dmhc10h170sfj document number: ds37571 rev. 2 - 2 1 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information 100v complementary enhancement mode mosfet h-bridge product summary device v (br)dss r ds(on)max i d t a = +25c q1 & q4 100v 160m @ v gs = 10v 2.9a 200m @ v gs = 4.5v 2.6a q2 & q3 -100v 250m @ v gs = -10v -2.3a 300m @ v gs = -4.5v -2.1a description this new generation mosfet is designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high-efficiency power managemen t applications. applications ? high-efficiency bridge rectifiers features ? low on-resistance ? low input capacitance ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) mechanical data ? case: v-dfn5045-12 ? case material: molded plastic, ?green? molding com pound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminal connections: see diagram ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? weight: 0.097 grams (approximate) ordering information (note 4) part number case tape width packaging dmhc10h170sfj-13 v-dfn5045-12 12mm 3,000/tape & ree l notes: 1. no purposely added lead. fully eu directi ve 2002/95/ec (rohs) & 2011/65/eu (rohs 2) complian t. 2. see http://www.diodes.com/quality/lead_free.htm l for more information about diodes incorporated?s definitions of halogen- and antimony-free, "green" and lead-free. 3. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <9 00ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4. for packaging details, go to our website at http://www.diodes.com/products/packa ges.html. marking information bottom view pin 1 d1/d2 d1/d2 d3/d4 d3/d4 g1 s1 s1 g2 s2 s2 g4 s4 s4 g3 s3 s3 internal schematic d1,d2 to backside d3,d4 to backside s3 pin s3 pin g3 pin s4 pin s4 pin g4 pin s2 pin s2 pin g2 pin s1 pin s1 pin g1 pin 6 5 4 3 2 1 7 8 9 10 11 12 q4 (nch) q1 (nch) q3 (pch) q2 (pch) top view v-dfn5045-12 c170s j ww yy =manufacturer?s marking c170sj = product type marking code yyww = date code marking yy = last digit of year (ex: 14 = 2014) ww = week code (01 to 53)
dmhc10h170sfj document number: ds37571 rev. 2 - 2 2 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information maximum ratings q1 & q4 n-channel (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss 100 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = 10v steady state t c = +25c t a = +25c i d 9.3 2.9 a maximum body diode forward current (note 5) i s 2.5 a pulsed drain current (10s pulse, duty cycle = 1%) i dm 10.1 a maximum ratings q2 & q3 p-channel (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit drain-source voltage v dss -100 v gate-source voltage v gss 20 v continuous drain current (note 5) v gs = -10v steady state t c = +25c t a = +25c i d -7.4 -2.3 a maximum body diode forward current (note 5) i s -2.4 a pulsed drain current (10s pulse, duty cycle = 1%) i dm -9.1 a thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value unit total power dissipation (note 5) t c = +25c p d 20 w t a = +25c 2.1 thermal resistance, junction to ambient (note 5) r ja 60 c/w thermal resistance, junction to case (note 5) r j c 6 operating and storage temperature range t j, t stg -55 to +150 c note: 5. device mounted on fr-4 substrate pc board, 2oz copper, with 1inch square copper pad layout.
