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matched monolithic dual transistor data sheet mat01 features low v os (v be m atch): 40 v typ ical , 100 v max imum low tcv os : 0.5 v/ c max imum high h fe : 500 min imum excellent h fe l inearity from 10 na to 10 ma low n oise v oltage: 0.23 v p - p from 0.1 hz to 10 hz high b reakdown: 45 v min applications weigh s cales low noise , op amp , front end current mirror and current sink/source low noise instrumentation amplifiers voltage controlled attenuators log amplifiers pin connection diagr am figure 1. general description the mat01 is a monolithic dua l npn transistor. an exclusive s ilicon nitride triple passivation process provides excellent stability of critical parameters over both temperature and time. matching characteristics include offset voltage of 40 v, temperature drift of 0.15 v/ c, and h fe matching of 0.7% . h igh h fe is provided over a six decade range o f collector current, including an exceptional h fe of 590 at a collector current of only 10 na. the high gain at low collector current makes the mat01 ideal for use in low power, low level input stag es. c 1 ma t01 t op view (not to scale) e 1 b 1 notes 1. substr a te is connected t o case. c 2 e 2 00282-001 b 2 1 3 6 4 2 5 rev. d document feedback information furnished by analog devices is believed to be accurate and reliable. however, no responsibility is assumed by an alog devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. specifications subject to change without notice. no license is granted by implication or otherwise under any patent or patent righ ts of analog devices. trademarks and registered trademarks are the property of their respective owners. one technology way, p.o. box 9106, norwood, ma 02062 - 9106, u.s.a. tel: 781.329.4700 ? 1973 C 2014 analog devices, inc. a ll rights reserved. technical support www.analog.com
mat01 data sheet table of contents features .............................................................................................. 1 applications ....................................................................................... 1 pin connection d iagram ................................................................ 1 general description ......................................................................... 1 revision history ............................................................................... 2 specifications ..................................................................................... 3 electrical characteristics ............................................................. 3 ab solute maximum ratings ............................................................ 5 esd caution ...................................................................................5 typical performance characteristics ..............................................6 test circuits ........................................................................................8 applications inf ormation .................................................................9 typical applications ....................................................................... 10 outline dimensions ....................................................................... 11 ordering guide .......................................................................... 11 revision history 9 /14 rev. c to rev. d changes to figure 4 and figure 7 ................................................... 6 4 /13 rev. b to rev. c updated format .................................................................. universal added applications section , deleted figure 2, renumbered sequentially ................................................................ 1 deleted table 3 , renumbered sequentially ................................... 