*rohs directive 2002/95/ec jan 27 2003 including annex april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector tisp4a270h3bj asymmetrical-bidirectional thyristor spd smb package (top view) device symbol and circuit application description the tisp4a270h3bj is an asymmetrical-bidirectional thyristor surge protective device (spd). it is designed to limit the peak vo ltages on the r line (ring line) terminal of ?581/2/3 lcas (line card access switch) devices. the tisp4a270h3bj must have the bar-indexed terminal 1 (g) connected to the protective ground and terminal 2 (r) connected to the r line terminal. the tisp4a270h3bj voltages are chosen to give r line terminal protection for all lcas switch conditions. the most potentially stressful condition is low level power cross when the switches are closed. under this condition, the tisp4a270h3bj limits the voltage and corresponding lcas dissipation until the lcas thermal trip operates and opens the switches. under open-circuit ringing conditions, the r line terminal will have high peak voltages. for battery backed ringing, the r line terminal will have a larger peak negative voltage than positive, i.e. the peak voltages are asymmetric. the tisp4a270h3bj has a similar volta ge asymmetry which will allow the maximum possible ringing voltage, while still giving protection. with a connected telephone line , the lcas t line (tip line) terminal voltage levels will be less than 50 % of the open-circuit r line terminal values. so the t line terminal can be protected by a symmetrical-bidirectional overvoltage protector of the tisp4xxxh3bj series. how to order optimized lcas r line protector tisp4a270h3bj v (bo) derived from: -break switch, sw1 & sw2, ratings -ring return switch, sw3, rating -ringing access switch, sw4, rating -switch isolation ratings -battery voltage range of -40 v to -60 v -power fault conditions -lightning impulse conditions -lcas characteristic temperature range tisp4a270h3bj designed for: -battery-backed ringing circuits voltage swing . . . . . .+148 v to -206 v allows . . . . . . . . . . .103 v rms ringing with -60 v battery temperature range . .-40 c to +85 c rated for international surge wave shapes 12 r g md4a270b ring tip sw4 ringing access switch tisp4a270h3 ai4bitama '7581 lcas t line t bat r bat f gnd v bat sw1 break switch sw2 break switch scr, diode pr otection sw3 ring return switch r ringing t ring ing r line control logic tisp4165h3 r g d gn d v dd t sd latch input device v drm v v (bo) v ?a270 +160 +217 -222 -270 wave shape standard i ppsm a 2/10 gr-1089-core 500 10/700 it u-t k.20/45/21 150 10/1000 gr-1089-core 100 device package carrier tisp4a270h3bj bj (smb/do-214aa with j-bend) r (embossed tape reeled) tisp4a270h3bjr -s order as .......................................ul recognized component *rohs compliant
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector description (continued) these devices allow signal voltages up to the maximum off-state voltage value, v drm , see figure 1. voltages above v drm are clipped and will not exceed the breakover voltage, v (bo) , level. if sufficient current flows due to the overvoltage, the device switches into a low-voltage on-state condition, which diverts the current from the overvoltage though the device. when the diverted current falls below the holding current, i h , level the devices switches off and restores normal system operation. the tisp4a270h3bj is guaranteed to voltage limit and withstand the listed international lightning surges in both polarities. th is high current protection device is in a plastic smb package (jedec do-214aa) and supplied in embossed tape reel pack. absolute maximum ratings, t a = 25 ? (unless otherwise noted) rating symbol v alue unit repetitive peak off-state voltage, (see note 1) t a = 25 c t a = -40 c v drm +160/-222 148/-206 v non-repetitive peak on-state pulse current (see notes 2 and 3) i ppsm a 2/10 (gr-1089-core, 2/10 voltage wave shape) 500 5/310 (itu-t k.44, 10/700 s voltage wave shape used in k.20/45/21) 150 10/1000 (gr-1089-core, 10/1000 voltage wave shape) 100 non-repetitive peak on-state current (see notes 2, 3 and 4) i tsm 55 60 2.2 a 20 ms (50 hz) full sine wave 16.7 ms (60 hz) full sine wave 1000 s 50 hz/60 hz a.c. initial rate of rise of on-state current, exponential current ramp, maximum ramp value < 200 a di t /dt 400 a/ s junction temperature t j -40 to +150 c storage temperature range t stg -65 to +150 c notes: 1. see figure 7 for voltage values at intermediate temperatures. 2. initially, the tisp4a270h3bj must be in thermal equilibrium with t j = 25 c. 3. the surge may be repeated after the tisp4a270h3bj returns to its initial conditions. 4. eia/jesd51-2 environment and eia/jesd51-3 pcb with standard footprint dimensions connected with 5 a rated printed wiring track widths. see figure 6 for the current ratings at other durations. derate current values at -0.61 % / c for ambient temperatures above 25 c. overload ratings, t a = 25 ? (unless otherwise noted) rating symbol value unit maximum overload on-state current without open circuit, 50 hz/60 hz a.c. (see note 5) a 0.03 s 0.07 s 1.6 s 5.0 s 1000 s i t(ov)m 60 40 8 7 2.2 a rms note 5: peak overload on-state current during a.c. power cross tests of gr-1089-core and ul 1950/60950. these electrical stress levels may damage the tisp4a270h3bj silicon chip. after test, the pass criterion is either that the device is functional or, if it is faulty, that it has a short circuit fault mode. in the short circuit fault mode, the following equipment is protected as the de vice is a permanent short across the line. the equipment would be unprotected if an open circuit fault mode developed.
