SSFD4004 40v n-channel mosfet www.goodark.com page 1 of 7 rev.1.0 main product characteristics features and benefits description absolute max rating symbol parameter max. units i d @ tc = 25c continuous drain current, v gs @ 10v 145 i d @ tc = 100c continuous drain current, v gs @ 10v 100 i dm pulsed drain current 580 a power dissipation 153 w p d @tc = 25c linear derating factor 1.02 w/c v ds drain-source voltage 40 v v gs gate-to-source voltage 20 v e as single pulse avalanche energy @ l=0.1mh 281.3 mj i as avalanche current @ l=0.1mh 75 a t j t stg operating junction and storage temperature range -55 to + 175 c v dss 40v r ds (on) 3.2mohm(typ.) i d 145a to-252 marking and pin assignment schematic diagram ? advanced mosfet process technology ? special designed for pwm, load switching and general purpose applications ? ultra low on-resistance with low gate charge ? fast switching and reverse body recovery ? 175 operating temperature ? lead free product it utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. these features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications.
SSFD4004 40v n-channel mosfet www.goodark.com page 2 of 7 rev.1.0 thermal resistance symbol characteristics typ. max. units r jc junction-to-case 0.98 /w junction-to-ambient (t 10s) 62 /w r ja junction-to-ambient (pcb mounted, steady-state) 40 /w electrical characteristics @t a =25 unless otherwise specified symbol parameter min. typ. max. units conditions v (br)dss drain-to-source breakdown voltage 40 v v gs = 0v, i d = 250a 3.2 4 v gs =10v,i d = 30a r ds(on) static drain-to-source on-resistance 6.17 m t j = 125c 1 3 v ds = v gs , i d = 250a v gs(th) gate threshold voltage 1.11 v t j = 125c 1 v ds = 40v,v gs = 0v i dss drain-to-source leakage current 50 a t j = 125c 100 v gs =20v i gss gate-to-source forward leakage -100 na v gs = -20v q g total gate charge 52.3 q gs gate-to-source charge 20.3 q gd gate-to-drain("miller") charge 23.1 nc i d = 20a, v ds =15v, v gs = 4.5v t d(on) turn-on delay time 15.9 t r rise time 49.0 t d(off) turn-off delay time 61.6 t f fall time 25.6 ns v gs =10v, v ds =15v, r l =0.75, r gen =3 i d =20a c iss input capacitance 6653 c oss output capacitance 632 c rss reverse transfer capacitance 603 pf v gs = 0v v ds = 15v ? =1mhz source-drain ratings and characteristics symbol parameter min. typ. max. units conditions i s continuous source current (body diode) 145 a i sm pulsed source current (body diode) 580 a mosfet symbol showing the integral reverse p-n junction diode. v sd diode forward voltage 0.72 1.2 v i s =2.1a, v gs =0v t rr reverse recovery time 30.8 ns q rr reverse recovery charge 31.1 nc t j = 25c, i f =20a, di/dt = 100a/s
SSFD4004 40v n-channel mosfet www.goodark.com page 3 of 7 rev.1.0 test circuits and waveforms switch waveforms: notes : calculated continuous current based on maximum allowable junction temperature. package limitation current is 75a. repetitive rating; pulse width limited by max. junction temperature. the power dissipation pd is based on max. junction temperature, using junction-to-case thermal resistance. the value of r ja is measured with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environment with ta =25c. these curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =175c.
SSFD4004 40v n-channel mosfet www.goodark.com page 4 of 7 rev.1.0 typical electrical and thermal characteristics figure 2. gate to source cut-off voltage figure 1: typical output characteristics figure 3. drain-to-source breakdown voltage vs. temperature figure 4: normalized on-resistance vs. case temperature
SSFD4004 40v n-channel mosfet www.goodark.com page 5 of 7 rev.1.0 figure 5. maximum drain current vs. case temperature typical electrical and thermal characteristics figure 6.typical capacitance vs. drain-to-source voltage figure7. maximum effective transient thermal impedance, junction-to-case
SSFD4004 40v n-channel mosfet www.goodark.com page 6 of 7 rev.1.0 mechanical data min nom max min nom max a 2.200 2.300 2.380 0.087 0.091 0.094 a1 0.910 1.010 1.110 0.036 0.040 0.044 b 0.710 0.760 0.810 0.028 0.030 0.032 b1 5.130 5.330 5.460 0.202 0.210 0.215 c 0.460 0.510 0.560 0.018 0.020 0.022 d 6.000 6.100 6.200 0.236 0.240 0.244 d1 d2 e 6.500 6.600 6.700 0.256 0.260 0.264 e1 e 2.186 2.286 2.386 0.086 0.090 0.094 h 9.800 10.100 10.400 0.386 0.398 0.409 f 1.400 1.500 1.700 0.055 0.059 0.067 k v2 5.350 (ref) 2.900 (ref) 1.600 (ref) 8 0 (ref) 8 0 (ref) 0.063 (ref) 0.211 (ref) 0.114 (ref) symbol dimension in millimeters dimension in inches 4.83 (ref) 0.190 (ref) dpak package outline dimension
SSFD4004 40v n-channel mosfet www.goodark.com page 7 of 7 rev.1.0 ordering and marking information device marking: SSFD4004 package (available) dpak to-252 operating temperature range c : -55 to 175 oc devices per unit option1 tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 2 5000 7 35000 option2 tapes/inner units/inner inner units/carton box box boxes/carton box box to-252 2500 1 2500 10 25000 package type units/tape package type units/tape reliability test program test item conditions duration sample size high temperature reverse bias(htrb) t j =125 to 175 @ 80% of max v dss /v ces /vr 168 hours 500 hours 1000 hours 3 lots x 77 devices high temperature gate bias(htgb) t j =150 or 175 @ 100% of max v gss 168 hours 500 hours 1000 hours 3 lots x 77 devices
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