4 changes to table 3 ............................................................................ 5 changes to typical performance characteristics section ........... 6 updated outline dimensions ....................................................... 11 changes to ordering guide .......................................................... 11 2 /0 2 rev. a to rev. b edits to features ................................................................................. 1 deleted wafer test limits ................................................................ 3 deleted dice characteristics .......................................................... 3 edits to table 5 ................................................................................... 7 rev. d | page 2 of 12
data sheet mat01 specifications electrical character istics v cb = 15 v, i c = 10 a, t a = 25c, unless otherwise noted. table 1 . parameter symbol test conditions /comments mat01ah mat01gh unit min typ max min typ min v o ltage breakdown voltage bv ceo i c = 100 a 45 45 v offset voltage v os 0.04 0.1 0.10 0.5 mv offset voltage stability first month 1 v os /time 2.0 2.0 v/mo long term 2 0.2 0.2 v/mo current offset current i os 0.1 0.6 0.2 3.2 na bias current i b 13 20 18 40 na current gain h fe i c = 10 na 590 430 i c = 10 a 500 770 250 560 i c = 10 ma 840 610 current gain match ?h fe i c = 10 a 0.7 3.0 1.0 8.0 % 100 na i c 10 ma 0.8 1.2 % noise low frequency noise voltage e n p -p 0.1 hz to 10 hz 3 0.23 0.4 0.23 0.4 v p -p broadband noise voltage e n rms 1 hz to 10 khz 0.60 0.60 v rms noise voltage density e n f o = 10 hz 3 7.0 9.0 7.0 9.0 nv/hz f o = 100 hz 3 6.1 7.6 6.1 7.6 nv/hz f o = 1000 hz 3 6.0 7.5 6.0 7.5 nv/hz offset voltage/current offset voltage change ?v os /?v cb 0 v cb 30 v 0.5 3.0 0.8 8.0 v/v offset current change ?i os /?v cb 0 v cb 30 v 2 15 3 70 pa/v leakage collector to base leakage current i cbo v cb = 30 v, i e = 0 4 15 50 25 200 pa collector to emitter leakage current i ces v ce = 30 v, v be = 0 4 , 5 50 200 90 400 pa collector to collector leakage current i cc v cc = 30 v 5 20 200 30 400 pa saturation collector saturation voltage v ce(sat) i b = 0.1 ma, i c = 1 ma 0.12 0.20 0.12 0.25 v i b = 1 ma, i c = 10 ma 0.8 0.8 v gain bandwidth product f t v ce = 10 v, i c = 10 ma 450 450 mhz capacitance output capacitance c ob v cb = 15 v, i e = 0 2.8 2.8 pf collector to collector capacitance c cc v cc = 0 8.5 8.5 pf 1 exclude first hour of operation to allow for stabilization. 2 parameter describes long - term average drift after first month of operation. 3 sample tested. 4 the collector to base (i cbo ) and collector to emitter (i ces ) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a potential that is lower than either collector voltage. 5 i cc and i ces are guaranteed by measurement of i cbo . rev. d | page 3 of 12
mat01 data sheet v cb = 15 v, i c = 10 a, ? 55 c t a +125c, unless otherwise noted. table 2 . parameter symbol test conditions /comments mat01ah mat01gh unit min typ max min typ min offset voltage/current offset voltage v os 0.06 0.15 0.14 0.70 mv average offset voltage drift 1 tcv os 0.15 0.50 0.35 1.8 v/c offset current i os 0.9 8.0 1.5 15.0 na average offset current drift 2 tci os 10 90 15 150 pa/c bias current 28 60 36 130 na current gain h fe 167 400 77 300 leakage current collector to base leakage current i cbo t a = 125c, v cb = 30 v, i e = 0 3 15 80 25 200 na collector to emitter leakage current i ces t a = 125c, v ce = 30 v, v be = 0 1 , 3 50 300 90 400 na collector to collector leakage current i cc t a = 125c, v cc = 30 v 1 30 200 50 400 n a 1 guaranteed by v os test ( ) for be v os v t os v os tcv << ? = 298 k for t a = 25 c. 2 guaranteed by i os test limits over temperature. 3 the collector to base (i cbo ) and collector to emitter (i ces ) leakage currents can be reduced by a factor of 2 to 10 times by connecting the substrate (package) to a potential that is lower than either collector voltage. rev. d | page 4 of 12
