dm p3008sfg q document number: d s 38141 rev. 1 - 2 1 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information 30v p - channel enhancement mode mosfet p ower di ? product summary b v dss r ds(on) max i d max t a = 25c - 3 0v 17m ? @ v gs = - 10 v - 8.6a 25 m ? @ v gs = - 4 .5v - 7.1a description and applications this mosfet is designed to minimize th e on - state resistance (r ds( on ) ) , yet maintain superior switching performance, making it ideal for high efficiency power management applications. ? backlighting ? power m anagement f unctions ? dc - dc converters features and benefits ? low r ds(on) C ensures on - state losses are minimized ? small form factor thermally efficient package enables higher density end products ? occupies jus t 33% of the board area occupied by so - 8 enabling smaller end product ? totally lead - free & fully rohs c ompliant (note s 1 & 2 ) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability ? ppap capable (note 4) mechanical data ? case: p ower di ? 3333 - 8 ? case material: molded plastic, "green" molding compound. ul flammability classification rating 94v - 0 ? moisture sensitivity: level 1 per j - std - 020 ? terminals: finish ? matte tin an nealed over copper leadfram e. solderable per mil - std - 202, method 208 ? weight: 0.008 grams ( approxi mate) ordering information (note 5 ) part numbe r case packaging dm p 30 08 s fg q - 7 p ower di 3333 - 8 2 , 0 00 /tape & reel dm p 30 08 s fg q - 13 p ower di 3333 - 8 3 , 000 /tape & reel notes: 1. no purposely added lead. fully eu directive 2002/95/ec (rohs) & 2011/65/eu (rohs 2) compliant. 2. see http://www.diodes.com for mo re information about diodes incorporateds definitions of halogen - and antimony - free, "green" and lead - free. 3. halogen - and antimony - free "green products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. a utomotive products are aec - q101 qualified and are ppap capable. automotive, aec - q101 and standard products are electrically and thermally the same, except where specified. for more information, please refer to http://www.diodes.com/quality/product_compliance_definitions/. 5. for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking information bottom view internal sch e m a tic top view s 31 = product type marking code yyww = date code marking yy = last digit of year (ex: 11 = 2011) ww = week code (01 ~ 53) p ower di 3333 - 8 p ower di is a registered trademark of diodes incorporated. s s s g d d d d pin 1 source gate drain s31 y y w w
dm p3008sfg q document number: d s 38141 rev. 1 - 2 2 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information ma ximum ratings ( @ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 3 0 v gate - source voltage v gss 20 v continuous drain current (note 7 ) v gs = - 10 v steady state t a = + 25c t a = + 70c i d - 8.6 - 7.0 a t<10s t a = + 25c t a = + 70c i d - 11.7 - 9.3 a continuous drain current (note 7 ) v gs = - 4.5 v steady state t a = + 25c t a = + 70c i d - 7.1 - 5.6 a t<10s t a = + 25c t a = + 70c i d - 9.6 - 7.6 a pulsed drain curren t ( 10 dm - 80 a maximum continuous body diode f orward current (note 7 ) i s - 3.0 a thermal characteristics characteristic symbol value units total power dissipation (note 6 ) p d 0.9 w thermal resistance, junction to ambient (note 6 ) s teady s tate r ja 140 c/w t<10s 72 c/w total power dissipation (note 7 ) p d 2. 2 w thermal resistance, junction to ambient (note 7 ) s teady s tate r ja 57 c/w t<10s 30 c/w thermal resistance, junction to case (note 7 ) r j c 7.1 c/w operating and storage temperature range t j, t stg - 55 to +150 c notes: 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout. 7 . device mounted on fr - 4 substrate pc board, 2oz copper, with 1inch square copper plate.
dm p3008sfg q document number: d s 38141 rev. 1 - 2 3 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information 0.1 1 10 100 -v , drain-source voltage (v) fig. 1 soa, safe operation area ds 0.01 0.1 1 10 100 - i , d r a i n c u r r e n t ( a ) d r limited ds(on) dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10 s w t = 150c t = 25c single pulse j(max) a 0 10 20 30 40 50 60 70 80 90 100 t1, pulse duration time (sec) fig. 2 single pulse maximum power dissipation 0.001 0.01 0.1 1 10 100 1,000 0.0001 single pulse r = 57 c/w r = r * r t - t = p * r ? ?? ? ja ja(t) (t) ja j a ja(t) ? p , p e a k t r a n s i e n t p o i w e r ( w ) ( p k ) 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1,000 t1, pulse duration times (sec) fig. 3 transient thermal resistance 0.001 0.01 0.1 r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e 1 r (t) = r(t) * r ?? ja ja r = 57c/w duty cycle, d = t1/ t2 ? ja d = 0.7 d = 0.9 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse
dm p3008sfg q document number: d s 38141 rev. 1 - 2 4 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information electrical characteristics ( @ t a = + 25c , unless otherwise specified .) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source b reakdown voltage bv dss - 3 0 ? ? gs = 0v, i d = - 250 a zero gate voltage drain current i dss ? ? ? ? a v ds = - 30 v, v gs = 0v gate - source leakage i gss ? ? ? gs = ? ds = 0v on characteristics (note 8 ) gate threshold voltage v gs(th) - 1.1 - 1.6 - 2.1 v v ds = v gs , i d = - 25 0 a static drain - source on - resistance r ds (on) ? ? ? gs = - 10 v, i d = - 10 a ? gs = - 4 .5v, i d = - 10 a forward transfer admittance |y fs | ? ? ds = - 15 v, i d = - 10 a diode forward voltage v sd ? gs = 0v, i s = - 1a dynami c characteristics (note 9 ) input capacitance c iss ? ? ds = - 15 v, v gs = 0v f = 1.0mhz output capacitance c oss ? ? rss ? ? g ? ? ? ? ? ds = 0 v, v gs = 0v , f = 1.0mhz total gate charge ( v gs = - 10 v ) q g ? ? ? ds = - 15 v, i d = - 10 a total gate charge ( v gs = - 4.5 v ) q g ? ? ? ? gs ? ? gd ? ? d (on) ? ? gs = - 10 v, v d s = - 15v, r g = 6 ? r ? ? d (off) ? ? f ? ? ? ? notes: 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to product testing.
