st st st st n3456 n3456 n3456 n3456 n c hannel enhancement mode mosfet 6 . 0 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com st n 34 5 6 2008. v1 description description description description the st n3456 is the n -channel enhancement mode power field effect transistor which is produced using high cell density, dmos trench technology. this high density process is especially tailored to minimize on-state resistance . these devices are particularly suited for low voltage application, such as cellular phone and notebook computer power management and other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package. pin pin pin pin configuration configuration configuration configuration ts ts ts ts op- op- op- op- 6p 6p 6p 6p y: y: y: y: year year year year code code code code w: w: w: w: week week week week code code code code ordering ordering ordering ordering information information information information week code code : a ~ z ; a ~ z s t n3456 st6 r g st6 : tsop-6; r: tape reel ; g: pb C fre e part part part part number number number number package package package package part part part part marking marking marking marking s t n3456 st6rg t sop - 6 56 yw featur featur featur featur e e e e 3 0v/ 6 .0a, r ds(on) = 40 m @vgs= 10 v 3 0v/ 5.0 a, r ds(on) = 50 m @vgs= 4 .5v super high density cell design for extremely low r ds(on) exceptional an-resistance and maximum dc current capability tsop-6p package design
st st st st n3456 n3456 n3456 n3456 n c hannel enhancement mode mosfet 6 . 0 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com st n 34 5 6 2008. v1 absoulte absoulte absoulte absoulte maximum maximum maximum maximum ratings ratings ratings ratings (ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol typical typical typical typical unit unit unit unit drain-source voltage v dss 30 v gate-source voltage v gss 20 v continuous drain current (t j =150 ) t a =25 t a =70 i d 6.0 5.0 a pulsed drain current i dm 30 a continuous source current (diode conduction) i s 1.7 a power dissipation t a =25 p d 2.0 w t a =70 1.3 operation junction temperature t j 150 storage temperature range t stg -55/150 thermal resistance-junction to ambient r ja 90 /w
st st st st n3456 n3456 n3456 n3456 n c hannel enhancement mode mosfet 6 . 0 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com st n 34 5 6 2008. v1 electrical electrical electrical electrical characteristics characteristics characteristics characteristics ( ta = 25 unless otherwise noted ) parameter parameter parameter parameter symbol symbol symbol symbol condition condition condition condition min min min min typ typ typ typ max max max max unit unit unit unit static static static static drain-source breakdown voltage v (br)dss v gs =0v,i d = - 250 ua 30 v gate threshold voltage v gs(th) v ds =vgs,i d = - 250ua 1.0 3.0 v gate leakage current i gss v ds =0v,v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 24 v,v gs = 1. 0v 1 ua v ds = 24 v,v gs =0v t j = 5 5 10 on-state drain current i d(on) v ds Q - 5v,v gs = - 10 v 10 a drain-source on-resistance r ds(on) v gs = 10 v,i d = 6.0 a 0.0 30 0.0 4 0 v gs = 4.5 v,i d = 5.0a 0.0 40 0. 050 forward tran s conductance g fs v ds = 4.5 v,i d = 5.4 a 12 s diode forward voltage v sd i s = 1.7 a,v gs =0v 0.8 1.2 v dynamic dynamic dynamic dynamic total gate charge q g 10 18 nc gate-source charge q gs 1. 6 gate-drain charge q gd 3.2 input capacitance ciss v ds = 15 v,v gs = 0 , f = 1mhz 4 50 pf output capacitance coss 240 reverse transfer capacitance crss 38 turn-on time t d(on) v dd =15v, r l =15 , v gen =10 v r g = 6 7 15 ns t r 10 2 0 turn-off time t d(off) 20 40 t f 11 20 v ds = 15 v,v gs = 10 v, v d s =6.7a
st st st st n3456 n3456 n3456 n3456 n c hannel enhancement mode mosfet 6 . 0 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com st n 34 5 6 2008. v1 typical typical typical typical characterictics characterictics characterictics characterictics
st st st st n3456 n3456 n3456 n3456 n c hannel enhancement mode mosfet 6 . 0 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com st n 34 5 6 2008. v1 typical typical typical typical characterictics characterictics characterictics characterictics
st st st st n3456 n3456 n3456 n3456 n c hannel enhancement mode mosfet 6 . 0 a stanson technology 120 bentley square, mountain view, ca 94040 usa http://www.stansontech.com st n 34 5 6 2008. v1 t t t t sop-6 sop-6 sop-6 sop-6 package package package package outline outline outline outline
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