data sheet mat01 rev. d | page 5 of 12 absolute maximum ratings table 3. parameter 1 rating breakdown voltage of collector to base voltage (bv cbo ) 45 v collector to emitter voltage (bv ceo ) 45 v collector to collector voltage (bv cc ) 45 v emitter to emitter voltage (bv ee ) 45 v emitter to base voltage (bv ebo ) 2 5 v current collector (i c ) 25 ma emitter (i e ) 25 ma total power dissipation case temperature 40c 3 1.8 w ambient temperature 70c 4 500 mw temperature range operating ?55c to +125c junction ?55c to +150c storage ?65c to +150c lead temperature (soldering, 60 sec) 300c 1 absolute maximum ratings apply to packaged devices. 2 application of reverse bias voltages in excess of rating shown can result in degradation of h fe and h fe matching characteristic s. do not attempt to measure bv ebo greater than the 5 v rating. 3 rating applies to applications us ing heat sinking to control case temperature. derate linearity at 16. 4 mw/c for case temperatures above 40c. 4 rating applies to applications not using heat sinking; device in free air only. derate linearity at 6.3 mw/c for ambient temperatures above 70c. stresses above those listed under absolute maximum ratings may cause permanent damage to the device. this is a stress rating only; functional operation of the device at these or any other conditions above those indicated in the operational section of this specification is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. esd caution
mat01 data sheet typical performance characteristics figure 2. offset voltage vs. temperature figure 3. current gain vs. collector current figure 4. noise voltage density vs . frequency figure 5. offset voltage vs. time figure 6. current gain vs. temperature figure 7. noise current density v s. frequency 200 150 100 50 0 ?25 25 75 125 100 ?75 0 50 150 00282-002 offset voltage (v) temperature (c) ov < v cb < 30v mat01g mat01a 1000 800 600 200 0 1n 100n 10 1m 100m 10n 1 100 10m 00282-003 current gain ( h fe ) collector current (a) 400 t a = 25c v cb = 15v mat01a mat01g 1000 100 10 1 0.1 10 10k 1 100 10k 00282-004 noise voltage density (nv/hz) frequency (hz) t a = 25c i c = 10a worst case i c = 10a typical i c = 300a typical 10 4 ?2 ?8 ?10 1 4 8 12 10 0 2 6 13 00282-005 absolute change in offset voltage (v) time (months) 6 0 ?6 8 2 ?4 3 7 11 9 5 device a device b device c device d 1000 800 600 400 200 ?50 0 25 75 125 100 ?75 ?25 50 00282-006 current gain ( h fe ) temperature (c) ov < v cb < 30v (excludes i cbo ) 100na < i c < 25ma mat01g mat01a 100 10 1 0.1 0.1 10 1k 1 100 10k 00282-007 noise current density (pa/hz) frequency (hz) t a = 25c i c = 10a worst case i c = 10a typical i c = 300a typical rev. d | page 6 of 12
data sheet mat01 figure 8. collector current vs. base to emitter voltage figure 9. saturation voltage vs. collector current figure 10 . unity - gain bandwidth vs. collector current 10ma 1a 10na 100pa 10a 100a 1ma 100na 1na 10pa 100 300 500 700 600 0 200 400 800 00282-008 collector current (i c ) base to emitter voltage (mv) < 0.3mv < 0.1mv deviation from straight line < 0.3mv mat01 t a = 25c 100 10 1 0.1 0.01 0.01 1 100 0.1 10 00282-009 saturation voltage (v) collector current (ma) t a = +25c t a = +125c t a = ?55c i c = 10 i b mat01 1000 100 200 500 10 20 50 1 2 5 1a 100a 10ma 10a 1ma 100ma 00282-010 unity-gain bandwidth product (mhz) collector current (i c ) t a = 25c v ce = 10v mat01 rev. d | page 7 of 12