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector electrical characteristics, t a = 25 ? (unless otherwise noted) parameter test conditions min typ max unit i drm repetitive peak off- state current v d = +100 v and -200 v t a = 25 c t a = 85 c 5 10 a v (bo) breakover voltage dv/dt = 250 v/ms, r source = 300 ? +217 -270 v i (bo) breakover current dv/dt = 250 v/ms, r source = 300 ? 0.15 0.6 a i h holding current i t = 5 a, di/dt = +/-30 ma/ms 0.15 0.6 a dv/dt critical rate of rise of off-state voltage linear voltage ramp, maximum ramp value < 0.85v drm 5 kv/ s i d off-state current v d = 50 v t a = 85 c 10 a c off off-state capacitance f = 1 mhz, v d = 1 v rms v d = 100 v v d =50v v d =10v v d =5v v d =2v v d =1v v d =0 v d =-1v v d =-2v v d =-5v v d =-10v v d =-50v v d =-100v 21 27 41 48 56 61 68 62 56 48 40 25 20 23 29 46 53 62 67 74 68 62 52 45 28 22 pf . v (bo) ramp breakover voltage dv/dt 1 kv/ s, linear voltage ramp, maximum ramp value = 500 v dv/dt = 20 a/ s, linear current ramp, maximum ramp value = 10 a +231 -288 v thermal characteristics parameter test conditions min typ max unit r ja junction to free air thermal resistance eia/jesd51-3 pcb, i t = i tsm(1000) , t a = 25 c, (see note 6) 113 c/w 265 mm x 210 mm populated line card, 4-layer pcb, i t = i tsm(1000) , t a = 25 c 50 note 6: eia/jesd51-2 environment and pcb has standard footprint dimensions connected with 5 a rated printed wiring track widths.
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector parameter measurement information figure 1. volt age-current characteristic for r and g terminal pair a ll measurem ents are referenced to the g terminal -v v drm i drm v d i h i tsm i ppsm v (bo) i (bo) i d quadrant i switching characteristic switching characteristic +v +i v (bo) i (bo) v drm i drm v d i d i h i tsm i ppsm -i quadrant iii pmxxaea
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector t ypical characteristics figure 2. figure 3. figure 4. figure 5. off-state current vs junction temperature t j - junction temperature - c -25 0 25 50 75 100 125 150 |i d | - off-st ate current - a 0001 001 01 1 10 100 tchag v d = 50 v normalized breakover voltage vs junction temperature t j - ju nction t emperature - c -25 0 25 50 75 100 125 150 normalized breakover vo ltage 0.95 1.00 1.05 1.10 tc4haf on-state current vs on-state voltage v t - on-state voltage - v 0.7 1.5 2 3 4 5 7 110 i t - on-state current - a 1.5 2 3 4 5 7 15 20 30 40 50 70 150 200 1 10 100 t a = 25 c t w = 100 s tc4hacba normalized holding current vs j unction temperature t j - junction t emperature - c -25 0 25 50 75 100 125 150 normalized holding current 0.4 0.5 0.6 0.7 0.8 0.9 1.5 2.0 1.0 tc4had
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector rating and thermal information figure 6. figure 7. non-repetitive peak on-state current vs current duration t - current duration - s 01 1 10 100 1000 i tsm(t) - non-repetitive peak on-state current - a 1.5 2 3 4 5 6 7 8 9 15 20 30 10 ti4hac v gen = 600 vrms, 50/60 hz r gen = 1.4*v gen /i tsm(t) eia/jesd51-2 environment eia/jesd51-3 pcb t a = 25 c v drm derating factor vs minimum ambient temperature t amin - mi nimum ambient temperature - c -35 -25 -15 -5 5 15 25 -40 -30 -20 -10 0 10 20 derating factor 0.93 0.94 0.95 0.96 0.97 0.98 0.99 1.00 ti4hadc
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector applications information calculation of the tisp4a270h3bj voltage values figure 8 and the following text summarizes the derivation process for the tisp4a270h3bj voltages. details of the full process a nd other design aspects are covered by the document entitled tisp4a270h3bj - optimized ?58x lcas overvoltage protection . fi gure 8. derivation of ti sp4a270h3bj v (bo) and v drm maximum sw 1, sw2, sw3 and isolation voltag es at t amin system t amin calculation of r line protector voltage parameters maximum t line and r line voltage ratings set by sw1, sw2 and sw3 maximum t bat , r bat and t ringing bi as voltages on sw1, sw2 and sw3, 0, v bat maximum protector v (bo) at t a = 25 c maximum po wer f ault and impulse protection voltag e in cr ease of 25 c v (bo) = 1.15 x prote ctor v drm at t a = 25 c v (bo) /v drm factor for specific v (bo) voltage minimu m protec tor v drm at t amin r line protector v (bo) @ 25 c v drm at 25 c and t amin v drm versus te mper ature data and t amin a b c d e ai4citrama
