sup/SUB85N02-06 vishay siliconix new product document number: 71287 s-01613erev. a, 24-jul-00 www.vishay.com faxback 408-970-5600 1 n-channel 20-v (d-s), 175 c mosfet v (br)dss (v) r ds(on) ( ) i d (a) a 20 0.006 @ v gs = 4.5 v 85 20 0.009 @ v gs = 2.5 v 85 d g s n-channel mosfet to-220ab top view gds sup85n02-06 SUB85N02-06 to-263 s g top view drain connected to tab d
parameter symbol limit unit drain-source voltage v ds 20 v gate-source voltage v gs 12 v continuous drain current (t j = 175 c) t c = 25 c i d 85 a a continuous drain current (t j = 175 c) t c = 100 c i d 75 a pulsed drain current i dm 240 a avalanche current i ar 30 repetitive avalanche energy b l = 0.1 mh e ar 45 mj power dissipation t c = 25 c p d 120 a w operating junction and storage temperature range t j , t stg 55 to 175 c
parameter symbol limit unit junction - to - ambient pcb mount (to-263) c r thja 40 c/w j unc ti on- t o- a m bi en t free air (to-220ab) r thja 62.5 c/w junction-to-case r thjc 1.25 notes: a. see soa curve for voltage derating. b. duty cycle 1%. c. when mounted on 1o square pcb (fr-4 material).
sup/SUB85N02-06 vishay siliconix new product www.vishay.com faxback 408-970-5600 2 document number: 71287 s-01613erev. a, 24-jul-00
|