s mhop microelectronics c orp. a product summary v dss i d r ds(on) (m ) max -40v -32a 30 @ vgs=-4.5v 16 @ vgs=-10v features super high dense cell design for low r ds(on) . rugged and reliable. suface mount package. p-channel logic level enhancement mode field effect transistor www.samhop.com.tw sep,09,2013 1 details are subject to change without notice. g s s t u s e ri e s to - 2 5 2 aa ( d - p a k ) g s d s t d s e ri e s to - 2 5 1 ( i - p a k ) symbol v ds v gs i dm e as w a p d c 27 -55 to 150 i d units parameter -40 -32 -94 v v 20 t c =25 c gate-source voltage drain-source voltage thermal characteristics mj absolute maximum ratings ( t c =25 c unless otherwise noted ) limit drain current-continuous a -pulsed b a sigle pulse avalanche energy d maximum power dissipation operating junction and storage temperature range t j , t stg 50 c/w thermal resistance, junction-to-ambient r ja t c =25 c 3 c/w thermal resistance, junction-to-case r jc a t c =70 c -25.6 t c =70 c w 42 121 stu437s std437s green product e ver 1.0
symbol min typ max units bv dss -40 v 1 i gss 100 na v gs(th) -1 v 13 g fs 32 s v sd c iss 2200 pf c oss 244 pf c rss 180 pf q g 36 nc 32 nc q gs 109 nc q gd 28 t d(on) 37 ns t r 4.3 ns t d(off) 12 ns t f ns gate-drain charge v ds =-20v,v gs =0v switching characteristics gate-source charge v dd =-20v i d =-1.0a v gs =-10v r gen = 6 ohm total gate charge rise time turn-off delay time v ds =-20v,i d =-16a,v gs =-10v fall time turn-on delay time m ohm v gs =-10v , i d =-16a v ds =-10v , i d =-16a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance diode forward voltage i dss ua gate threshold voltage v ds =v gs , i d =-250ua v ds =-32v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t c =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =-250ua reverse transfer capacitance on characteristics v gs =-4.5v , i d =-12a 16 22 30 m ohm f=1.0mhz v ds =-20v,i d =-16a, v gs =-10v drain-source diode characteristics v gs =0v,i s = -4a -0.8 -1.3 v notes a.surface mounted on fr4 board,t < 10sec. b.pulse test:pulse width < 300us, duty cycle < 2%. c.guaranteed by design, not subject to production testing. d.starting t j =25 c,l=0.5mh,v dd = 20v .(see figure13) e.drain current limited by maximum junction temperature. www.samhop.com.tw sep,09,2013 2 _ _ c -1.9 -3 c _ stu437s std437s ver 1.0
www.samhop.com.tw sep,09,2013 3 -i d , drain current(a) -v ds , drain-to-source voltage(v) figure 1. output characteristics -v gs , gate-to-source voltage(v) figure 2. transfer characteristics -i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized -i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature tj( c) 30 24 18 12 6 0 0 0.8 4.8 4.0 3.2 2.4 1.6 tj=125 c -55 c 25 c 48 40 32 24 16 8 1 1 v gs =-10v v gs =-4.5v 1.5 1.4 1.3 1.2 1.1 1.0 0 0 100 75 25 50 125 150 v gs =-10v i d =-16a v gs =-4.5v i d =-12a 40 32 24 16 8 0 0 0.5 1.0 1.5 2.0 2.5 3.0 v gs =-3v v gs =-4v v gs =-3.5v v gs =-10v v gs =-4.5v 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =-250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =-250ua 8 16 24 32 40 stu437s std437s ver 1.0
