dual n-c hannel e nhancement mode f ield e ffect t rans is tor s urface mount p ackage. t he r mal c har ac t e r is t ic s t hermal r es is tance, j unction-to-ambient r j a 62.5 /w c a s amhop microelectronics c orp. 1 p r oduc t s ummar y v ds s i d r ds (on) ( m ? ) max 30v 8.5a 19 @ v g s = 10v f e at ur e s s uper high dens e cell des ign for low r ds (on ). r ugged and reliable. 1 2 3 4 8 7 6 5 s 1 g 1 s 2 g 2 d 1 d 1 d 2 d 2 s o-8 1 28 @ v g s = 4.5v s t m6915 dec, 12 2006 ab s olut e maximum r at ing s (t a =25 c unles s otherwis e noted) p arameter s ymbol unit drain-s ource voltage v ds v g ate-s ource voltage v g s v drain c urrent-c ontinuous @ t a -p uls ed a a a w drain-s ource diode f orward c urrent maximum p ower dis s ipation operating j unction and s torage temperature r ange t j , t s t g c a a a b 25 c 70 c t a= 25 c t a=70 c a n-channel 2 30 20 8.56.5 40 1.7 1.44 -55 to -150 id is idm p d
s t m6915 e l e c t r ic al c har ac t e r is t ic s (t a 25 c unles s otherwis e noted) = p arameter s ymbol c ondition min typ max unit of f c har ac t e r is t ic s drain-s ource b reakdown voltage b v ds s = v g s 0v, i d 250ua = 30 v zero g ate voltage drain c urrent i ds s v ds 24v, v g s 0v = = 1 ua g ate-b ody leakage i g s s v g s 20v, v ds 0v = = na on c har ac t e r is t ic s b g ate t hres hold voltage v g s (th) v ds v g s , i d = 250ua = 1 v drain-s ource on-s tate r es is tance r ds (on) v g s 10v, i d 8a 19 v g s 4.5v ,i d 5a 28 on-s tate drain c urrent i d(on) v ds = 5v, v g s = 10v a s f orward trans conductance f s g v ds 5v, i d 6a dy namic c har ac t e r is t ic s c input c apacitance c is s c r s s c os s output c apacitance r evers e trans fer c apacitance v ds =15v, v g s = 0v f =1.0mh z p f p f p f s wit c hing c har ac t e r is t ic s c turn-on delay time r is e time turn-off delay time t d(on) t r t d(of f ) t f v dd = 15v, i d = 1a, v g s = 10v, r g e n = 6 ohm r l = 15 ohm ns ns ns ns total g ate c harge g ate-s ource c harge g ate-drain c harge q g q gs q gd v ds =15v, i d = 8a, v g s =4.5v nc nc nc c f all t ime == = = = = 2 100 m ohm m ohm nc v ds =15v, i d =8a,v g s =10v v ds =15v, i d =8a,v g s =4.5v 15 13 770 160 16.5 1.8 16 22 3 95 3.5 2.2 7.9 14.6 29 16 14
s t m6915 p arameter s ymbol c ondition min typ max unit e l e c t r ic al c har ac t e r is t ic s (t a =25 c unles s otherwis e noted) dr ain-s o ur c e dio de c har ac t e r is t ic s diode f orward voltage v s d v g s = 0v, is =1.7a 0.82 1.2 v b c notes c.g uaranteed by des ign, not s ubject to production tes ting. b.p uls e tes t:p uls e width 300us , duty c ycle 2%. f igure 1. output c haracteris tics f igure 2. trans fer c haracteris tics v g s , g ate-to-s ource voltage (v ) v ds , drain-to-s ource voltage (v ) i d , drain c urrent(a) i d , drain c urrent (a) a.s urface mounted on f r 4 b oard, t 10s ec. 3 50 40 30 20 10 0 0 0.5 1 1.5 2 2.5 3 v g s =10v v g s =4.5v 15 12 96 3 0 0.0 0.8 1.6 2.4 3.2 4.0 4.8 v g s =2.5v v g s =3v v g s =3.5v v g s =4v -55 c 25 c t j=125 c i d , drain c urrent (a) r ds (on) ( m ) 36 30 24 18 12 6 1 f igure 3. on-r es is tance vs . drain c urrent and g ate v oltage 10 20 30 40 50 1 f igure 4. on-r es is tance variation with drain c urrent and temperature on-r es is tance r ds (on) , normalized 1.75 1.60 1.45 1.30 1.15 1.00 0.85 0 100 t j( c ) 75 25 50 t j, j unction t emperature ( c ) v g s =4.5v i d =5a 125 v g s =10v i d =8a 150 v g s =10v v g s =4.5v
