general description product summary v ds @ t j,max 700v i dm 8a r ds(on),max < 3.3 q g,typ 5.1nc e oss @ 400v 1.2 m j applications 100% uis tested 100% r g tested symbol v ds v gs i dm l=1mh i ar e ar e as t j , t stg t l symbol r q ja r q cs r q jc mj dv/dt w w/c mj 600 orderable part number form minimum order quantity absolute maximum ratings t a =25c unless otherwise noted 30 v gate-source voltage v 2500 tape & reel i d a 2 maximum units a c package type ? trench power alphamos-ii technology ? low r ds(on) ? low ciss and crss ? high current capability ? rohs and halogen free compliant ? general lighting for led and ccfl ? ac/dc power supplies for industrial, consumer, an d telecom 100 v/ns parameter drain-source voltage AOD2C60 to-252 -55 to 150 maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds 2 typical maximum 20 power dissipation b mosfet dv/dt ruggedness peak diode recovery dv/dt repetitive avalanche energy c single pulsed avalanche energy h 300 0.4 derate above 25 c p d 52 t c =25c 87 junction and storage temperature range thermal characteristics parameter 2 pulsed drain current c 1.6 avalanche current c t c =25c t c =100c continuous drain current 8 c/w 45 55 maximum junction-to-ambient a,d c units maximum junction-to-case d,f c/w c/w 2 2.4 maximum case-to-sink a - 0.5 g d s g s d g s d top view to-252 dpak bottom view AOD2C60 1 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD2C60
symbol min typ max units 600 700 bv dss / ? tj 0.59 v/ o c 1 10 i gss 100 na v gs(th) gate threshold voltage 3 4.5 5 v r ds(on) 2.7 3.3 g fs 1.8 s v sd 0.81 1 v i s 2 a i sm 8 a c iss 304 pf c oss 15 pf c o(er) 15 pf c o(tr) 22 pf c rss 1 pf r g 6.8 q g 5.1 10 nc q gs 2.3 nc q gd 1 nc t d(on) 18 ns t r 13 ns t d(off) 21 ns t f 16 ns t rr 224 ns q rr 1.3 m c turn-on rise time turn-on delaytime diode forward voltage dynamic parameters body diode reverse recovery charge body diode reverse recovery time i f =2a,di/dt=100a/ m s,v ds =100v turn-off delaytime turn-off fall time v gs =10v, v ds =300v, i d =2a, r g =25 w i f =2a,di/dt=100a/ m s,v ds =100v v reverse transfer capacitance v ds =5v , i d =250 m a output capacitance forward transconductance i s =1a,v gs =0v v ds =40v, i d =1a v gs =10v, i d =0.5a v gs =0v, v ds =100v, f=1mhz maximum body-diode continuous current electrical characteristics (t j =25c unless otherwise noted) static parameters parameter conditions i d =250 a, v gs =0v, t j =150c breakdown voltage temperature coefficient i d =250 a, v gs =0v i dss zero gate voltage drain current v ds =600v, v gs =0v bv dss drain-source breakdown voltage i d =250 a, v gs =0v, t j =25c gate-body leakage current v gs =10v, v ds =480v, i d =2a total gate charge gate source charge gate drain charge switching parameters gate resistance f=1mhz static drain-source on-resistance input capacitance m a v ds =480v, t j =125c maximum body-diode pulsed current c effective output capacitance, energy related i effective output capacitance, time related j v gs =0v, v ds =100v, f=1mhz v gs =0v, v ds =0 to 480v, f=1mhz v ds =0v, v gs =30v a. the value of r qja is measured with the device in a still air environ ment with t a =25c. b. the power dissipation p d is based on t j(max) =150c in a to252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. c. repetitive rating, pulse width limited by juncti on temperature t j(max) =150c. d. the r qja is the sum of the thermal impedance from junction to case r qjc and case to ambient. e. the static characteristics in figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max . f. these curves are based on the junction-to-case t hermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of t j(max) =150c. g.these tests are performed with the device mounted on 1 in 2 fr-4 board with 2oz. copper, in a still air environ ment with t a =25c. h. l=60mh, i as =1.7a, v dd =150v, r g =10 , starting t j =25c. i. c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v (br)dss. j. c o(tr) is a fixed capacitance that gives the same chargin g time as c oss while v ds is rising from 0 to 80% v (br)dss. 2 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD2C60
