2002. 1. 30 1/1 semiconductor technical data e35a37vbs, e35a37vbr stack silicon diffused diode revision no : 1 alternator diode for automotive application. features average forward current : i o =35a. zener voltage : 37v(typ.) polarity e35a37vbs (+ type) e35a37vbr (- type) maximum rating (ta=25 ) dim millimeters b-pf 11.5 max 12.75+0.09-0.00 1.3 0.04 4.2 0.2 8.0 0.2 typ 0.5 10.0 0.2 0.4 0.1 x 45 0.2+0.1 28.35 0.5 a 8.5 max h b c d e f g h i j k f e i d g b j k a + _ + _ + _ + _ + _ + _ electrical characteristics (ta=25 ) characteristic symbol test condition min. typ. max. unit forward voltage v f i fm =100a - - 1.15 v zener voltage v z i z =10ma 34 37 40 v reverse current i r v r =32v - - 10 a transient thermal resistance v f i fm =100a, i m =100ma, pw=100ms - - 70 mv breakdown voltage v br i rsm =35a, pw=10ms - - 55 v temperature coefficient t i z =10ma - 27 - mv/ reverse leakage current under high temperature hi r ta=150 , v r =32v - - 100 a temperature resistance r th dc total junction to case - - 0.8 /w characteristic symbol rating unit average forward current i f(av) 35 a peak 1 cycle surge current i fsm 300 (60hz) a repetitive peak reverse surge current (pulse width=10ms) i rsm 35 a transient peak reverse voltage v rsm 34 v peak reverse voltage v rm 32 v junction temperature t j -40 215 storage temperature range t stg -40 215
|