dmhc10h170sfj document number: ds37571 rev. 2 - 2 3 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information electrical characteristics q1 & q4 n-channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain-source breakdown voltage bv dss 100 ? ? v v gs = 0v, i d = 250a zero gate voltage drain current i dss ? ? 1 a v ds = 80v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) 1.0 2.0 3.0 v v ds = v gs , i d = 250a static drain-source on-resistance r ds(on) ? 111 160 m v gs = 10v, i d = 5a ? 121 200 v gs = 4.5v, i d = 5a diode forward voltage v sd ? 0.9 1.0 v v gs = 0v, i s = 10a dynamic characteristics (note 7 ) input capacitance c iss ? 1,167 ? pf v ds = 25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 36 ? reverse transfer capacitance c rss ? 25 ? gate resistance r g ? 1.3 ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = 4.5v) q g ? 4.9 ? nc v ds = 80v, i d = 12.8a total gate charge (v gs = 10v) q g ? 9.7 ? gate-source charge q gs ? 2.0 ? gate-drain charge q gd ? 2.0 ? turn-on delay time t d( on ) ? 10.5 ? ns v dd = 50v, r g = 25 , i d = 12.8a turn-on rise time t r ? 11.1 ? turn-off delay time t d( off ) ? 42.6 ? turn-off fall time t f ? 12.8 ? body diode reverse recovery time t rr ? 30.3 ? ns v gs = 0v, i s = 12.8a, di/dt = 100a/ s body diode reverse recovery charge q rr ? 35.2 ? nc v gs = 0v, i s = 12.8a, di/dt = 100a/ s electrical characteristics q2 & q3 p-channel (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 6 ) drain-source breakdown voltage bv dss -100 ? ? v v gs = 0v, i d = -250a zero gate voltage drain current i dss ? ? 1 a v ds = -80v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 6 ) gate threshold voltage v gs( th ) -1.0 -1.6 -3.0 v v ds = v gs , i d = -250a static drain-source on-resistance r ds(on) ? 191 250 m v gs = -10v, i d = -5a ? 213 300 v gs = -4.5v, i d =-5a diode forward voltage v sd ? -0.9 -1.2 v v gs = 0v, i s = -5a dynamic characteristics (note 7 ) input capacitance c iss ? 1,239 ? pf v ds = -25v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 42 ? reverse transfer capacitance c rss ? 28 ? gate resistance r g ? 13 ? v ds = 0v, v gs = 0v, f = 1.0mhz total gate charge (v gs = -4.5v) q g ? 8.4 ? nc v ds = -60v, i d = -5a total gate charge (v gs = -10v) q g ? 17.5 ? gate-source charge q gs ? 2.8 ? gate-drain charge q gd ? 3.2 ? turn-on delay time t d( on ) ? 9.1 ? ns v dd = -50v, r g = 9.1 , i d = -5a turn-on rise time t r ? 14.9 ? turn-off delay time t d( off ) ? 57.4 ? turn-off fall time t f ? 34.4 ? body diode reverse recovery time t rr ? 25.2 ? ns v gs = 0v, i s = -5a, di/dt = 100a/ s body diode reverse recovery charge q rr ? 24.5 ? nc v gs = 0v, i s = -5a, di/dt = 100a/ s notes: 6. short duration pulse test used to minimiz e self-heating effect. 7. guaranteed by design. not subject to production testing.
dmhc10h170sfj document number: ds37571 rev. 2 - 2 4 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information typical characteristics - n-channel 0.0 3.0 6.0 9.0 12.0 15.0 0 1 2 3 4 5 i d , drain current (a) v ds , drain-source voltage (v) figure 1. typical output characteristic v gs =10.0v v gs =5.0v v gs =4.5v v gs =4.0v v gs =3.5v v gs =3.0v 0 2 4 6 8 10 0 1 2 3 4 5 i d , drain current (a) v gs , gate-source voltage (v) figure 2 . typical transfer characteristic v ds = 5.0v -55 25 85 125 150 175 0 50 100 150 200 250 300 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain-source on-resistance (m ) i d , drain-source current (a) figure 3. typical on-resistance vs. drain current and gate voltage 10.0v 4.5v 0 50 100 150 200 250 300 350 400 450 500 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain-source on-resistance (m ) v gs , gate-source voltage (v) figure 4. typical transfer characteristic i d =5a
