dmp 3017s fk document number : ds 37310 rev. 4 - 2 1 of 7 www.diodes.com may 2015 ? diodes incorporated dmp 3017s fk advance information new product p - channel enhancement mode mosfet product summary v (br)dss r ds( on ) max i d t a = + 25c - 3 0v 1 4 m ? @ v gs = - 10 v - 10.4 a 2 5 m ? @ v gs = - 4.5 v - 7 .8 a description this new generation mosfet is designed to minimize the on - state resistan ce (r ds(on ) ) and yet maintain superior switching performance, making it ideal for high efficiency power management applications. applications ? ? ? features and benefits ? ? ? ? esd protected gate ? totally lead - free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. green device (note 3) ? qualified to aec - q101 standards for high reliability mechanical data ? ? ? ? ? ordering information (note 4 ) part number case packaging dm p 3017 s fk - 7 u - dfn 2523 - 6 3 ,000 / tape & reel dm p 3017 s fk - 13 u - dfn2523 - 6 10 ,000 / tape & reel note s: 1 . no purposely added lead. fully eu directive 2002/95/ec (ro hs) & 2011/65/eu (rohs 2) compliant 2. see http://www.diodes.com/quality/lead_free.html for more information about diodes incorporateds definitions of hal ogen - and antimony - free, "green" and lead - f ree . 3. halogen - and antimony - free "green prod ucts are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. 4 . for packaging det ails, go to our website at http: //www.diodes.com/products/packages.html . marking informat ion date code key year 2014 2015 2016 2017 201 8 201 9 20 20 code b c d e f g h month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d u - dfn 2523 - 6 bottom view equivalent circuit p7 = product type marking code ym = date code marking y = year (ex: b = 20 1 4 ) m = month (ex: 9 = september) pin 1, 2 = source pin 3 = gate pin 4 , 5, 6 = drain pin 1 esd protected u - dfn 2523 - 6 d s g g ate protection diode p7 ym e4
dmp 3017s fk document number : ds 37310 rev. 4 - 2 2 of 7 www.diodes.com may 2015 ? diodes incorporated dmp 3017s fk advance information new product maximum ratings (@ t a = +25c, unless otherwise specified.) characteristic symbol value units drain - source voltage v dss - 3 0 v gate - source voltage v gss 25 v continuous drain current (note 6 ) v gs = - 10 v steady state t a = + 25 c t a = + 70 c i d - 10.4 - 8.3 a continuous drain current (note 6 ) v gs = - 4.5 v steady state t a = + 25 c t a = + 70 c i d - 7 .8 - 6.2 a maximum continuous body diode f orward current (note 6 ) i s - 3 a pulsed drain current ( 10 s pulse, duty cycle = 1% ) i dm - 80 a avalanche current (note 7 ) i a s - 14 a avalanche energy (note 7 ) e a s 104 mj thermal characteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol value units total power dissipation (note 5 ) p d 1 w thermal resistance, junction to ambient (note 5 ) r ? ja 123 c/w total power dissipation (note 6 ) p d 2.2 w thermal resistance, junction to ambient (note 6 ) r ? ja 55 c/w total power dissipation (note 6 ) t c = + 25c p d 1 7 w thermal resistance, junction to case (note 6 ) r ? j c 7.2 c/w operating and storage temperature range t j, t stg - 55 to + 150 c electrical c haracteristics (@ t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8 ) drain - source breakdown voltage bv dss - 3 0 v v gs = 0v, i d = - 10m a zero gate voltage drain current t j = + 25c i dss - 1 a v ds = - 2 4 v, v gs = 0v zero gate voltage drain current t j = + 1 5 0 c (note 9 ) - 1 00 gate - source leakage i gss 10 a v gs = 25 v, v ds = 0v on characteristics (note 8 ) gate thresh old voltage v gs(th) - 1 - 1.6 - 2.5 v v ds = v gs , i d = - 250 a static drain - source on - resistance r ds (on) 9.5 1 4 m ? v gs = - 10 v, i d = - 9.5 a 15 2 5 v gs = - 4 .5 v, i d = - 6.9 a diode forward voltage v sd - 0.7 - 1.2 v v g s = 0 v, i s = - 1 a on state drain current (note 9 ) i d (on) - 20 a v ds Q - 5 v, v gs = - 10 v dynamic characteristics (note 9 ) input capacitance c iss 22 07 4414 pf v ds = - 15 v, v gs = 0v , f = 1 mhz output capacitance c oss 3 90 780 reverse transfer capacitance c rss 343 686 gate resistance r g 8.4 20 ? v ds = 0 v, v gs = 0v , f = 1mhz total gate charge ( v gs = - 10v) q g 42.7 90 nc v ds = - 1 5 v, i d = - 9.5 a total gate charge ( v gs = - 4.5v) q g 2 1.6 45 gate - source charge q gs 7.9 16 gate - drain charge q gd 10 20 turn - on delay time t d(on) 7. 3 5 1 5 ns v dd = - 1 5 v, v gs = - 10 v, r g en = 6 , i d = - 9.5 a turn - on rise time t r 1 6 .4 30 turn - off delay time t d(off) 67.2 1 10 turn - off fall time t f 3 7.5 60 reverse recovery time t rr 18.6 3 5 ns i s = - 9.5 a , d i/ d t = 100a/ s reverse recovery ch arge q rr 8.6 17.5 nc notes: 5. device mounted on fr - 4 substrate pc board, 2oz copper, with minimum recommended pad layout . 6 . device mounted on fr - 4 substrate pc board, 2oz copper, with thermal vias to bottom layer 1 - inch square copper plate . 7 . uis in production with l = 1m h , t j = + 25c . 8 . short duration pulse test used to minimize self - heating effect. 9 . guaranteed by design. not subject to production testing.
