DMG3407SSN document number: ds35135 rev. 5 - 2 1 of 6 www.diodes.com april 2012 ? diodes incorporated DMG3407SSN advance information p-channel enhancem ent mode mosfet product summary v (br)dss r ds(on) i d t a = 25c -30v 50m ? @ v gs = -10v -4.0a 72m ? @ v gs = -4.5v -3.3a description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? load switch ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? lead-free finish; rohs compliant (note 1) ? halogen and antimony free. ?green? device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sc59 ? case material ? molded plasti c. ul flammability rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish - matte tin solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.014 grams (approximate) ordering information (note 3) part number case packaging DMG3407SSN-7 sc59 3000 / tape & reel notes: 1. eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. no purposely added lead. halogen and antimony free 2. diodes inc.?s ?green? policy can be f ound on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com. marking information date code key year 2010 2011 2012 2013 2014 2015 2016 code x y z a b c d month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sc59 top view pin configuration source gate drain internal schematic d g s g32 = product type marking code ym = date code marking y = year (ex: x = 2010) m = month (ex: 9 = september) g32 ym
DMG3407SSN document number: ds35135 rev. 5 - 2 2 of 6 www.diodes.com april 2012 ? diodes incorporated DMG3407SSN advance information maximum ratings @t a = 25c unless otherwise specified characteristic symbol value units drain-source voltage v dss -30 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = -10v steady state t a = 25c t a = 70c i d -4.0 -3.2 a t<10s t a = 25c t a = 70c i d -4.6 -3.6 a continuous drain current (note 5) v gs = -4.5v steady state t a = 25c t a = 70c i d -3.3 -2.6 a t<10s t a = 25c t a = 70c i d -3.9 -3.1 a pulsed drain current (10 s pulse, duty cycle = 1%) i dm -30 a maximum body diode forward current (note 5) i s -2.0 a thermal characteristics @t a = 25c unless otherwise specified characteristic symbol value units total power dissipation (note 4) t a = 25c p d 1.1 w t a = 70c 0.7 thermal resistance, junction to ambient (note 4) steady state r ja 166 c/w t<10s 118 total power dissipation (note 5) t a = 25c p d 1.8 w t a = 70c 1.1 thermal resistance, junction to ambient (note 5) steady state r ja 98 c/w t<10s 71 thermal resistance, junction to case (note 5) r jc 18 operating and storage temperature range t j, t stg -55 to +150 c electrical characteristics @ t a = 25c unless otherwise stated characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss -30 - - v v gs = 0v, i d = -250 a zero gate voltage drain current t j = 25c i dss - - -1 a v ds = -30v, v gs = 0v gate-source leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) -1.0 -1.5 -2.1 v v ds = v gs , i d = -250 a static drain-source on-resistance r ds (on) - 39 50 m v gs = -10v, i d = -4.1a - 56 72 v gs = -4.5v, i d = -3.0a forward transfer admittance |y fs | - 8.2 - s v ds = -5v, i d = -4a diode forward voltage v sd - -0.75 -1.1 v v gs = 0v, i s = -1a dynamic characteristics (note 7) input capacitance c iss 466 582 700 pf v ds = -15v, v gs = 0v, f = 1.0mhz output capacitance c oss 80 114 148 reverse transfer capacitance c rss 47 76 105 gate resistance r g 2 5 8 v ds = 0v, v gs = 0v, f = 1mhz total gate charge q g 10.6 13.3 16 nc v gs = -10v, v ds = -15v, i d = -4a total gate charge q g 5.2 6.5 8.5 v gs = -4.5v, v ds = -15v,i d = -4a gate-source charge q g s 1.3 1.7 2 gate-drain charge q g d 1.1 1.9 2.7 turn-on delay time t d ( on ) - 6.0 - ns v gs = -10v, v ds = -15v, r l = 3.6 ? , r g = 3 ? turn-on rise time t r - 12.9 - turn-off delay time t d ( off ) - 35.4 - turn-off fall time t f - 30.7 - reverse recovery time t r r 6.8 8.5 10.2 ns i f = 4a, di/dt = 100a/ s reverse recovery charge q r r 5.5 7.0 8.5 nc notes: 4. device mounted on fr-4 pcb with minimum recommended pad layout, single sided. the power dissipation p d is based on t<10s r ja 5. device mounted on 1? x 1? fr-4 pcb with high co verage 2 oz. copper, single sided. the power dissipation p d is based on t<10s r ja 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing.
