gs(th) -1 - - v v ds = v gs , i d = -250 a gate-body leakage current i gss - - 100 na v ds =0, v gs = 20v - - -1 v ds = -120v, v gs =0 zero gate voltage drain current i dss - - -25 a v ds = -120v, v gs =0, t j =55c on-state drain current 1 i d(on) -10 - - a v ds = -5v, v gs = -10v - - 295 v gs = -10v, i d = -5a drain-source on-resistance 1 r ds(on) - - 580 m v gs = -5.5v, i d = -4a forward transconductance 1 g fs - 22 - s v ds = -15v, i d = -5a diode forward voltage v sd - -1.03 - v i s = -21.3a, v gs =0 dynamic 2 input capacitance c iss - 1080 - output capacitance c oss - 98 - reverse transfer capacitance c rss - 71 - pf v ds = -15v v gs =0 f=1mhz total gate charge q g - 6 - gate-source charge q gs - 2.4 - gate-drain charge q gd - 2.8 - nc i d = -5a v ds = -75v v gs = -4.5v turn-on delay time t d(on) - 8 - rise time t r - 18 - turn-off delay time t d(off) - 54 - fall time t f - 77 - ns v ds = -75v i d = -5a v gen = -10v r l =15 r g =6 notes: 1. pulse test pw Q 300 s duty cycle Q 2%. 2. guaranteed by design, not subject to production testing.
elektronische bauelemente ssd20p15-295d -10.7a, -150v, r ds(on) 295m ? p-ch enhancement mode power mosfet 10-sep-2013 rev.a page 3 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente ssd20p15-295d -10.7a, -150v, r ds(on) 295m ? p-ch enhancement mode power mosfet 10-sep-2013 rev.a page 4 of 4 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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