dm p3008sfg q document number: d s 38141 rev. 1 - 2 5 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information 0 0.5 1.0 1.5 2.0 -v , drain -source voltage(v) fig. 4 typical output characteristics ds 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d v = 3.0v gs v = 3.5v gs v = 4.0v gs v = 4.5v gs v = 10v gs v = 2.5v gs 1 2 3 4 -v , gate-source voltage (v) gs fig. 5 typical transfer characteristics 0 5 10 15 20 25 30 - i , d r a i n c u r r e n t ( a ) d t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 0.01 0.02 0.03 0.04 0.05 0 5 10 15 20 25 30 -i , drain source current fig. 6 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.01 0.02 0.03 0.04 0 5 10 15 20 25 30 -i , drain source current (a) fig. 7 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -4.5v gs -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 8 on-resistance variation with temperature 0.5 0.7 0.9 1.1 1.3 1.5 1.7 r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0 0.01 0.02 0.03 0.04 0.05 -50 -25 0 25 50 75 100 125 150 t , junction temperature ( c) j ? fig. 9 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? v = -10v i = a gs d -10 v = 5v i = a gs d -4. -5
dm p3008sfg q document number: d s 38141 rev. 1 - 2 6 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information 0 0.5 1.0 1.5 2.0 2.5 v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) -50 -25 0 25 50 75 100 125 150 t , ambient temperature (c) fig. 10 gate threshold variation vs. ambient temperature a 0 2 4 6 8 10 12 14 16 18 20 0.4 0.6 0.8 1.0 1.2 -v , source-drain voltage (v) fig. 11 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s 0 5 10 15 20 25 30 -v , drain-source voltage (v) fig. 12 typical junction capacitance ds 100 1,000 10,000 c , j u n c t i o n c a p a c i t a n c e ( p f ) t c oss c rss f = 1mhz c iss 0 5 10 15 20 25 30 -v , drain-source voltage(v) fig. 13 typical drain-source leakage current vs. voltage ds 1 10 100 1,000 10,000 - i , l e a k a g e c u r r e n t ( n a ) d s s t = 150c a t = 125c a t = 85c a t = 25c a 0 10 20 30 40 50 60 q , total gate charge (nc) fig. 14 gate-charge characteristics g 0 2 4 6 8 10 - v , g a t e - s o u r c e v o l t a g e ( v ) g s
dm p3008sfg q document number: d s 38141 rev. 1 - 2 7 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information package outline dimensions please see ap02002 at http://www.diodes.com/datasheets/ap02002.pdf for the latest version. p ower di 3333 - 8 p ower di 3333 - 8 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 ? ? ? ? 0.203 b 0.27 0.37 0.32 b2 ? ? ? ? 0.20 d 3.25 3.35 3.30 d2 2.22 2.32 2.27 e 3.25 3.35 3.30 e2 1.56 1.66 1.61 e ? ? ? ? 0.65 e1 0.79 0.89 0.84 l 0.35 0.45 0.40 l1 ? ? ? ? 0.39 z ? ? ? ? 0.515 all dimensions in mm suggested pad layout please see ap02001 at http://www.diodes .com/datasheets/ap02001.pdf for the latest version. p ower di 3333 - 8 dimensions value (in mm) c 0.650 x 0.420 x1 0.420 x2 0.230 x3 2.370 y 0.700 y1 1.850 y2 2.250 y3 3.700 e1 1 8 d d2 e e b e2 a a3 pin #1 id seating plane l(4x) a1 l1(3x) b2(4x) z(4x) x3 y3 x y c y1 y2 x1 x2 1 8
dm p3008sfg q document number: d s 38141 rev. 1 - 2 8 of 8 www.diodes.com october 2015 ? diodes incorporated d mp3008sfg q advance information important notice diodes incorporated makes no warrant y of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporat ed and its subsidiaries reserve the right to make modifications, enhancements, improvements, corrections or other changes without further notice to this document and any product described herein. diodes incorporated does not assume any liability a rising ou t of the application or use of this document or any product described herein; neither does diodes incorporated convey any license unde r its patent or trademark rights, nor the rights of others. any customer or user of this document or products described h erein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diod es incorporated website, harmless against all damages. diodes incorporated does not warr ant or accept any liability whatsoever in respect of any products purchased through unauthorized sales channel. should customers purchase or use diodes incorporated prod ucts for any unintended or unauthorized application, customers shall indemnify and hold diodes incorporated and its representatives harmless against all claims, damages, expenses, and attorney fees arising ou t of, directly or indirectly, any claim of perso nal injury or death associated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical components in life support devices or system s without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when properly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifications of their life support d evices or systems, and acknowledge and agree that they are solely r esponsible for all legal, regulatory and safety - related requirements concerning their products and any use of diodes incorporated products in such safety - critical, life support devices or systems, notwithstanding any devices - or systems - related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such safety - critical, life support d evices or systems. copyright ? 201 5 , diodes incorporated www.diodes.com
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