'jziizu <^s.tni-(lonauctoi i, o ne, 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 RFH35N08, rfh35n10 power mos field-effect transistors n-chanhel enhancement-mode power field-effect transistors 35 a, 80v-100v rosiom = 0.055 o features: soa is power-dissipation limited nanosecond switching speeds linear transfer characteristics high input impedance majority carrier device high-current, low-inductance package terminal diagram d n-channel enhancement mode the RFH35N08 and rfh35n10* are n-channel enhance- ment-mode silicon-gate power field-effect transistors designed for applications such as switching regulators, switching converters, motor drivers, relay drivers, and drivers for high-power bipolar switching transistors requiring high speed and low gate-drive power. these types can be operated directly from integrated circuits. the rfh-types are supplied in the jedec to-21bac plastic package. terminal designations jedec to-218ac maximum ratings, absolute-maximum values (ta = 25c): drain-source voltage voss drain-gate voltage. r,. ? 1 mo voor gate-source voltage voa drain current. rms continuous id pulsed idm power dissipation @ t0 = 25 c pi derate above tc ? 85 c RFH35N08 hfh35n10 80 80 20 35 100 150 1.2 100 100 v v v a a w w/?c operating and storage temperature. .ti, t,,, .-5510*160. nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to.be both accurate and reliable at the time of going to press. however, nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
RFH35N08, rfh35n10 electrical characteristics. ?< gait temperature (tc) = 25 c unl*m oth?rwl*? *p?cl(l?d. characteristic drain-source breakdown voltage gate threshold voltage zero gals voltage drain current gate-source leakage current drain-source on voltage static drain-source on resistance forward transconductance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time thermal resistance junction-to-case symbol bvoss vas(th) lass loss vos{on)? rns(on)* g..? c,,. c... c? ti(on) t, to(off) t< r?jc test conditions id - 1 rna vos = 0 vh5 = vdb ib = 1 ma vds - 65 v vos = 80 v tc = 125c vds = 65 v vos - 80 v vos = 20 v vos-0 lo =17.5 a vos ? 10v id = 35 a vos - 10 v lo = 17.5 a vos = 10 v vos = 10v lo= 17.5 a vos = 25 v vas = 0 v f = 1 mhz vdd = 50 v i0 = 17.5 a twn,.?son v08 = 10v RFH35N08, rfh3sn10 series limits RFH35N08 mln. 80 2 - ? ? ? ? 10 ? ? ? 45(typ) 225(typ) 240(typ) 185(typ) - max. ? 4 1 50 100 0.963 3.0 0.055 ? 3000 1500 600 100 450 450 350 0.63 rfh3sn10 mln. 100 2 - ? ? ? ? 10 ? ? - 45(typ) 225(typ) 240(typ) 165(typ) - max. ? 4 1 50 100 0.963 3.0 0.055 ? 3000 1500 600 100 450 450 350 0.63 units v v pa na v q mho pf ns c/w ?pulsed: puise duration = 300 /is max., duty cycle = 2%. source-drain diode ratings and characteristics characteristic diode forward voltage vsd ' reverse recovery time tn test conditions !sd= 17.5a if - 4a, dif/d, = 100a//js limits RFH35N08 mln. - max. 1.4 200 (typ.) rfh35n10 mln. - max. 1.4 200 (typ.) units v ns ' pulsed: pulse duration ~ 300 /is max., duty cycle = 2%.
|