www.samhop.com.tw sep,09,2013 4 r ds(on) (m ) -v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage -is, source-drain current(a) -v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) -v ds , drain-to-source voltage(v) figure 9. capacitance -v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics -i d , drain current(a) -v ds , drain-source voltage(v) figure 12. maximum safe operating area 0.1 1 10 100 100 10 1 r d s (on) limi t v gs =-10v single pulse t c =25 c 60 50 40 30 20 10 0 0 i d =-16a 25 c 125 c 75 c 10 1 20 crss css o css i 3000 2500 2000 1500 1000 500 0 10 15 20 25 30 0 5 10 8 6 4 2 0 v ds =-20v i d =-16a 100 10 1000 1 110 100 td(off ) d c 0.2 1 ms 100us 1 0 ms vds=-20v,id=-1a vgs=-10v td(on) tr tf 0 40 35 30 25 20 15 10 5 0 1.2 0.9 0.6 0.3 1.5 25 c 75 c 125 c stu437s std437s ver 1.0 2 4 6 8 10
t p v (br )dss i as figure 13b. o fr m w ave s u nc l am p e d in d u ct i ve www.samhop.com.tw sep,09,2013 5 normalized transient thermal resistance square wave pulse duration(sec) figure 14. normalized thermal transient impedance curve 2 1 0.1 0.01 10 -5 10 -4 10 -3 10 -2 10 -1 110 d=0.5 0.2 0.1 0.05 0.02 0.01 p dm t 1 t 2 1. r e jc (t)=r (t) * r e jc 2. r e jc =s ee datasheet 3. t jm- t c = p dm * r e jc (t) 4. duty cycle, d=t 1 /t 2 single pulse figure 13a. uncamped inductive test circuit r g i as 0.01 t p d.u.t l v ds + - 20v v dd stu437s std437s ver 1.0
www.samhop.com.tw sep,09,2013 6 package outline dimensions to-251 e2 d e d1 12 3 l2 p l1 h b b2 b1 e1 a c d3 a1 symbol millimeters inches min max min max a 2.100 2.500 a1 0.350 0.650 b 0.400 b1 0.650 1.050 0.500 b2 0.900 c 0.400 0.600 d 5.300 5.700 d1 4.900 5.300 6.700 d2 7.300 d3 7.000 8.000 h 10.830 e 6.300 6.700 e1 4.600 4.900 4.800 5.200 e2 l 1.300 l1 1.400 l d2 l2 p 0.800 11.430 1.700 1.800 0.500 0.900 2.300 bsc 0.091 bsc 0.083 0.098 0.014 0.026 0.016 0.031 0.026 0.041 0.020 0.035 0.016 0.024 0.209 0.224 0.193 0.209 0.264 0.287 0.276 0.315 0.426 0.450 0.248 0.264 0.181 0.193 0.189 0.205 0.051 0.067 0.055 0.071 0.020 0.035 ver 1.0 stu437s std437s
www.samhop.com.tw sep,09,2013 7 to-252 0.200 0.400 0.889 5.300 8.900 0.508 ref. l4 0.500 2.290 ref b1 6.300 6.731 b l3 1.397 1.770 l1 a1 2.743 ref. l2 5.515 4.900 1 2 3 e1 d e b2 d1 l3 l4 b1 e b h c a detail "a" 1 l l1 a1 l2 detail "a" a 2.100 2.500 max min 0.000 0.770 1.140 c 0.400 0.600 d 6.223 d1 e e 10.400 l h 1.100 1 0 7 ref. 10 max min millimeters inches 0.083 0.098 0.000 0.008 0.016 0.035 0.030 0.045 0.016 0.024 0.209 0.245 0.193 0.217 0.248 0.265 0.090 bsc 0.350 0.409 0.055 0.070 0.108 ref. 0.020 ref. 0.020 0.043 0 7 ref . 10 symbols e1 4.400 5.004 0.173 0.197 b2 4.800 5.460 0.189 0.215 1.700 0.890 0.035 0.067 ver 1.0 stu437s std437s
www.samhop.com.tw sep,09,2013 8 to-251 tube/to-252 tape and reel data to-252 carrier tape to-252 reel unit: @ package to-252 (16 @ * a0 b0 k0 d0 d1 ee1e2p0 p1 p2 t 6.96 2 0.1 10.49 2.79 ? 2 ? 1.5 + 0.1 - 0 16.0 2 0.3 1.75 2 0.1 7.5 2 0.15 8.0 2 0.1 4.0 2 0.1 2.0 2 0.15 0.3 2 0.05 unit: @ tape size 16 @ reel size ? 330 m n w t h k s g r v ? 330 2 0.5 ? 97 2 1.0 17.0 + 1.5 - 0 2.2 ? 13.0 + 0.5 - 0.2 10.6 2.0 2 0.5 " a" to-251 tube 540 1.5 + 2~ ? 3.0 4.5 5.5 7.50 1.25 0.4 1.90 1.4 6.60 1.65 2.25 19.75 5.25 d1 a0 d0 p0 e1 e2 p1 p2 b0 t k0 feed direction t n m w g v r e 2 0.1 2 0.1 s k h ver 1.0 stu437s std437s
www.samhop.com.tw 9 top marking definition to-252 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) stu437s smc internal code no. (a,b,c...z) ver 1.0 stu437s std437s sep,09,2013
www.samhop.com.tw 10 top marking definition to-251 xxxxxx product no. samhop logo wafer lot no. production date (1,2 ~ 9, a,b.....) production month (1,2 ~ 9, a,b,c) production year (2009 = 9, 2010 = a.....) std437s smc internal code no. (a,b,c...z) ver 1.0 sep,09,2013 stu437s std437s
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