toaucti, una* 20 stern ave. springfield, new jersey 07081 u.s.a. telephone: (973) 376-2922 (212)227-6005 fax: (973) 376-8960 2N6904 n-channel logic level power mos field-effect transistors (l2 fet) 8 a, 200 v ros(on): 0.6 0 features: ? design optimized tor 5 volt gate drive ? can be driven directly from q-mos, n-mos, ttl circuits ? compatible with automotive drive requirements ? soa is power-dissipation limited ? nanosecond switching speeds ? linear transfer characteristics ? high input impedance ? majority carrier device n-channel enhancement mode terminal diagram the 2N6904 is an n-channel enhancement-mode silicon- gate power mos field-effect transistor specifically designed for use with logic level (5 volt) driving sources in applications such as programmable controllers, automotive switching, and solenoid drivers. this performance is accomplished through a special gate oxide design which provides full rated conduction at gate biases in the 3-5 volt range, thereby facilitating true on-off power control directly from logic circuit supply voltages. the 2N6904 is supplied in the jedec to-204aa steel package. terminal designation source jedec to-204aa maximum ratings, absolute maximum values (tc = 25 c): ? drain-source voltage, vd? . 200v ' drain-gate voltage (r? = 1 mo), voor 20 v ' gate-source voltage, va? 10 v ' dain current, rms continuous, id 8 a pulsed, low .' 20 a ? power dissipation, pi at tc = 25c 75 w above tc = 25"c, derate linearly -6 w/c ' operating and storage temperature, t,. t.,. -58 to -h50-c ? lead temperature. tl at distance > 1/8 in. (3.17 mm) from seating plane for 10s man 260c nj semi-conductors reserves the right to change test conditions, parameter limits and package dimensions without notice. information furnished by nj semi-conductors is believed to be both accurate and reliable at the time of going to press. however. nj semi-conductors assumes no responsibility for any errors or omissions discovered in its use. nj semi-conductors encourages customers to verify that datasheets are current before placing orders. quality semi-conductors
2N6904 electrical characteristics at c??e twnptratur* (tc = 25 c) unless otherwlm specified characteristic drain-source breakdown voltage bvoss gate threshold voltage vos(th) zero gate voltage drain current loss gate-source leakage current loss drain-source on voltage vos(on)? static drain-source on resistance r0s(on)? forward transconductance g** input capacitance c*. output capacitance c0>> reverse-transfer capacitance c,?, turn-on delay time mon) rise time t, turn-off delay time td(off) fall time t, thermal resistance junction-to-case rftc test conditions id = 1 ma, vos = 0 vos * vds, id = 1 ma vds = 160v tc = 125c, vos = 160v vqs = 10 v, vds = 0 id = 5.1 a, vqs = 5 v id = 8 a, vos = 5 v id = 5.1 a tc=125c, i0=5.1 a, vos=5v vds = 5v, id = 5.1 a v,,s = 25 v vgs = 0 v f = 0.1 mhz vod=100v id = 5.1 a rq?:= rg. = 15 o vas = 5 v limits min. 200 1 ? ? ? ? ? ? ? 3 350 75 20 ? ? ? ? ? max. ? 2 1 50 100 3.06 5.5 0.6 1.11 12 900 250 100 45 150 135 150 1.67 units v v m na v ft mho pf ns c/w source-drain diode ratings and characteristics characteristic diode forward voltage vsoa reverse recovery time t,. test conditions isd = 8 a if = 4a dif/dt= 100a//us limits min. 0.8 ? max. 1.6 625 units v ns * in accordance with jedec registration data. ?pulsed: pulse duration = 300 fjs, max., duty cycle = 2%.
|