typical electrical and thermal characteristics 0 2 4 6 8 10 0 1 2 3 4 5 i d (a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) ( w w w w ) 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 1e+02 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c 0 0.5 1 1.5 2 2.5 3 -100 -50 0 50 100 150 200 temperature (c) figure 4: on-resistance vs. junction temperature normalized on-resistance v gs =10v i d =0.5a v gs =10v 0 1 2 3 4 5 0 5 10 15 20 25 30 v ds (volts) figure 1: on-region characteristics i d (a) v gs =5.5v 6v 6.5v 10v 8v 7v 0.7 0.8 0.9 1 1.1 1.2 1.3 -100 -50 0 50 100 150 200 t j (c) figure 5: break down vs. junction temparature bv dss (normalized) 0.1 1 10 2 4 6 8 10 v gs (volts) figure 2: transfer characteristics i d (a) -55c v ds =40v 25c 125c 3 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD2C60
typical electrical and thermal characteristics 0 3 6 9 12 15 0 2 4 6 8 10 q g (nc) figure 7: gate-charge characteristics v gs (volts) 0.1 1 10 100 1000 10000 0.1 1 10 100 1000 v ds (volts) figure 8: capacitance characteristics capacitance (pf) c iss c oss c rss v ds =480v i d =2a 0 0.5 1 1.5 2 2.5 3 0 25 50 75 100 125 150 t case (c) figure 12: current de-rating (note f) current rating i d (a) 0.01 0.1 1 10 1 10 100 1000 i d (amps) v ds (volts) figure 10: maximum forward biased safe operating area (note f) 10 m s 10ms 1ms dc r ds(on) limited t j(max) =150c t c =25c 100 m s 0 0.5 1 1.5 2 2.5 3 0 100 200 300 400 500 v ds (volts) figure 9: coss stored energy eoss(uj) e oss 0 12 24 36 48 60 0 25 50 75 100 125 150 t case (c) figure 11: power de-rating (note b) power dissipation (w) 4 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD2C60
typical electrical and thermal characteristics 0.001 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 15: normalized maximum transient thermal imp edance (note f) z q q q q jc normalized transient thermal resistance d=t on /t t j,pk =t c +p dm .z q jc .r q jc r q jc =2.4c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 0 100 200 300 400 500 0.0001 0.001 0.01 0.1 1 10 100 pulse width (s) figure 14: single pulse power rating junction-to- ambient (note g) power (w) t j(max) =150c t a =25c 0 200 400 600 800 1000 0.0001 0.001 0.01 0.1 1 10 pulse width (s) figure 13: single pulse power rating junction-to- case (note f) power (w) t j(max) =150c t c =25c 0.001 0.01 0.1 1 10 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 16: normalized maximum transient thermal imp edance (note g) z q q q q ja normalized transient thermal resistance d=t on /t t j,pk =t a +p dm .z q ja .r q ja r q ja =55c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse single pulse t on t p d 5 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD2C60
- + vdc ig vds dut - + vdc vgs vgs 10v qg qgs qgd charge gate charge test circuit & waveform - + vdc dut vdd vgs vds vgs rl rg vgs vds 10% 90% resistive switching test circuit & waveforms t t r d(on) t on t d(off) t f t off vdd vgs id vgs rg dut - + vdc l vgs vds id vgs bv i unclamped inductive switching (uis) test circuit & waveforms ig vgs - + vdc dut l vds vgs vds isd isd diode recovery test circuit & waveforms vds - vds + i f ar dss 2 e = 1/2 li di/dt i rm rr vdd vdd q = - idt ar ar t rr 6 of 6 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification AOD2C60
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