laser diode specifications for approval customer : model : ql90f7s-a/b/c signature of approval approved by checked by issued by approval by customer
ql90f7s-a/b/c ingaas laser diode ? overview ql90f7s-a/b/c is a mocvd grown 905nm band ingaas laser diode with quantum well structure. it?s an attractive light source, with a typical light output power of 10mw for laser, industrial optical module and sensor application ? application - sensor ? features - visible light output : p = 905 nm - optical power output : 10mw cw - package type : to-18 (5.6mm ) - built-in photo diode for monitoring laser diode ? electrical connection a ld cathode, pd anode (fig. 1) b ld , pd anode (fig. 2) c ld anode, pd cathode (fig. 3) bottom view pin configuration jun.2004. ver. 0 fig. 1 ql90f7sa fig. 2 ql90f7sb fig. 3 ql90f7sc
? absolute maximum rating at tc=25 c items symbols values unit optical output power p 12 mw laser diode reverse voltage v 2 v photo diode reverse voltage v 30 v operating temperature topr ? 10 ~ + 70 c storage temperature tstg ? 40 ~ + 85 c ? electrical and optical characteristics at tc=25 c items symbols min. typ. max. unit condition optical output power po - 10 - mw - threshold current ith - 15 25 ma - operating current iop - 40 60 ma po=10mw operating voltage vop 1.6 2.0 2.5 v po=10mw slope efficiency se 0.3 0.5 0.7 mw/ma lasing wavelength p 895 905 915 nm po=10mw ?? 9 13 15 deg po=10mw beam divergence 26 33 36 deg po=10mw ? ?? - - ?? 2.5 deg po=10mw beam angle ? - - ?? 3.0 deg po=10mw monitor current im 0.1 0.4 0.6 ma po=10mw optical distance ? x, ? y, ? z - - 60 m po=10mw the above product specifications are subject to change without notice. notice : ql90f7s-a/b/c to be operated on apc
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