dmp 3017s fk document number : ds 37310 rev. 4 - 2 3 of 7 www.diodes.com may 2015 ? diodes incorporated dmp 3017s fk advance information new product -v , drain -source voltage (v) figure 1 typical output characteristics ds - i , d r a i n c u r r e n t ( a ) d 0.0 5.0 10.0 15.0 20.0 25.0 30.0 0 1 2 3 4 5 v = -2.2v gs v = -2.5v gs v = -3.0v gs v = -3.5v gs v = -10v gs v = -4.0v gs -v , gate-source voltage (v) gs figure 2 typical transfer characteristics - i , d r a i n c u r r e n t ( a ) d 0 5 10 15 20 25 30 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 t = 150 c a ? t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? v = -5.0v ds 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 v = -4.5v gs v = -10v gs -i , drain source current (a) figure 3 typical on-resistance vs. drain current and gate voltage d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? -v , gate source voltage (v) figure 4 typical transfer characteristics gs r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 0.18 0.2 0 5 10 15 20 25 i = -9.5a d i = -6.9a d
dmp 3017s fk document number : ds 37310 rev. 4 - 2 4 of 7 www.diodes.com may 2015 ? diodes incorporated dmp 3017s fk advance information new product t , junction temperature ( c) j ? figure 6 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( n o r m a l i z e d ) d s ( o n ) 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 v = -4.5v i = -5a gs d t , junction temperature ( c) j ? figure 7 on-resistance variation with temperature r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.005 0.01 0.015 0.02 0.025 0.03 -50 -25 0 25 50 75 100 125 150 v = 5v i = a gs d -4. -5 t , ambient temperature (c) figure 8 gate threshold variation vs. ambient temperature a v , g a t e t h r e s h o l d v o l t a g e ( v ) g s ( t h ) 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 2.2 2.4 2.6 2.8 3 -50 -25 0 25 50 75 100 125 150 -i = 1ma d -i = 250a d -v , source-drain voltage (v) figure 9 diode forward voltage vs. current sd - i , s o u r c e c u r r e n t ( a ) s t = 150 c a ? 0 5 10 15 20 25 30 0 0.3 0.6 0.9 1.2 1.5 t = 125 c a ? t = 85 c a ? t = 25 c a ? t = -55 c a ? c , j u n c t i o n c a p a c i t a n c e ( p f ) t -v , drain-source voltage (v) figure 10 typical junction capacitance ds 100 1000 10000 0 5 10 15 20 25 30 f = 1mhz c oss c rss c iss -i , drain source current (a) figure 5 typical on-resistance vs. drain current and temperature d r , d r a i n - s o u r c e o n - r e s i s t a n c e ( ) d s ( o n ) ? 0 0.002 0.004 0.006 0.008 0.01 0.012 0.014 0.016 0.018 0.02 0 5 10 15 20 25 30 t = -55 c a ? t = 25 c a ? t = 85 c a ? t = 125 c a ? t = 150 c a ? v = -10v gs
dmp 3017s fk document number : ds 37310 rev. 4 - 2 5 of 7 www.diodes.com may 2015 ? diodes incorporated dmp 3017s fk advance information new product -v , drain-source voltage (v) figure 12 soa, safe operation area ds - i , d r a i n c u r r e n t ( a ) d r limited ds(on) 0.01 0.1 1 10 100 0.1 1 10 100 dc p = 10s w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w t = 150c t = 25c v = -10v single pulse j(max) a gs dut on 1 * mrp board t1, pulse duration times (sec) figure 13 transient thermal resistance r ( t ) , t r a n s i e n t t h e r m a l r e s i s t a n c e d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = 0.01 d = 0.005 single pulse r (t) = r(t) * r r = 59c/w duty cycle, d = t1/ t2 ?? ? ja ja ja 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 d = 0.7 d = 0.9 q , total gate charge (nc) figure 11 gate-charge characteristics g - v , g a t e - s o u r c e v o l t a g e ( v ) g s 0 1 2 3 4 5 6 7 8 9 10 0 5 10 15 20 25 30 35 40 45 v = -15v i = -9.5a ds d
dmp 3017s fk document number : ds 37310 rev. 4 - 2 6 of 7 www.diodes.com may 2015 ? diodes incorporated dmp 3017s fk advance information new product package outline dimensions please see ap02002 at http://w ww.diodes.com/datasheets/ap02002 .pdf for the latest version. suggested pad layout please see ap02002 at http://w ww.diodes.com/datasheets/ap02002 .pdf for the latest version. u - dfn2523 - 6 dim min max typ a 0.57 0.63 0.60 a1 0 0.05 0.02 a3 ? ? ? ? b 0.25 0.35 0.30 d 2.45 2.55 2.50 d1 1.55 1.65 1.60 e ? ? ? ? e 2.25 2.35 2.30 e1 1.18 1.28 1.23 l 0.30 0.40 0.35 l1 0.30 0.40 0.35 all dimensions in mm dim ensions value (in mm) c 0.650 x 0.400 x1 1.700 y 0.650 y1 0.450 y2 1.830 y3 2.700 a a1 a3 d e l (3x) e1 d1 b (6x) l1 (2x) e pin #1 id r0.150 x1 y1 x y3 y2 y c
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