mat01 data sheet test circuits figure 11 . matching measurement circuit figure 12 . noise measurement circuit +16.5v 50k?* 50k?* test units 20k? op 1 177 100k? 1% 1m? 1m?* 100k? 1% ?15v v out s1 b s1 a s1 a s1 b v os v out1 closed closed i os v out2 ? v out1 1v per mv 1v per n a open open 100pf ma t01 100pf 50k?* v? 20 a *m a tched t o 0.01% +16.5v 00282-011 +15v 50k?* 50k?* test v 01 /2 2.5m? 4k? v 02 3.3k? low frequenc y noise noise densit y 4m? 4m? 100? 4.7f ?15v +15v s1 b s2 s3 b a s1 a s1 a s1 b v 01 /(2 4m?) open open closed a noise vo lt age densit y (per transis t or) noise current densit y (per transis t or) low frequenc y noise (referred t o input) closed closed closed a open b v 02 peak- t o-peak 25,000 closed closed 2pf m a t01 2pf 50k?* ?15v 20 a 720k? *m a tched t o 0.01% s2 s3** reading 00282-012 v 01 spectrum ana l yzer or quan-tech ic noise ana l yzer 2181/2283 ** a and b refer t o the throw position of the switch rev. d | page 8 of 12
data sheet mat01 applications information application of rever se bias voltages to the emitter to base junctions in excess of ratings (5 v) may result in degradation of h fe and h fe matching characteristics. c heck c ircuit designs to ensure that reverse bias voltages above 5 v cannot be applied during transient conditions , such as at circuit turn - on and turn - off. stray thermoelectric voltages generated by dissimilar metals at the contacts to the input terminals can pr event realization of th e predicted drift performance. maintain b oth input terminals at the same temperature, preferably close to the temperature of the device package. rev. d | page 9 of 12
mat01 data sheet typical applications figure 13 . precision reference figure 14 . basic digital thermometer readout in degrees kelvin (k) figure 15 . digital thermometer with readout in c r1 1.5k? 1m a v ref v ref 7.0v tcv ref 100ppm/c r o 40? notes 1. r1 m a y be adjusted t o minimize tcv ref . increasing r1 causes a positive change in tcv re f . 2. h fe of q1 is reduced b y oper a tion of breakdown mode. q1 q2 00282-013 sensing p air ma t01h c k e o ?55c = 218k = 2.18v +25c = 298k = 2.98v +125c = 398k = 3.98v differentia l amplifier and current sources e o = 10mv/k 3-digit dpm 0v t o +10v ful l scale up t o 100 feet cable +15v ?15v 00282-014 sensing p air ma t01h ?55c = ?0.55v +25c = +0.25v +125c = +1.25v differentia l amplifier and current sources e o = 10mv/k meter displ a ys e o ?2.73v high 2 1/2 digit dpm bipolar differentia l inputs low up t o 100f t . cable +15v ?15v 2.73v power supp l y + ? 00282-015 rev. d | page 10 of 12
data sheet mat01 rev. d | page 11 of 12 outline dimensions figure 16. 6-pin metal header package [to-78] (h-06) dimensions shown in inches and (millimeters) ordering guide model 1 v os maximum (t a = 25c) temperature range package description package option mat01ah 0.1 mv ?55c to +125c 6-pin metal header package [to-78] h-06 mat01ahz 0.1 mv ?55c to +125c 6-pin metal header package [to-78] h-06 mat01gh 0.5 mv ?55c to +125c 6-pin metal header package [to-78] h-06 mat01ghz 0.5 mv ?55c to +125c 6-pin metal header package [to-78] h-06 1 z = rohs compliant part. controlling dimensions are in inches; millimeter dimensions (in parentheses) are rounded-off inch equivalents for reference only and are not appropriate for use in design. 0.250 (6.35) min 0.750 (19.05) 0.500 (12.70) 0.185 (4.70) 0.165 (4.19) reference plane 0.050 (1.27) max 0.019 (0.48) 0.016 (0.41) 0.021 (0.53) 0.016 (0.41) 0.045 (1.14) 0.010 (0.25) 0.040 (1.02) max base & seating plane 0.335 (8.51) 0.305 (7.75) 0.370 (9.40) 0.335 (8.51) 0.034 (0.86) 0.027 (0.69) 0.160 (4.06) 0.110 (2.79) 0.100 (2.54) bsc 5 2 6 4 3 1 0.200 (5.08) bsc 0.100 (2.54) bsc 45 bsc 0.045 (1.14) 0.027 (0.69) 022306-a
mat01 data sheet rev. d | page 12 of 12 notes ?1973C2014 analog devices, inc. all ri ghts reserved. trademarks and registered trademarks are the prop erty of their respective owners. d00282-0-9/14(d)

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