s mhop microelectronics c orp. a STE336S symbol v ds v gs i dm a i d units parameter 30 v v 20 gate-source voltage drain-source voltage product summary v dss i d r ds(on) (m ) typ 30v 22a 8.7 @ vgs=4.5v 4.7 @ vgs=10v features super high dense cell design for low r ds(on) . rugged and reliable. surface mount package. n-channel logic level enhancement mode field effect transistor absolute maximum ratings ( t a =25 c unless otherwise noted ) limit drain current-continuous -pulsed a a ver 1.0 www.samhop.com.tw jan,31,2013 1 details are subject to change without notice. w p d c -55 to 175 t a =25 c maximum power dissipation operating junction and storage temperature range t j , t stg t a =70 c a t a =70 c w 22 77 3.8 green product 18.4 2.6 40 c/w thermal characteristics thermal resistance, junction-to-ambient r ja t a =25 c pin 1 power pak 5 x 6 4 3 2 1 5 6 7 8
symbol min typ max units bv dss 30 v 1 i gss 100 na v gs(th) v 4.7 g fs s c iss 1260 pf c oss 244 pf c rss 203 pf q g 23 nc 35 64 9 t d(on) 21 ns t r ns t d(off) ns t f ns v ds =15v,v gs =0v switching characteristics v dd =15v i d =1a v gs =10v r gen = 6 ohm total gate charge rise time turn-off delay time fall time turn-on delay time m ohm v gs =10v , i d =11a v ds =10v , i d =11a input capacitance output capacitance dynamic characteristics r ds(on) drain-source on-state resistance forward transconductance i dss ua gate threshold voltage v ds =v gs , i d =250ua v ds =24v , v gs =0v v gs = 20v , v ds =0v zero gate voltage drain current gate-body leakage current electrical characteristics ( t a =25 c unless otherwise noted ) off characteristics parameter conditions drain-source breakdown voltage v gs =0v , i d =250ua reverse transfer capacitance on characteristics v gs =4.5v , i d =8a 5.9 8.7 11.8 m ohm b f=1.0mhz b STE336S ver 1.0 www.samhop.com.tw jan,31,2013 2 nc q gs nc q gd 2.3 6.2 gate-drain charge gate-source charge v ds =15v,i d =11a, v gs =10v drain-source diode characteristics and maximum ratings nc 11 v ds =15v,i d =11a,v gs =10v v ds =15v,i d =11a,v gs =4.5v v sd diode forward voltage v gs =0v,i s =6a 0.8 1.2 v notes a.pulse test:pulse width < 300us, duty cycle < 2%. b.guaranteed by design, not subject to production testing. _ _ 1 1.8 3 26
STE336S ver 1.0 www.samhop.com.tw jan,31,2013 3 tj( c ) i d , drain current(a) v ds , drain-to-source voltage(v) figure 1. output characteristics v gs , gate-to-source voltage(v) figure 2. transfer characteristics i d , drain current(a) r ds(on) (m ) r ds(on) , on-resistance normalized i d , drain current(a) tj, junction temperature( c ) figure 3. on-resistance vs. drain current and gate voltage figure 4. on-resistance variation with drain current and temperature vth, normalized gate-source threshold voltage bvdss, normalized drain-source breakdown voltage tj, junction temperature( c ) figure 5. gate threshold variation with temperature tj, junction temperature( c ) figure 6. breakdown voltage variation with temperature 24 20 16 12 8 4 0 1 v gs =10v v gs =4.5v 0.4 0.2 1.6 1.4 1.2 1.0 0.8 0.6 125 150 100 75 50 25 0 -25 -50 v ds =v gs i d =250ua 1.15 1.10 1.05 1.00 0.95 0.90 0.85 125 150 100 75 50 25 0 -25 -50 i d =250ua 80 64 48 16 0 0 0.5 1.0 1.5 2.0 2.5 3.0 30 24 18 12 6 0 0 0.8 4.8 4.0 3.2 2.4 1.6 tj=125 c 0 100 75 25 50 125 150 2.0 1.8 1.6 1.4 1.2 1.0 0 v gs =10v i d =11a 32 80 64 48 32 16 v gs =4v v gs =10v 25 c -55 c v gs =4.5v i d =8a v gs =3.5v v gs =5v v gs =4.5v v gs =3v
STE336S ver 1.0 www.samhop.com.tw jan,31,2013 4 r ds(on) (m ) v gs , gate-to-source voltage(v) figure 7. on-resistance vs. gate-source voltage is, source-drain current(a) v sd , body diode forward voltage(v) figure 8. body diode forward voltage variation with source current c, capacitance(pf) v ds , drain-to-source voltage(v) figure 9. capacitance v gs , gate to source voltage(v) qg, total gate charge(nc) figure 10. gate charge switching time(ns) rg, gate resistance( ) figure 11. switching characteristics i d , drain current(a) v ds , drain-source voltage(v) figure 12. maximum safe operating area ciss coss crss 1800 1500 1200 900 600 300 0 10 15 20 25 30 0 5 110 100 1 10 300 td(on) tr 30 25 20 15 10 5 0 0 125 c 25 c i d =11a 75 c 20.0 10.0 1.0 0 0.3 0.6 0.9 1.2 1.5 5.0 25 c 125 c 75 c 0.1 1 10 100 100 10 1 0.1 10 8 6 4 2 0 v ds =15v i d =11a 10 8 6 4 2 03 24 21 18 15 912 6 vds=15v,id=1a vgs=10v 100 td(off ) tf v gs =10v single pulse t a =25 c r ds (on ) limi t dc 1 s 100 m s 10ms 1ms 1 0 0 u s 1 0 us
STE336S www.samhop.com.tw jan,31,2013 5 ver 1.0 0.001 0.01 0.1 1 single pulse p dm t 1 t 2 1. r thj a (t)=r (t) * r ja 2. r ja =s ee datasheet 3. t jm- t a =p dm *r ja (t) 4. duty cycle, d=t 1 /t 2 th th th 0.5 normalized transient thermal resistance square wave pulse duration(sec) figure 13. normalized thermal transient impedance curve 0.00001 1000 100 10 1 0.1 0.01 0.001 0.0001 0.2 0.1 0.05 0.02 0.01
STE336S www.samhop.com.tw jan,31,2013 6 package outline dimensions ver 1.0 top view power pak 5 x 6 bottom view side view symbols millimeters a a1 b c d f e h l1 min max 0.800 1.000 0.000 0.050 0.350 0.490 0.254 ref. 4.900 5.100 1.400 ref. 5.700 5.900 5.950 6.200 e k j l 0.100 0.180 0.600 ref. 0.150 e b l1 e h d k g f 10 o typ. a r 0.25 typ. c detail "a" a1 detail "a" l j 1.270 bsc. g 4.000 ref. 3.400 ref. 1.00 * 0.035 dp.
|