DMG3407SSN document number: ds35135 rev. 5 - 2 3 of 6 www.diodes.com april 2012 ? diodes incorporated DMG3407SSN advance information 0 4 8 12 16 20 -v , drain -source voltage(v) fig. 1 typical output characteristics ds 012 345 -i , d r ai n c u r r e n t (a) d v = -2.0v gs v = -2.5v gs v = -3.5v gs v = -3.0v gs v = -4.0v gs v = -4.5v gs 0 2 4 6 8 10 -v , gate-source voltage (v) gs fig. 2 typical transfer characteristics -i , d r ai n c u r r e n t (a) d t = 150c a t = 125c a t = 85c a t = 25c a t = -55c a v = -5.0v ds 0 0.02 0.04 0.06 0.08 0.12 0.10 r ,d r ain-s o u r c e o n- r esis t an c e( ) ds(on) 02 4 6 810 -i , drain source current fig. 3 typical on-resistance vs. drain current and gate voltage d 02 4 6 810 -i , drain source current (a) fig. 4 typical on-resistance vs. drain current and temperature d r , d r ain-s o u r ce o n- r esistance( ) ds(on) v = -4.5v gs t = -55c a t = 25c a t = 85c a t = 125c a t = 150c a 0.5 0.7 0.9 1.1 1.3 1.5 1.7 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 5 on-resistance variation with temperature r , d r ain-s o u r c e on-resistance (normalized) ds(on) 0 0.02 0.04 0.06 0.08 0.10 0.12 r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j fig. 6 on-resistance variation with temperature v= -10v i= a gs d -10 v=.5v i= a gs d -4 -5
DMG3407SSN document number: ds35135 rev. 5 - 2 4 of 6 www.diodes.com april 2012 ? diodes incorporated DMG3407SSN advance information 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 7 gate threshold variation vs. ambient temperature a -v , g a t e t h r es h o ld v o l t a g e(v) gs(th) 0.2 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 8 diode forward voltage vs. current sd 0 2 4 6 8 10 -i , s o u r c e c u r r en t (a) s 10 100 1,000 -v , drain-source voltage (v) fig. 9 typical junction capacitance ds 0 5 10 15 20 25 30 c , j u n c t i o n c a p a c i t a n c e (p f ) t c oss c rss f = 1mhz c iss 2 6 10 14 18 22 26 30 -v , drain-source voltage(v) fig. 10 typical drain-source leakage current vs. voltage ds -i , leaka g e c u r r en t (na) dss 0.1 1 10 100 1,000 10,000 t =150c a t =125c a t =85c a t = 25c a 04 81216 q , total gate charge (nc) fig. 11 gate-charge characteristics g 0 2 4 6 8 10 -v , g a t e-s o u r c e v o l t a g e (v) gs 0.00001 0.001 0.1 10 1,000 t1, pulse duration time (sec) fig. 12 single pulse maximum power dissipation 0 50 100 150 200 250 300 350 400 p , p eak t r ansien t p o we r (w) (pk) single pulse r = 164c/w ja r = r * r (t) (t) ? ja ja t -t = p * r ja ja(t)
DMG3407SSN document number: ds35135 rev. 5 - 2 5 of 6 www.diodes.com april 2012 ? diodes incorporated DMG3407SSN advance information 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 13 transient thermal resistance 0.001 0.01 0.1 r(t), t r ansien t t h e r mal r esis t an c e 1 r (t) = r(t) * r ? ja ja r = 164c/w duty cycle, d = t1/ t2 ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse package outline dimensions suggested pad layout sc59 dim min max typ a 0.35 0.50 0.38 b 1.50 1.70 1.60 c 2.70 3.00 2.80 d - - 0.95 g - - 1.90 h 2.90 3.10 3.00 j 0.013 0.10 0.05 k 1.00 1.30 1.10 l 0.35 0.55 0.40 m 0.10 0.20 0.15 n 0.70 0.80 0.75 0 8 - all dimensions in mm dimensions value (in mm) z 3.4 x 0.8 y 1.0 c 2.4 e 1.35 a m j l d b c h k g n x e y c z
DMG3407SSN document number: ds35135 rev. 5 - 2 6 of 6 www.diodes.com april 2012 ? diodes incorporated DMG3407SSN advance information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated a nd all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2012, diodes incorporated www.diodes.com
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