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector calculation of the tisp4a270h3bj voltage values (continued) box a: the voltage rating of the break and ring return switches and their isolation decreases with temperature. at the minimum lcas operating temperature of -40 c, the switch rating is 310 v. box b: a switch pole voltage rating to ground is reduced by any opposing bias voltage applied to the other pole. for battery-backed ri nging the d.c. bias on t ringing is zero. bias voltages are applied to the r bat and t bat poles by the slic. for slic output levels of zero and -60 v, the r line and t line voltage ratings to ground become +250 v and -310 v at -40 c. box c: allowing for the extreme condition of a power fault at -40 c, the overvoltage protector v (bo) at its highest temperature must not exceed +250 v and -310 v. the ieee standard c62.37.1-2000, ieee guide for the application of thyristor surge protective devices, pp 25-27 r ecommends a factor of 1.15 for the ratio of the power fault v (bo) to the 25 c v (bo) . applying this factor makes the 25 c v (bo) voltage values +217 v and -270 v. box d: from the v (bo) values the values of protector 25 c v drm were determined as +160 v and -222 v. box e: derating the 25 c v drm down to the lcas minimum operating temperature gives -40 c v drm values of +148 v and -206 v. a further rating check has to be done on the ringing access switch, sw4. the limit condition is in the negative ringing polarit y. the applied ringing voltage to the r ringing terminal must not exceed -205 v when the r line terminal is at +250 v. for a battery voltage of -40 v and -60 v the a.c. ringing levels must not exceed 117 v rms and 102 v rms respectively. in ivd (integrated voice data) applications the a .c. ringing level must be reduced by the level of digital signal applied to the line. for a 20 v peak adsl signal level, the ringing voltages red uce to 103 v rms and 89 v rms respectively. figure 9 shows a typical application circuit. fuses f1 and f2 need high breaking capacity to safely interrupt 40 a rms (ul 6095 0) and 60 a rms (telcordia gr-1089-core) currents from a 600 v rms source. the bourns telefuse type b1250t is a surface mount fuse which has ul recognition for these ul and telcordia standards. the tisp4a270h3bj is overload rated to carry currents up to 60 a rms f or the time period that it takes the fuse to operate. figure 9. adsl ivd us ing common prot ection tisp4a270h 3 ti b1250t b1250t sp4165h3 r g ring generator r1 v bat v ring slic ring tip sw3 ring return switch sw4 ringing acce ss switc h sw 1 br eak switch control logic ai4aitam a f1 f2 a dsl m odem v bat v adsl t line r ringing t ringing t bat r bat f gnd v bat sw2 br eak switch scr, diode protection r line low pass filter high pass filter c1 r2 fuse overcu rrent protectors d gnd v dd t sd latch input '7581 lcas
april 2002 - revised january 2007 specifications are subject to change without notice. customers should verify actual device performance in their specific applications. tisp4a270h3bj lcas r line protector mechanical data recommended printed wiring land pattern dimensions smb land pattern mdxx bid 2.54 (.10 0) 2.40 (.09 5) 2.16 (.08 5) dimensions are: millimeters (inches) carrier information device symbolization code devices will be coded as below. terminal 1 is indicated by an adjacent bar marked on the package body. for production quantities, the carrier will be embossed tape reel pack. evaluation quantities may be shipped in bulk pack or em bossed tape. devic e symbo lization code tisp4a 270h3bj 4a270h pa ck ag ec a rrier standard quantity sm be mbossed tape reel pack 3000
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