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s mhop microelectronics c orp. a features super high dense cell design for low r ds(on) . rugged and reliable. to-220 and to-220f package. n-channel enhancement mode field effect transistor www.samhop.com.tw dec,24,2013 1 details are subject to change without notice. s g d ver 2.1 g d s sdf series to-220f absolute maximum ratings ( t c =25 c unless otherwise noted ) product summary v dss i d r ds(on) ( ) typ 8a 600v 0.89 @ vgs=10v symbol v ds v gs i dm w a p d c 150 -55 to 175 i d units parameter 600 8 23 v v 30 t c =25 c gate-source voltage drain-source voltage thermal characteristics sdp08n60 drain current-continuous -pulsed a a maximum power dissipation operating junction and storage temperature range t j , t stg 62.5 c/w thermal resistance, junction-to-ambient r ja t c =25 c 8 23 30 SDF08N60 t c =100 c a 5.7 5.7 75 w t c =100 c 1 c/w thermal resistance, junction-to-case r jc a e as single pulse avalanche energy c mj 400 g d s sdp series to-220 50 25 62.5 3 sdp08n60 SDF08N60 ordering information ordering code package marking code delivery mode rohs status sdp08n60hz sdp08n60pz to-220 to-220 sdp08n60 08n60 tube tube halogen free pb free SDF08N60hz SDF08N60pz to-220f to-220f SDF08N60 08n60 tube tube halogen free pb free
www.samhop.com.tw dec,24,2013 2 ver 2.1 4 symbol min typ max units bv dss 600 v 1 i gss 100 na v gs(th) 2 v g fs 5.3 s v sd c iss 1080 pf c oss 106 pf c rss 10 pf q g 39 nc 18.4 nc q gs 40 nc q gd 15 t d(on) ns t r 2.9 ns t d(off) 5.5 ns t f ns gate-drain charge v ds =25v,v gs =0v switching characteristics gate-source charge v dd =300v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time v ds =300v,i d =1a,v gs =10v fall time turn-on delay time ohm v gs =10v , i d =4a v ds =20v , i d =4a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =480v , v gs =0v v gs = 30v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics 4 1.11 b f=1.0mhz b v ds =300v,i d =1a, v gs =10v drain-source diode characteristics and maximum ratings v gs =0v,i s =3a 1.4 v 13.4 0.89 0.79 3 notes a.drain current limited by maximum junction temperatrue. b.guaranteed by design, not subject to production testing. c.starting t j =25 c,l=50mh,v dd = 50v.(see figure12) sdp08n60 SDF08N60
tj( c) ver 2.1 www.samhop.com.tw dec,24,2013 3 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.10 1.05 1.00 0.95 0.90 0.85 1.15 125 150 100 75 50 25 0 -25 -50 i d =250ua 6.0 4.8 3.6 1.2 0 0 tj=125 c 25 c -55 c 3.0 2.5 2.0 1.5 1.0 0.5 0.1 v gs =10v 3.0 2.6 2.2 1.8 1.4 1.0 0 0 100 75 25 50 125 150 v gs =10v i d =4a i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) 15 12 9 6 3 0 v gs = 5v v gs = 10v r ds(on) ( ) i d , drain current(a) figure 3. on-resistance vs. drain current and gate voltage r ds(on) , on-resistance normalized tj, junction temperature( c ) figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage tj, junction temperature( c ) bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature figure 6. breakdown voltage variation with temperature 36 9 12 15 0 1.4 8.4 7.0 5.6 4.2 2.8 0 5 10 15 20 25 30 v gs = 7v sdp08n60 SDF08N60 2.4 v gs = 6v
