? semiconductor components industries, llc, 2011 march, 2011 ? rev. 0 1 publication order number: nsm6056m/d NSM6056MT1G npn transistor with zener diode features ? these devices are pb ? free, halogen free/bfr free and are rohs compliant typical applications ? driving circuit ? switching applications maximum ratings ? npn transistor rating symbol value unit collector ? emitter voltage v ceo 40 v collector ? base voltage v cbo 60 v emitter ? base voltage v ebo 6.0 v collector current ? continuous i c 600 ma collector current ? peak i cm 900 ma maximum ratings ? zener diode rating symbol value unit forward voltage @ i f = 10 ma v f 0.9 v thermal characteristics rating symbol max unit total device dissipation fr ? 5 board, (note 1) @ t a = 25 c p d 380 mw thermal resistance from junction ? to ? ambient r ja 328 c/w junction and storage temperature range t j , t stg ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 4 minimum pad. http://onsemi.com device package shipping ? ordering information sc ? 74 case 318f 1 2 4 npn transistor with zener diode 3 5 6 ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specification brochure, brd8011/d. marking diagram NSM6056MT1G sc ? 74 (pb ? free) 3000/tape & reel m60m m60 = device code m = date code* = pb ? free package (note: microdot may be in either location) *date code orientation may vary depending upon manufacturing location. 1 23 654 z1 q1
NSM6056MT1G http://onsemi.com 2 npn transistor ? electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = 1.0 madc, i b = 0) v (br)ceo 40 ? vdc collector ? base breakdown voltage (i c = 0.1 madc, i e = 0) v (br)cbo 60 ? vdc emitter ? base breakdown voltage (i e = 0.1 madc, i c = 0) v (br)ebo 6.0 ? vdc base cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i bev ? 0.1 adc collector cutoff current (v ce = 35 vdc, v eb = 0.4 vdc) i cex ? 0.1 adc on characteristics (note 3) dc current gain (i c = 0.1 madc, v ce = 1.0 vdc) (i c = 1.0 madc, v ce = 1.0 vdc) (i c = 10 madc, v ce = 1.0 vdc) (i c = 150 madc, v ce = 1.0 vdc) (i c = 500 madc, v ce = 2.0 vdc) h fe 20 40 80 100 40 ? ? ? 300 ? ? collector ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v ce(sat) ? ? 0.4 0.75 vdc base ? emitter saturation voltage (i c = 150 madc, i b = 15 madc) (i c = 500 madc, i b = 50 madc) v be(sat) 0.75 ? 0.95 1.2 vdc small ? signal characteristics current ? gain ? bandwidth product (i c = 20 madc, v ce = 10 vdc, f = 100 mhz) f t 250 ? mhz collector ? base capacitance (v cb = 5.0 vdc, i e = 0, f = 1.0 mhz) c cb ? 6.5 pf emitter ? base capacitance (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) c eb ? 30 pf input impedance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h ie 1.0 15 k voltage feedback ratio (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h re 0.1 8.0 x 10 ? 4 small ? signal current gain (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h fe 40 500 ? output admittance (i c = 1.0 madc, v ce = 10 vdc, f = 1.0 khz) h oe 1.0 30 mhos switching characteristics delay time (v cc = 30 vdc, v eb = 2.0 vdc, i c = 150 madc, i b1 = 15 madc) t d ? 15 ns rise time t r ? 20 storage time (v cc = 30 vdc, i c = 150 madc, i b1 = i b2 = 15 madc) t s ? 225 ns fall time t f ? 30 2. pulse test: pulse width 300 s, duty cycle 2.0%. zener diode ? electrical characteristics (v f = 0.9 max @ i f = 10 ma for all types) device test current izt ma zener voltage vz z zk i z = 0.5 ma max z zt i z = izt @ 10% mod max max ir @ vr d vz /dt (mv/k) @ i zt1 = 5 ma c pf max @ v r = 0 f = 1 mhz min max a v min max NSM6056MT1G 5.0 5.49 5.73 200 40 1.0 2.0 ? 2.0 2.5 200
NSM6056MT1G http://onsemi.com 3 typical electrical characteristics ? npn transistor -55 c figure 1. dc current gain i c , collector current (a) figure 2. collector saturation region i b , base current (ma) 0.4 0.6 0.8 1.2 0.2 v , collector-emitter voltage (volts) 0 ce i c = 1.0 ma 0.001 10 ma 100 ma 500 ma 50 250 300 500 0.01 h , dc current gain 0.1 0 1 fe t j = 150 c 400 25 c v ce = 5.0 v v ce = 2.0 v v ce = 1.0 v figure 3. collector ? emitter saturation voltage vs. collector current i c , collector current (a) 0.15 0.20 0.30 0.35 0.05 vce(sat), collector-emitter saturation voltage (v) 0.01 0.1 0 1 150 c 0.0001 0.01 0.1 1.0 110 300 ma 100 150 200 350 450 -55 c 0.001 25 c 0.10 0.25 i c /i b = 10 100
NSM6056MT1G http://onsemi.com 4 typical electrical characteristics ? npn transistor figure 4. base ? emitter saturation voltage vs. collector current figure 5. base ? emitter turn on voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 1.1 1 0.1 0.01 0.001 0.0001 0.3 0.4 0.5 0.6 0.7 0.9 1.0 v be(sat) , base ? emitter satura- tion voltage (v) v be(on) , base ? emitter turn on voltage (v) 0.8 150 c 25 c ? 55 c 0.8 150 c 25 c ? 55 c i c /i b = 10 v ce = 2.0 v figure 6. current ? gain ? bandwidth product i c , collector current (ma) 10 0.1 10 1000 f t , current ? gain ? bandwidth (mhz) 100 1 100 1000 v ce = 1.0 v t a = 25 c typical electrical characteristics ? zener diode v f , forward voltage (v) figure 7. typical forward voltage 1.2 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 i f , forward current (ma) 1000 100 10 1.0 150 c 75 c 25 c 0 c
NSM6056MT1G http://onsemi.com 5 package dimensions sc ? 74 case 318f ? 05 issue m 23 4 5 6 d 1 e b e a1 a 0.05 (0.002) notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. 318f ? 01, ? 02, ? 03 obsolete. new standard 318f ? 04. c l h e dim a min nom max min millimeters 0.90 1.00 1.10 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.25 0.37 0.50 0.010 c 0.10 0.18 0.26 0.004 d 2.90 3.00 3.10 0.114 e 1.30 1.50 1.70 0.051 e 0.85 0.95 1.05 0.034 0.20 0.40 0.60 0.008 0.039 0.043 0.002 0.004 0.015 0.020 0.007 0.010 0.118 0.122 0.059 0.067 0.037 0.041 0.016 0.024 nom max 2.50 2.75 3.00 0.099 0.108 0.118 h e ? ? l 0 10 0 10 0.7 0.028 1.9 0.074 0.95 0.037 2.4 0.094 1.0 0.039 0.95 0.037 mm inches scale 10:1 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5773 ? 3850 nsm6056m/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative
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