dmhc10h170sfj document number: ds37571 rev. 2 - 2 5 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information 0 0.1 0.2 0.3 0.4 0.5 0 3 6 9 12 15 r ds(on) , drain-source on-resistance ( ) i d , drain current(a) figure 5. typical on-resistance vs. drain current and temperature v gs =4.5v -55 25 85 125 150 175 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 r ds(on) , drain-source on-resistance (normalized) t j , junction temperature ( ) figure 6. on-resistance variation with temperature v gs =4.5v, i d =5a v gs =10v, i d =5a 0 0.1 0.2 0.3 0.4 0.5 -50 -25 0 25 50 75 100 125 150 175 r ds(on) , drain-source on-resistance ( ) t j , junction temperature ( ) figure 7. on-resistance variation with temperature v gs =10v, i d =5a v gs =4.5v, i d =5a 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( ) figure 8. gate threshold variation vs ambient temperature i d =250 a i d =1ma
dmhc10h170sfj document number: ds37571 rev. 2 - 2 6 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information 0 3 6 9 12 15 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source-drain voltage (v) figure 9. diode forward voltage vs. current v gs =0v, t a =-55 v gs =0v, t a =25 v gs =0v, t a =85 v gs =0v, t a =125 v gs =0v, t a =150 v gs =0v, t a =175 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance (pf) v ds , drain-source voltage (v) figure 10. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 3 6 9 12 15 v gs , gate-source voltage (v) qg, total gate charge (nc) figure 11. gate charge v ds =80v, i d =12.8a 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d , drain current (a) v ds , drain-source voltage (v) figure 12. soa, safe operation area t j(max) =+175 t a =+25 single pulse dut on 1*mrp board v gs =10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =100 s p w =1ms
dmhc10h170sfj document number: ds37571 rev. 2 - 2 7 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information typical characteristics - p-channel 0.0 2.0 4.0 6.0 8.0 10.0 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 i d , drain current (a) v ds , drain-source voltage (v) figure 13. typical output characteristic v gs =-2.5v v gs =-3.0v v gs =-3.5v v gs =-4.0v v gs =-4.5v v gs =-5.0v v gs =-10.0v 0 2 4 6 8 10 0 1 2 3 4 5 6 7 8 i d , drain current (a) v gs , gate-source voltage (v) figure 14. typical transfer characteristic v ds = -5.0v -55 25 85 125 150 175 0.000 0.100 0.200 0.300 0.400 0.500 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain-source on-resistance ( ) i d , drain-source current (a) figure 15. typical on-resistance vs. drain current and gate voltage v gs =-10v v gs =-4.5v 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 2 4 6 8 10 12 14 16 18 20 r ds(on) , drain-source on-resistance ( ) v gs , gate-source voltage (v) figure 16. typical transfer characteristic i d =-5a 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 3 6 9 12 15 r ds(on) , drain-source on-resistance ( ) i d , drain current(a) figure 17. typical on-resistance vs drain current and temperature v gs =-4.5v -55 25 85 125 150 175 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 -50 -25 0 25 50 75 100 125 150 175 r ds(on) , drain-source on-resistance (normalized) t j , junction temperature ( ) figure 18. on-resistance variation with temperature v gs =-10v, i d =-5a v gs =-4.5v, i d =-5a
dmhc10h170sfj document number: ds37571 rev. 2 - 2 8 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information 0 0.1 0.2 0.3 0.4 0.5 0.6 -50 -25 0 25 50 75 100 125 150 175 r ds(on) , drain-source on-esistance ( ) t j , junction temperature ( ) figure 19. on-resistance variation with temperature v gs =-10v, i d =-5a v gs =-4.5v, i d =-5a 0 0.5 1 1.5 2 2.5 3 -50 -25 0 25 50 75 100 125 150 175 v gs(th) , gate threshold voltage (v) t j , junction temperature ( ) figure 20. gate threshold variation vs ambient temperature i d =-250 a i d =-1ma 0 3 6 9 12 15 0 0.3 0.6 0.9 1.2 1.5 i s , source current (a) v sd , source-drain voltage (v) figure 21. diode forward voltage vs. current v gs =0v, t a =-55 v gs =0v, t a =25 v gs =0v, t a =85 v gs =0v, t a =125 v gs =0v, t a =150 v gs =0v, t a =175 10 100 1000 10000 0 5 10 15 20 25 30 35 40 c t , junction capacitance(pf) v ds , drain-source voltage(v) figure 22. typical junction capacitance f=1mhz c iss c oss c rss 0 2 4 6 8 10 0 3 6 9 12 15 18 v gs , gate-source voltage (v) qg, total gate charge (nc) figure 23. gate charge v ds =-60v, i d =-5a 0.001 0.01 0.1 1 10 100 0.1 1 10 100 1000 i d , drain current (a) v ds , drain-source voltage (v) figure 24. soa, safe operation area t j(max) =+175 t a =+25 single pulse dut on 1*mrp board v gs =10v r ds(on) limited dc p w =10s p w =1s p w =100ms p w =10ms p w =1ms p w =100 s
