Part Number Hot Search : 
M81735FP MJ3001 IRHM7360 TDA4884 LM237K D2098 L9954XP PRESS
Product Description
Full Text Search
 

To Download TIP122 Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  inchange semiconductor product specification silicon npn darlington power transistors tip120/121/122 description ? with to-220c package ? darlington ?high dc current gain ? low collector saturation voltage ? complement to type tip125/126/127 applications ? designed for general?purpose amplifier and low?speed switching applications . pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ?? ) symbol parameter conditions value unit tip120 60 tip121 80 v cbo collector-base voltage TIP122 open emitter 100 v tip120 60 tip121 80 v ceo collector-emitter voltage TIP122 open base 100 v v ebo emitter-base voltage open collector 5 v i c collector current-dc 5 a i cm collector current-pulse 8 a i b base current-dc 120 ma t c =25 ?? 65 p c collector power dissipation t a =25 ?? 2 w t j junction temperature 150 ?? t stg storage temperature -65~150 ??
inchange semiconductor product specification 2 silicon npn darlington power transistors tip120/121/122 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit tip120 60 tip121 80 v ceo(sus) collector-emitter sustaining voltage TIP122 i c =0.1a, i b =0 100 v v cesat-1 collector-emitter saturation voltage i c =3a ,i b =12ma 2.0 v v cesat-2 collector-emitter saturation voltage i c =5a ,i b =20ma 4.0 v v be base-emitter on voltage i c =3.0a ; v ce =3v 2.5 v tip120 v cb =60v, i e =0 tip121 v cb =80v, i e =0 i cbo collector cut-off current TIP122 v cb =100v, i e =0 0.2 ma tip120 v ce =30v, i b =0 tip121 v ce =40v, i b =0 i ceo collector cut-off current TIP122 v ce =50v, i b =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 2 ma h fe-1 dc current gain i c =0.5a ; v ce =3v 1000 h fe-2 dc current gain i c =3.0a ; v ce =3v 1000 c ob output capacitance i e =0 ; v cb =10v,f=0.1mhz 200 pf
inchange semiconductor product specification 3 silicon npn darlington power transistors tip120/121/122 package outline fig.2 outline dimensions
inchange semiconductor product specification 4 silicon npn darlington power transistors tip120/121/122


▲Up To Search▲   

 
Price & Availability of TIP122

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X