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product data sheet 1 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b product description the triquint tga2503-sm is a ku-band packaged power amplifier. the tga2503- sm operates from 12.5-16 ghz and is designed using triquint?s proven standard 0.5-um power phemt production process. the tga2503-sm typically provides 32 dbm of saturated output power with small signal gain of 32 db. the tga2503-sm is ideally suited for the vsat ground terminal market and point-to- point radio. evaluation boards are available upon request. lead-free and rohs compliant primary applications ? ku-band vsat ? point-to-point radio 32 dbm ku-band amplifier tga2503-sm measured performance bias conditions: vd = 6 v, idq = 600 ma key features ? typical frequency range: 12.5 - 16 ghz ? 32 dbm nominal psat ? 32 db nominal gain ? 37 dbm output toi @ pin = -20dbm ? 8 db typical return loss ? bias conditions: vd = 6v, idq = 600 ma (id = 1200ma under rf drive) ? package dimensions: 4.0 x 4.0 x 0.9 mm datasheet is subject to change without notice .
product data sheet 2 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b tga2503-sm symbol parameter value notes vd-vg drain to gate voltage 13 v vd drain voltage 8 v 2 / vg gate voltage range -5 to 0 v id drain current 1300 ma 2 / ig gate current range -18 to 18 ma pin input continuous wave power 21 dbm 2 / tchannel channel temperature 200 c table i absolute maximum ratings 1 / 1 / these ratings represent the maximum operable val ues for this device. stresses beyond those listed under ?absolute maximum ratings? may cause perma nent damage to the device and/or affect device lifetime. these are stress ratings only, and functional operation of the device at these conditions is not implied. 2 / combinations of supply voltage, supply current, input power, and output power shall not exceed the maximum power dissipation listed in table iv. symbol parameter value vd drain voltage 6 v idq drain current 600 ma id_drive drain current under rf drive 1200 ma vg gate voltage -0.6 v table ii recommended operating conditions
product data sheet 3 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b table iii rf characterization table (t a = 25 c, nominal) bias conditions: vd = 6v, idq = 600ma symbol parameter test condition nominal * units gain small signal gain f = 12.5 ? 16 ghz 32 db irl input return loss f = 12.5 ? 16 ghz 10 db orl output return loss f = 12.5 ? 16 ghz 8 db nf noise figure f = 12.5 ? 16 ghz 9 db psat saturated output power f = 12.5 ? 16 ghz f = 13.75 ? 14.5 ghz 31 32 dbm toi third order intercept @ pin = -20dbm f = 12.5 ? 16 ghz 36 dbm * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded. tga2503-sm
product data sheet 4 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b table iv power dissipation and thermal properties parameter test conditions value maximum power dissipation tbaseplate = 85 oc pd = 8.1 w tchannel = 200 oc thermal resistance, jc vd = 6 v id = 600 ma pd = 3.6 w tbaseplate = 85 oc jc = 14.2 (oc/w) tchannel = 136 oc tm = 3.4e+6 hrs thermal resistance, jc under rf drive vd = 6 v id = 1200 ma pout = 32 dbm pd = 5.6 w tbaseplate = 85 oc jc = 14.2 (oc/w) tchannel = 165 oc tm = 3.0e+5 hrs mounting temperature 30 seconds 260 c storage temperature -65 to 150 oc median lifetime (tm) vs. channel temperature tga2503-sm
product data sheet 5 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b measured performance* bias conditions: vd = 6 v, idq =600 ma * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded. tga2503-sm
product data sheet 6 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b measured performance bias conditions: vd = 6 v, idq =600 ma * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded. tga2503-sm
product data sheet 7 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b measured performance bias conditions: vd = 6 v, idq = 600 ma * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded. tga2503-sm
product data sheet 8 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b measured performance bias conditions: vd = 6 v, idq =600 ma * note: all measured data is taken using connectorized evaluation boards. the reference plane is at rf connectors, and hence connector and board loss has not been de- embedded. tga2503-sm
product data sheet 9 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b pin description 1, 2, 4, 5, 6, 7, 9, 11, 13, 14, 15, 17, 18, 20, 22, 24 n/c 3r f i n p u t 8v g 1 10 vg2 12 power ref 16 rf output 19 vd2 21 vd1 23 ref 25 gnd bottom view top view dot indicates pin 1 package pinout diagram 13 12 11 9 10 8 18 14 15 16 17 19 20 25 22 21 23 6 7 1 5 4 3 2 24 2503 date code lot code parts manufactured after date code 0637 will use the marking plan shown. parts manufactured prior to this dat e use the marking plan shown in the prior revision of this data sheet (may 2006) tga2503-sm
product data sheet 10 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b mechanical drawing units: millimeters gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. tga2503-sm
product data sheet 11 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b vd = 6v 4700 pf 100 pf vg = ~-0.6v to obtain 600ma drain current 4700 pf 100 pf tuning stub 0 29 54 4 3 2 6 1 8 3 0 gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. * this layout shows the tuning configuration used to obtain the measured data. the layout configuration may vary depending on the specific application. pcb is ro4003 8 mil thickness, 0.5 oz standard copper cladding, with er = 3.38. recommended board layout assembly * units: mils t u 0 29 54 4 3 2 6 1 8 3 0 tga2503-sm
product data sheet 12 triquint semiconductor: www.triquint.com (972)994- 8465 fax (972)994-8504 info-networks@tqs.com january 2013 ? rev b ordering information part package style tga2503-sm qfn 24l 4x4 surface mount recommended surface mount package assembly proper esd precautions must be followed while handling packages. clean the board with acetone. rinse with alc ohol. allow the circuit to fully dry. triquint recommends using a conductive solder paste for attachment. follow solder paste and reflow oven vendors? recommendations when developing a solder reflow profile. typical solder reflow profiles are listed in the table below. hand soldering is not recommended. solder paste c an be applied using a stencil printer or dot placement. the volume of solder paste depends on pcb and component layout and should be well controlled to ensure consistent mechanical and electrical performance. clean the assembly with alcohol. gaas mmic devices are susceptible to damage from electrostatic discharge . proper precautions should be observed during handling, assembly and test. typical solder reflow profiles reflow profile snpb pb free ramp-up rate 3 c/sec 3 c/sec activation time and temperature 60 ? 120 sec @ 140 ? 160 c 60 ? 180 sec @ 150 ? 200 c time above melting point 60 ? 150 sec 60 ? 150 sec max peak temperature 240 c 260 c time within 5 c of peak temperature 10 ? 20 sec 10 ? 20 sec ramp-down rate 4 ? 6 c/sec 4 ? 6 c/sec tga2503-sm

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