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| 2012. 3. 29 1/2 semiconductor technical data kds193 silicon epitaxial planar diode revision no : 2 ultra high speed switching application. features h small package : sot-23. h low forward voltag : v f =0.9v(typ.). h fast reverse recovery time : t rr =1.6ns(typ.). h small total capacitance : c t =0.9pf(typ.). maximum rating (ta=25 ? ) dim millimeters sot-23 a b c d e 2.93 0.20 1.30+0.20/-0.15 0.40+0.15/-0.05 2.40+0.30/-0.20 g 1.90 h j k l m n 0.95 0.13+0.10/-0.05 0.00 ~ 0.10 0.55 q 0.1 max 0.20 min 1.00+0.20/-0.10 m j k e 1 2 3 h g a n c b d 1.30 max ll pp p7 + _ q 1. nc 2. cathode 3. anode 2 1 3 electrical characteristics (ta=25 ? ) type name marking lot no. f 3 characteristic symbol test condition min. typ. max. unit forward voltage v f(1) i f =1ma - 0.60 - v v f(2) i f =10ma - 0.72 - v f(3) i f =100ma - 0.90 1.20 reverse current i r v r =80v - - 0.5 a total capacitance c t v r =0, f=1mhz - 0.9 3.0 pf reverse recovery time t rr i f =10ma - 1.6 4.0 ns characteristic symbol rating unit maximum (peak) reverse voltage v rm 85 v reverse voltage v r 80 v maximum (peak) forward current i fm 300 ma average forward current i o 100 ma surge current (10ms) i fsm 2 a power dissipation p d 150 mw junction temperature t j 150 ? storage temperature range t stg -55 q 150 ?
2012. 3. 29 2/2 kds193 revision no : 2 |
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