zxmp6a13fq document number ds36684 rev. 2 - 2 1 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq 60v p-channel enhanc ement mode mosfet product summary v (br)dss max r ds(on) max i d t a = +25c -60v 400m ? @ v gs = -10v -1.1a 600m ? @ v gs = -4.5v -0.9a description this mosfet utilizes a unique structure that combines the benefits of low on-resistance with fast sw itching speed, making it ideal for high-efficiency power management applications. applications ? dc - dc converters ? power management functions ? relay and solenoid driving ? motor control features ? fast switching speed ? low input capacitance ? low gate charge ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? qualified to aec-q101 standards for high reliability ? ppap available mechanical data ? case: sot23 ? case material: molded plastic, ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin plated leads, solderable per mil-std-202, method 208 ? weight: 0.008 grams (approximate) ordering information (notes 4 & 5) product compliance case quantity per reel ZXMP6A13FQTA automotive sot23 3,000 units notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. see http://www.diodes.com/quality/lead_free.html for more in formation about diodes incorporated?s definitions of halogen- a nd antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. automotive products are aec-q101 qualified and are ppap c apable. automotive, aec-q101 and standard products are electrical ly and thermally the same, except where specified. 5. for packaging details, go to our websit e at http://www.diodes.com /products/packages.html marking information top view equivalent circuit 7p6 = product type marking code d s g top view pin out d s g 7p6 sot23
zxmp6a13fq document number ds36684 rev. 2 - 2 2 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage v dss -60 v gate-source voltage v gs 20 v continuous drain current v gs = 10v (note 7) t a = +70c (note 7) (note 6) i d -1.1 -0.8 -0.9 a pulsed drain current (note 8) i dm -4.0 a continuous source current (body diode) (note 7) i s -1.2 a pulsed source current (body diode) (note 8) i sm -4.0 a thermal characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol value unit power dissipation (note 6) linear derating factor p d 625 5 mw mw/c power dissipation (note 7) linear derating factor p d 806 6.5 mw mw/c thermal resistance, junction to ambient (note 6) r ja 200 c/w thermal resistance, junction to ambient (note 7) r ja 155 c/w thermal resistance, junction to leads (note 9) r jl 194 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 6. for a device surface mounted on 25 mm x 25mm fr4 pcb with high coverage of single sided 1oz copper, in still air condi tions 7. for a device surface mounted on fr4 pcb measured at t 5 secs. 8. repetitive rating 25mm x 25mm fr4 pcb, d = 0.05 pulse width = 10 s - pulse current limited by maximum junction temperature. 9. thermal resistance from junction to solder-point (at the end of the collector lead).
zxmp6a13fq document number ds36684 rev. 2 - 2 3 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq thermal characteristics 110100 10m 100m 1 10 single pulse t amb =25c r ds(on) limited 100s 1ms 10ms 100ms 1s dc safe operating area -i d drain current (a) -v ds drain-source voltage (v) 0 20 40 60 80 100 120 140 160 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 derating curve temperature (c) max power dissipation (w) 100 1m 10m 100m 1 10 100 1k 0 50 100 150 200 t amb =25c transient thermal impedance d=0.5 d=0.2 d=0.1 single pulse d=0.05 thermal resistance (c/w) pulse width (s) 100 1m 10m 100m 1 10 100 1k 1 10 single pulse t amb =25c pulse power dissipation pulse width (s) maximum power (w)
