? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 1 gaas mmic voltage variable absorptive attenuator dc - 12 ghz rev. v4 MAAA2000G advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. features ?? single or dual bias control ?? easily cascadable ?? small size ?? attenuation flatness dc - 12 ghz 0.2 db ?? low control current consumption ?? low phase shift ?? up to 20 db matched attenuation with dual bias ?? rohs* compliant description the MAAA2000G is a broadband gaas mesfet mmic voltage variable absorptive attenuator. typical applications are for wl an ieee 802.11a+b/g, wimax ieee 802.16, and mimo. other applications include test equipment requiring ultra fast switching speed. the MAAA2000G is fabricated using a 1.0 micro gate length gaas mesfet process. the process features full chip passivation for increased performance and reliability. functional schematic ordering information part number package MAAA2000G die 1 electrical specificati ons: 0/-5 vdc, 50 ? , -55c to +85c parameter test conditions units min. typ. max. insertion loss 2 dc - 1.0 ghz dc - 2.0 ghz dc - 12.0 ghz db ? ? ? ? ? ? 1.2 1.4 1.5 vswr dc - 1.0 ghz dc - 2.0 ghz dc - 12.0 ghz ratio ? ? ? ? ? ? 1.5:1 1.5:1 1.8:1 relative attenuation (matched) (reflective) (matched) dc - 2.0 ghz dc - 2.0 ghz 2.0 - 12.0 ghz db 23 40 12 ? ? ? ? ? ? trise, tfall 10% to 90% rf, 90% to 10% rf ns ? 7 ? ton, toff 50% control to 90% rf, 50% control to 10% rf ns ? 10 ? transients in-band mv ? 20 ? input 1 db compression 0.5 - 4.0 ghz dbm ? 15 ? v in low 0 to -0.2 v a ? ? 9 v in high -5 v a ? 50 100 *restrictions on hazardous substances, european union directive 2002/95/ec. 1. die quantity varies. 2. loss changes 0.00025 db/c (-55c to +85c.)
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 2 gaas mmic voltage variable absorptive attenuator dc - 12 ghz rev. v4 MAAA2000G advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. typical performance curves @ 25c insertion loss isolation vswr attenuation @ 12 ghz attenuation @ 2 ghz absolute maximum ratings 3,4 parameter absolute maximum control voltage -8.5 v dc input rf power (500 mhz - 12 ghz) +34 dbm storage temperature -65c to +175c operating temperature +175c 3. exceeding any one or combination of these limits may cause permanent damage to this device. 4. m/a-com technology solutions does not recommend sustained operation near these survivability limits. 0.0 0.5 1.0 1.5 2.0 024681012 frequency (ghz) 5 15 25 35 45 55 024681012 frequency (ghz) 1.0 1.2 1.4 1.6 1.8 024681012 frequency (ghz) 0 10 20 30 40 50 -5 -4 -3 -2 -1 0 vb series va shunt matched attn. below 23.5 db gate voltage 0 2 4 6 8 10 12 14 -5 -4 -3 -2 -1 0 vb series va shunt gate voltage
? north america tel: 800.366.2266 / fax: 978.366.2266 ? europe tel: 44.1908.574.200 / fax: 44.1908.574.300 ? asia/pacific tel: 81.44.844.8296 / fax: 81.44.844.8298 visit www.macomtech.com for additi onal data sheets and prod uct information. m/a-com technology solutions inc. and its affiliates reserve the right to make changes to the product(s) or information contained herein without notice. 3 gaas mmic voltage variable absorptive attenuator dc - 12 ghz rev. v4 MAAA2000G advanced: data sheets contain information regarding a product m/a-com technology solutions is considering for development. performance is based on target specifications, simulated results, and/or prototype measurements. commitment to develop is not guaranteed. preliminary: data sheets contain information regarding a product m/a-com technology solutions has under development. performance is based on engineering tests. specifications are typical. mechanical outline has been fixed. engineering samples and/or test data may be available. commitment to produce in volume is not guaranteed. handling procedures permanent damage to the MAAA2000G may occur if the following precautions are not adhered to: a. cleanliness - the MAAA2000G should be handled in a cl ean environment. do not attempt to clean assembly after the MAAA2000G is installed. b. static sensitivity - all die handling equipment and personnel should be dc grounded. c. transients - avoid instrument and power supply tran sients while bias is connected to the MAAA2000G. use shielded signal and bias cables to minimize inductive pick-up. d. bias - apply voltage to either control port a1/b2 or a2/b1 only when the other is grounded. neither port should be allowed to ?float?. e. general handling - it is recommended that the ma aa2000g chip be handled along the long side of the die with a sharp pair of bend tweezers. do not touch the surface of the chip with fingers or tweezers. bonding a. ball or wedge bond with 1.0 mil diameter pure gold wire. thermosonic bonding with a nominal stage temperature of 150c and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. ultrasonic energy and time should be adjusted to the minimum levels necessary to achieve reliable wirebonds. b. wirebonds should be started on the chip and terminat ed on the package. gnd bonds should be as short as possible; at least three and no more than four bond wires from ground pads to package are recommended. mounting the MAAA2000G is back-metallized with pd/ni/au ( 100/1,000/10,000?) metallization. it can be die-mounted using au/sn eutectic preforms or a thermally conductive epoxy. the package surface should be clean and flat before attachment. eutectic die attach: a. an 80/20 au/sn preform is recommended with a wo rk surface temperature of approximately 255c and a tool temperature of 265c. when hot 90/5 nitrogen/hy drogen gas is applied, solder temperature should be approximately 290c. b. do not expose the MAAA2000G to a temperature gr eater than 320c for more than 20 seconds. no more than 3 seconds of scrubbing should be required for attachment. epoxy die attach: a. apply a minimum amount of epoxy and place the maaa 2000g into position. a thin epoxy fillet should be visible around the perimeter of the die. b. cure epoxy per manufacturer?s recommended schedule. c. electrically conductive epoxy is recommended but is not required.
|
