unisonic technologies co., ltd UT75N02 preliminary power m o sfet www.unisonic.com.tw 1 of 4 copyright ? 2012 unisonic technologies co., ltd qw-r502-328.c 75 a , 2 5 v n-chan nel power mosfet ? descripti on t he u t c ut 75n02 us es adva n ced trenc h te chnol og y to pr ovid e exc e ll ent r ds ( o n) , lo w gat e charg e an d o perati on w i th lo w g a t e voltag es. t h is device is s u ita b le fo r use as a loa d s w itch o r in pw m appl icati ons. ? features * r ds(on) < 7m ? @ v gs =10v * r ds(on) < 8m ? @ v gs =7v ? symbol 1. ga te 3.source 2.dra i n to-220 to - 2 51 1 1 ? or de r i ng i n form at i o n ordering n u m ber package pin assignment packing lead free halogen free 1 2 3 UT75N02l-ta3-t UT75N02g-ta3-t to-220 g d s tube UT75N02l-tm3-t UT75N02g-tm3-t to-251 g d s tube note: pin assignment: g: gate d: drain s: source http://
UT75N02 preliminary power m o sfet unisonic technologi es co., ltd 2 of 4 w w w . uniso nic.co m.t w q w - r 5 0 2 - 3 2 8 . c ? absolute maxi mu m ra ting s (t c = 25c, unle ss other w i s e specifie d) paramet er symbol rat i ngs unit drain so urce v o ltag e v ds s 25 v gate-source v o ltag e v gss 20 v contin uo us dr ain curr ent i d 75 a pulse d drai n c u rrent (note 2) i dm 170 a avala n che c u r r ent i ar 60 a avala n che en e r g y l= 0.1mh e as 140 mj repetitiv e aval anch e ener g y ( n ote 3) l= 0.05mh e ar 5.6 mj po w e r diss i pat ion t o -220 p d 40 w t o -251 28 junctio n t e mperature t j + 150 c storage t e mperature t st g -55 ~ + 150 c note: 1. 2. 3. absol u te ma xi mum ratings a r e those v a lu e s be yo nd w h ic h the d e vic e could be perm ane ntl y dam ag ed. absol u te ma xi mum ratings ar e stress ratings onl y an d functi onal devic e op erat io n is not i m plie d. pulse w i dth lim ited b y ma xim u m junctio n temperatur e. dut y c y cle 1% . ? th er mal dat a parameter symbol ratings unit junctio n to ambient t o -220 ja 62.5 c/w t o -251 110 junction to case t o -220 jc 3.13 c/w t o -251 4.53
UT75N02 preliminary power m o sfet unisonic technologi es co., ltd 3 of 4 w w w . uniso nic.co m.t w q w - r 5 0 2 - 3 2 8 . c ? electric al ch ara cteri s tic s (t c = 25c, unless other w i se specifi ed) paramet er symbol t es t conditions min t yp max unit off characteristics drain-source breakd o w n vo l t age bv ds s v gs =0 v, i d = 250a 25 v drain-source l eaka ge curr en t i d ss v ds = 20v, v gs = 0v 25 a v ds = 20v, v gs = 0 v , t j = 125c 250 a gate-source leaka ge curr en t i gss v ds =0 v, v gs = 20v 25 0 na on cha r a c t e ristics gate threshold voltage v gs ( th ) v ds = v gs , i d = 2 50a 1 1.5 3 v on-state drain current (note 1) i d ( on ) v ds = 10v, v gs = 10v 70 a static drain - s o urce on-resist ance (note 1) r ds (on) v gs = 10v, i d = 30a 5 7 m ? v gs = 7 v , i d = 24a 6 8 m ? dyna m i c p a r a m e ters input cap a cita nce c iss v ds = 15v, v gs = 0 v, f=1mhz 500 0 pf output capac itance c oss 180 0 pf reverse t r ansfer capac itanc e c rs s 800 pf switching parameters (note 2) turn-on delay time t d ( on ) v ds = 15v, v gs = 10v, i d 30a r gs = 2.5 ? , r l = 1 ? , 7 ns t u rn-on rise t i me t r 7 ns t u rn-off delay t i me t d ( off ) 24 ns t u rn-off fall-t i me t f 6 ns t o tal gate charge q g v ds =0.5v ( br ) ds s , v gs = 10v, i d = 35a 140 nc gate source charge q gs 40 nc gate drain c h arge q gd 75 nc source- dr a i n diode r a t i ngs a n d ch a r a c te ristics f o r w a r d volt ag e (note 1) v sd i f = i s , v gs = 0 v 1.3 v contin uo us cu rrent i s 75 a notes: 1. pulse test : pulse w i dth 300 sec, dut y cy c l e 2% 2. indep endent of operating temperature
UT75N02 preliminary power m o sfet unisonic technologi es co., ltd 4 of 4 w w w . uniso nic.co m.t w q w - r 5 0 2 - 3 2 8 . c u t c as s u m e s no r e s pon s i bility f o r equipm e n t f a il u r es th at r e s u lt f r om us ing pr oducts a t v a lue s that ex ceed, ev e n m o m entar ily , r a ted v a lues ( s uch a s m a x i m u m r a tings , oper ating condition r anges , or othe r par am eter s ) lis t ed in pr oducts s pecif ications of any and all u t c pr odu c t s des cr ibed or contained her ein. u t c pr oducts ar e not des igned f o r us e in lif e s upp or t appliances , dev i c es or s y s t e m s w her e m a l f unction of thes e pr o ducts can be r eas onably ex p ected to r es ult in per s onal injur y . r epr oduction in whole or in p a r t is p r ohibited w i thout the pr ior w r it t en cons ent of the copyr i ght ow n er . t he inf o r m ation pr es e n ted in this docum ent does not f o r m par t of any quotation or contr a ct, is believ e d to be accur a te and r e liable and m a y be changed w i thout notice.
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