s t m6915 f igure 6. b reakdown v oltage v ariation with t emperature v th, normalized g ate-s ource t hres hold v oltage b v ds s , normalized drain-s ource b reakdown v oltage is , s ource-drain current (a) f igure 8. b ody diode f orward v oltage v ariation with s ource c urrent v s d , b ody diode f orward v oltage (v ) t j, j unction t emperature ( c ) t j, j unction t emperature ( c ) 4 6 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 v ds =v g s i d =250ua -50 -25 0 25 50 75 100 125 150 1.20 1.15 1.10 1.05 1.00 0.95 0.90 i d =250ua v g s , g ate-s ource voltage (v ) r ds (on) ( m ) 48 40 32 24 16 8 0 f igure 7. on-r es is tance vs . g ate-s ource v oltage 2 4 6 8 10 0 f igure 5. g ate t hres hold v ariation with t emperature i d =8a 5.0 125 c 75 c 25 c 125 c 75 c 25 c
s t m6915 6 v g s , g ate to s ource v oltage (v ) f igure 10. g ate c harge q g, t otal g ate c harge (nc ) 10 86 4 2 0 0 2 4 6 8 10 12 14 16 v ds =15v i d =8a f igure 11.s witching characteris tics r g, g ate r es is tance ( ) s witching t ime (ns ) 5 f igure 12. maximum s afe o perating area v ds , drain-s ource v oltage (v ) i d , drain c urrent (a) 50 10 1 0.1 0.03 0.1 1 10 40 v g s =10v s ingle p uls e t a =25 c r ds ( o n) l i mi t 10 ms 10 0ms 1s d c 100 10 1 1 6 10 60 100 60 600 300 250 v d s =15v ,id=1a v g s =10v f igure 9. c apacitance v ds , drain-to s ource voltage (v ) c , c apacitance (pf ) 1200 1000 800 600 400 200 0 0 5 10 15 20 25 30 c is s c os s c rs s t d ( o f f ) t d ( o n ) t r t f 0.01 0.1 1 9 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave pulse duration(sec) normalized thermal transient impedance curve normalized transient thermal resistance single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r j a 2. r j a =s ee datas heet 3. t j m- t a = p dm * r j a (t) 4. duty c ycle, d=t 1 /t 2 th th th 0.01 0.02 0.5 0.2 0.1 0.05
pac k ag e out line dime ns ions s o-8 10 s y mb ols min min 0.053 0.004 0.189 0.150 0.228 0.016 0 1.35 0.10 4.80 3.81 5.79 0.41 0 max max 0.069 0.010 0.196 0.157 0.244 0.050 8 1.75 0.25 4.98 3.99 6.20 1.27 8 millime t e r s inc he s a a1 d eh l 1 e b h e l a1 a c d 0.05 typ. 0.016 typ. 0.008 typ. 0.015x45 s t m6915
so-8 tape and reel data so-8 carrier tape so-8 reel unit: @ package sop 8n 150 ? a0 b0 k0 d0 d1 e e1 e2 p0 p1 p2 t 6.40 5.20 2.10 ? 1.5 (min) ? 1.5 + 0.1 - 0.0 12.0 2 0.3 1.75 5.5 2 0.05 8.0 4.0 2.0 2 0.05 0.3 2 0.05 unit: @ tape size 12 @ reel size ? 330 m n w w1 h k s g r v 330 2 1 62 2 1.5 12.4 + 0.2 16.8 - 0.4 ? 12.75 + 0.15 2.0 2 0.15 11 s t m6915
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