high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 1 ? ? ? ? ? wfp7n60 ? 600v n-channel mosfet features low intrinsic capacitances ? excellent switching characteristics ? to \ 220 ?? g \ gate,d \ drain,s \ sourse ? extended safe operating area ? unrivalled gate charge :qg= 40nc (typ.) bvdss=600v,id=7a r ds(on) :1.2 ? (max) @vg=10v ? 100% avalanche tested absolute maximum ratings tc=25 unless other wise noted symbol parameter wfp7n60 units v dss drain-sourse voltage 600 v i d drain current -continuous (tc=25 ) 7 a -continuous (tc=100 ) 4.7 a v gs gate-sourse voltage 30 v e as single plused avanche energy (note1) 420 mj i ar avalanche current ( note2) 7 a p d power dissipation (tc=25 ) 147 w t j ,t stg operating and storage temperature range -55 ~ +150 tl maximum lead temperature for soldering purpose,1/8? from case for 5 seconds 300 thermal characteristics ? symbol parameter typ. max units r jc thermal resistance,junction to case -- 0.88 /w r cs thermal resistance,case to sink 0.5 -- /w r ja thermal resistance,junc tion to ambient -- 62.5 /w www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 2 ? ? electrical characteristics tc = 2 5 unless other wise noted ? symbol parameter test condition min. typ. max units off characteristics bv dss drain-sourse breakdown voltage id=250 a vgs=0 600 -- -- v bv dss / t j breakdown voltage temperature conficient i d =250 a,reference to 25 -- 0.67 -- v/ idss zero gate voltage drain current vds=600v, vgs=0v -- -- 10 a vds=480v, tc=125 100 a igssf gate-body leakage current, forward vgs=+30v, vds=0v -- -- 100 na ? igssr gate-body leakage current, reverse vgs=-30v, vds=0v -- -- -100 na ? on characteristics ? v gs(th) date threshold voltage id=250ua,vds=vgs 2 -- 4 v r ds(on) static drain-sourse on-resistance id=3.7a,vgs=10v -- -- 1.2 ? dynamic characteristics ciss input capacitance vds=25v vgs=0 f=1.0mhz -- 1100 1430 pf coss output capacitance -- 135 175 pf crss reverse transfer capacitance -- 16 21 pf switching characteristics ? td(on) turn-on delay time vdd=300v id=7a rg=25 (note 3,4) -- 30 70 ns tr turn-on rise time -- 80 170 ns td(off) turn-off delay time -- 65 140 ns tf turn-off fall time -- 60 130 ns qg total gate charge vds=480,vgs=10v id=7a (note 3,4) -- 29 38 nc qgs gate-sourse charge -- 7 -- nc qgd gate-drain charge 14.5 -- nc drain-sourse diode characteristics and maximum ratings i s maximun continuous drain-sourse diode forward current -- -- 7 a i sm maximun plused drain-sourse diodeforwad current -- -- 28 a v sd drain-sourse diode forward voltage id=7a -- -- 1.5 v trr reverse recovery time i s =7a,v gs =0v di f /dt=100a/ s (note3) -- 320 -- ns qrr reverse recovery charge -- 2.4 -- c *notes ? 1, l=15.7mh, ias=7a, vdd=50v, rg=25 ? , starting tj =25c ? 2, repetitive rating : pulse width lim ited by maximum junction temperature 3, pulse test : pulse width 300 s, duty cycle 2% 4, essentially independent of operating temperature ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 3 ? ? typical characteristics www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 4 ? ? typical characteristics (continued) www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 5 ? ? www.wisdom-technologies.com
high voltage n-channel mosfet ? ? ? ?? rev.a0,august ? , ? 2010 ? | ? 6 ? ? www.wisdom-technologies.com
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