zxmp6a13fq document number ds36684 rev. 2 - 2 4 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics drain-source breakdown voltage bv dss -60 ? ? v i d = -250 a, v gs = 0v zero gate voltage drain current i dss ? ? -0.5 a v ds = -60v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = ? 20v, v ds = 0v on characteristics gate threshold voltage v gs ( th ) -1.0 ? -3.0 v i d = -250 a, v ds = v gs static drain-source on-resistance (note 10) r ds (on) ? ? 0.4 ? v gs = -10v, i d = -0.9a 0.6 v gs = -4.5v, i d = -0.8a forward transconductance (notes 10 and 12) g fs ? 1.8 ? s v ds = -15v, i d = -0.9a diode forward voltage (note 10) v sd ? -0.85 -0.95 v t j = +25c, i s = -0.8a, v gs = 0v reverse recovery time (note 12) t r r ? 21.1 ? ns t j = +25c, i f = -0.9a, di/dt = 100a/ s reverse recovery charge (note 12) q r r ? 19.3 ? nc dynamic characteristics (note 12) input capacitance c iss ? 219 ? pf v ds = -30v, v gs = 0v f = 1.0mhz output capacitance c oss ? 25.7 ? reverse transfer capacitance c rss ? 20.5 ? turn-on delay time (note 11) t d ( on ) ? 1.6 ? ns v dd = -30v, i d = -1a, r g ? 6.0 ? ?? v gs = -10v turn-on rise time (note 11) t r ? 2.2 ? turn-off delay time (note 11) t d ( off ) ? 11.2 ? turn-off fall time (note 11) t f ? 5.7 ? total gate charge (note 11) q g ? 2.9 ? nc v ds = -30v, v gs = -4.5v, i d = -0.9a total gate charge (note 11) q g ? 5.9 ? nc v ds = -30v, v gs = -10v, i d = -0.9a gate-source charge (note 11) q g s ? 0.74 ? gate-drain charge (note 11) q g d ? 1.5 ? notes: 10. measured under pulsed conditions. pulse width = 300 s. duty cycle 2%. 11. switching characteristics are independent of operating junction temperature. 12. for design aid only, not subject to production testing
zxmp6a13fq document number ds36684 rev. 2 - 2 5 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq typical characteristics 0.1 1 10 0.1 1 10 0.1 1 10 0.01 0.1 1 10 12345 0.1 1 -50 0 50 100 150 0.6 0.8 1.0 1.2 1.4 1.6 1.8 0.1 1 10 1 0.4 0.6 0.8 1.0 1.2 1.4 0.01 0.1 1 10 10v 4.5v 3.5v -v gs 2.5v 2v 3v output characteristics t = 25c -v gs -i d drain current (a) -v ds drain-source voltage (v) 5v 4.5v 3.5v 3v 2v 1.5v 10v 2.5v output characteristics t = 150c -i d drain current (a) -v ds drain-source voltage (v) typical transfer characteristics -v ds = 10v t = 25c t = 150c -i d drain current (a) -v gs gate-source voltage (v) normalised curves v temperature r ds(on) v gs = -10v i d = -0.9a v gs( th) v gs = v ds i d = -250ua normalised r ds(on) and v gs(th) tj junction temperature (c) 1.5v 7v 5v 10v 3v 2v 4v 3.5v 2.5v on-resistance v drain current t = 25c -v gs r ds(on) drain-source on-resistance ??? -i d drain current (a) t = 150c t = 25c source-drain diode forward voltage -v sd source-drain voltage (v) -i sd reverse drain current (a)
zxmp6a13fq document number ds36684 rev. 2 - 2 6 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq typical characteristics - continued 0.1 1 10 0 100 200 300 c rss c oss c iss v gs = 0v f = 1mhz c capacitance (pf) -v ds - drain - source voltage (v) 0123456 0 2 4 6 8 10 v ds = -30v i d = -0.9a gate-source voltage v gate charge capacitance v drain-source voltage q - charge (nc) -v gs gate-source voltage (v) test circuits
zxmp6a13fq document number ds36684 rev. 2 - 2 7 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq package outline dimensions please see ap02002 at http://www.diodes.com /datasheets/ap02002.pdf for latest version. suggested pad layout please see ap02001 at http://www.diodes.com/dat asheets/ap02001.pdf for the latest version. sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.890 1.00 0.975 k1 0.903 1.10 1.025 l 0.45 0.61 0.55 l1 0.25 0.55 0.40 m 0.085 0.150 0.110 a ? 8 all dimensions in mm dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z j k 1 k l 1 h l m a l l 7 a c b d a
zxmp6a13fq document number ds36684 rev. 2 - 2 8 of 8 www.diodes.com december 2013 ? diodes incorporated zxmp6a13fq important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhanc ements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability ari sing out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability w hatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death as sociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more un ited states, international or foreign trademarks. this document is written in english but may be translated into multiple languages for reference. only the english version of t his document is the final and determinative format released by diodes incorporated. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support devic e or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2013, diodes incorporated www.diodes.com
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