v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) ver 2.1 www.samhop.com.tw dec,24,2013 4 v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) figure 11a. maximum safe operating area for sdp08n60 figure 11b. maximum safe operating area for SDF08N60 r ds(on) ( ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge 3.0 2.5 2.0 1.5 1.0 0.5 0 10 0 i d = 4a 25 c 75 c 125 c 20.0 10.0 1.0 0 0.25 0.50 0.75 1.00 1.25 5.0 25 c 75 c 2400 2000 1600 1200 800 400 0 0102030 40 50 ciss coss crss 10 8 6 4 2 0 v ds =300v i d = 1a 1 0.1 0.01 10 v gs =10v single pulse t c =25 c 0.1 1 10 100 1000 10ms 1ms dc 0 24 6 810 12 14 16 sdp08n60 SDF08N60 246 8 125 c 100 r d s (on) limit 1 0.1 0.01 10 v gs =10v single pulse t c =25 c 0.1 1 10 100 1000 1 0ms 1ms dc 100 r ds (on ) limit 10 0 u s 100us 1 0 u s
t p v (br )dss i as f igure 12a. figure 12b. u nc l am p e d s in d u ct i ve t e t ci r c u i t o fr m w ave s u nc l am p ed in d u ct i ve ver 2.1 www.samhop.com.tw dec,24,2013 5 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 transient thermal impedance s quare wave p ulse duration (msec) r(t),normalized e ffective d=0.5 0.05 0.02 0.2 0.1 0.01 s ingle p uls e r g i as 0.01 t p d.u.t l v ds + - dd 20v v 0.01 0.1 1 2 0.00001 0.0001 0.001 0.01 0.1 1 p dm t 1 t 2 1. r jc (t)=r (t) * 2. =s ee datasheet 3. t jm- t c =p* (t) 4. duty cycle, d=t1/t2 r jc r jc r jc 10 s ingle p uls e 0.02 0.05 0.1 0.2 d=0.5 0.01 square wave pulse duration (msec) figure 13a. normalized thermal transient impedance curve for sdp 08n60 r(t),normalized effective transient thermal impedance figure 13b. normalized thermal transient impedance curve for sdf 08n60 sdp08n60 SDF08N60
ver 2.1 www.samhop.com.tw dec,24,2013 6 sdp08n60 SDF08N60
ver 2.1 www.samhop.com.tw dec,24,2013 7 4.50 2.35 2.15 0.50 0.70 1.15 0.45 15.30 6.67 9.90 9.20 2.54 ref. 2.79 15.60 3.20 4.90 2.75 2.92 0.65 0.90 1.55 0.70 16.30 6.77 10.32 9.40 3.60 16.00 3.40 sdp08n60 SDF08N60 e q1 q l2 l b1x3 l1 bx3 e a1 a3 d1 d a2 e1 a c to-220f symbol millimeters min max a a1 a2 a3 b b1 c d d1 e e1 e l l1 l2 q q1 ? p ? p 9.45 10.05 6.90 7.10 2.90 3.55
to-220 tube ver 2.1 www.samhop.com.tw dec,24,2013 8 sdp08n60 SDF08N60
ver 2.1 www.samhop.com.tw dec,24,2013 9 f tube sdp08n60 SDF08N60
www.samhop.com.tw 10 top marking definition to-220 (halogen free) xxxxxx sdp08n60 product no. samhop logo wafer lot number production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) smc internal code no. (a,b,c...z) 08n60 xxxxx to-220 (pb free) product no. samhop logo production year (2009 = 9, 2010 = a...) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b...) wafer lot number pb free ver 2.1 sdp08n60 SDF08N60 dec,24,2013
www.samhop.com.tw 11 top marking definition to-220f (halogen free) product no. samhop logo wafer lot number production date (1,2 ~ 9, a,b...) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a...) xxxxxx SDF08N60 to-220f (pb free) xxxxx 08n60 product no. samhop logo production year (2009 = 9, 2010 = a...) production month (1,2 ~ 9, a,b,c) production date (1,2 ~ 9, a,b...) wafer lot number pb free smc internal code no. (a,b,c...z) ver 2.1 sdp08n60 SDF08N60 dec,24,2013

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