dmhc10h170sfj document number: ds37571 rev. 2 - 2 9 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information package outline dimensions please see ap02002 at http://www.diodes.com/datashe ets/ap02002.pdf for the latest version. suggested pad layout please see ap02001 at http://www.diodes.com/datashe ets/ap02001.pdf for the latest version. 0.001 0.01 0.1 1 1e-05 0.0001 0.001 0.01 0.1 1 10 100 1000 r(t), transient thermal resistance t1, pulse duration time (sec) figure 25. transient thermal resistance r ja (t)=r(t) * r ja r ja =111 /w duty cycle, d=t1 / t2 d=single pulse d=0.005 d=0.01 d=0.02 d=0.05 d=0.1 d=0.3 d=0.5 d=0.7 d=0.9 a1 seating plane k k1 k2 l b z e e e2(4x) d2(4x) d a3 a3 v - dfn5045 - 12 dim min max typ a 0.75 0.85 0.80 a1 0.00 0.05 0.02 a3 - - 0.203 b 0.25 0.35 0.30 d 4.95 5.05 5.00 d2 1.80 2.00 1.90 e 4.45 4.55 4.50 e2 0.90 1.10 1.00 e - - 0.80 k - - 0.50 k1 - - 0.50 k2 - - 0.50 l 0.45 0.55 0.50 z - - 0.35 all dimensions in mm dimensions value (in mm) c 0.800 x 0.400 x1 2.100 x2 4.500 y 0.700 y1 1.200 y2 2.700 y3 4.800 y3 x2 x1(4x) y1(4x) y2 c y x
dmhc10h170sfj document number: ds37571 rev. 2 - 2 10 of 10 www.diodes.com april 2015 ? diodes incorporated d m hc10h170sfj advance information advanced information important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranti es of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisd iction). diodes incorporated and its subsidiaries reserve th e right to make modifications, enhancements, improv ements, corrections or other changes without further notice to this document and any pro duct described herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any cu stomer or user of this document or products describ ed herein in such applications shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products pur chased through unauthorized sales channel. should customers purchase or use diodes incorporate d products for any unintended or unauthorized appli cation, customers shall indemnify and hold diodes incorporated and its representatives ha rmless against all claims, damages, expenses, and a ttorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized appl ication. products described herein may be covered by one or more united states, international or foreign patent s pending. product names and markings noted herein may also be covered by one or more uni ted states, international or foreign trademarks. this document is written in english but may be tran slated into multiple languages for reference. only the english version of this document is the final and determinative format released by diodes i ncorporated. life support diodes incorporated products are specifically not a uthorized for use as critical components in life su pport devices or systems without the express written approval of the chief executive officer of diodes incorporated. as used herein: a. life support devices or systems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to per form when properly used in accordance with instruct ions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a lif e support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or to affe ct its safety or effectiveness. customers represent that they have all necessary ex pertise in the safety and regulatory ramifications of their life support devices or systems, and acknowledge and agree that they are solely responsi ble for all legal, regulatory and safety-related re quirements concerning their products and any use of diodes incorporated products in such safety- critical, life support devices or systems, notwiths tanding any devices- or systems-related information or support that may be provided by diod es incorporated. further, customers must fully ind emnify diodes incorporated and its representatives against any damages arising out of the use of diodes incorporated products in such saf ety-critical, life support devices or systems. copyright ? 2015, diodes incorporated www.diodes.com
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