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? semiconductor components industries, llc, 2012 november, 2012 ? rev. 2 1 publication order number: ncv8452/d ncv8452 self protected high side driver with temperature shutdown and current limit the ncv8452 is a fully protected high ? side driver that can be used to switch a wide variety of loads, such as bulbs, solenoids and other activators. the device is internally protected from an overload condition by an active current limit and thermal shutdown. features ? short circuit protection ? thermal shutdown with automatic restart ? cmos (3 v/5 v) compatible control input ? overvoltage protection and shutdown ? output voltage clamp for inductive switching ? under voltage shutdown ? loss of ground protection ? esd protection ? reverse battery protection (with external resistor) ? very low standby current ? ncv prefix for automotive and other applications requiring unique site and control change requirements; aec ? q100 qualified and ppap capable ? these are pb ? free devices typical applications ? switch a variety of resistive, inductive and capacitive loads ? can replace electromechanical relays and discrete circuits ? automotive / industrial product summary symbol characteristics value unit v ov overvoltage protection 41 v v d operation voltage 5 ? 34 v r on on ? state resistance 200 m i ilim output current limit 1.0 a http://onsemi.com marking diagram 1 ayw v8452 v8452 = device code a = assembly location y = year w = work week = pb ? free package (note: microdot may be in either location) sot ? 223 (to ? 261) case 318e see detailed ordering and shipping information in the package dimensions section on page 12 of this data sheet. ordering information
ncv8452 http://onsemi.com 2 control logic undervoltage shutdown regulated chargepump current limitation overtemperature shutdown gnd in out input buffer pre driver output clamping esd overvoltage protection overvoltage shutdown temperature sensor figure 1. block diagram (pin 2) (pin 3) (pin 1) v d (pin 4) package pin description pin # symbol description 1 out output 2 gnd ground 3 in logic level input 4 v d supply voltage v d gnd in v d v in i d i in out i gnd i out v out figure 2. voltage and current definition
ncv8452 http://onsemi.com 3 maximum ratings rating symbol value unit dc supply voltage v d 40 v peak transient input voltage (load dump 46 v, v d = 14 v, iso7637 ? 2 pulse5) (note 1) v peak 60 v input voltage v in ? 5 to v d v input current i in 5 ma output current i out internally limited a power dissipation @t a = 25 c (note 3) @t a = 25 c (note 4) p d 1.19 1.76 w electrostatic discharge (note 1) (hbm model 100 pf / 1500 ) input output v d 1 5 5 kv single pulse inductive load switch off energy (note 1) (l = 4.55 h, v d = 13.5 v; i l = 0.5 a, t jstart = 25 c) e as 0.8 j operating junction temperature t j ? 40 to +150 c storage temperature t storage ? 55 to +150 c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above t he recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may af fect device reliability. 1. not subjected to production testing 2. reverse output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. 3. minimum pad. 4. 1 in square pad size, fr ? 4, 1 oz cu. thermal resistance ratings parameter symbol max value unit thermal resistance (note 5) junction ? to ? lead junction ? to ? ambient (note 6) junction ? to ? ambient (note 7) r thjl r thja r thja 10 105 71 c/w c/w c/w 5. reverse output current has to be limited by the load to stay within absolute maximum ratings and thermal performance. 6. minimum pad. 7. 1 in square pad size, fr ? 4, 1 oz cu.
ncv8452 http://onsemi.com 4 electrical characteristics (v d = 13.5 v; ? 40 c < t j < 150 c unless otherwise specified) rating symbol conditions value unit min typ max operating supply voltage v d 5 ? 34 v undervoltage shutdown v uv 2.5 5.5 v undervoltage restart v uv(res) 6.0 v undervoltage hysteresis v uv(hyst) 0.3 overvoltage shutdown v ov 34 42 v overvoltage restart v ov(res) 33 on ? state resistance r on i out = 0.5 a, v in = 5 v, t j = 25 c i out = 0.5 a, v in = 5 v, t j = 150 c 160 ? 200 400 m standby current i d(off) v in = v out = 0 v 12 25 a active ground current i gnd(on) v in = 5 v 1 1.8 ma output leakage current i out(off) v in = 0 v 2 a input characteristics input voltage ? low v in(low) 0.8 v input voltage ? high v in(high) 2.2 v off state input current i in(off) v in = 0.7 v 10 a on state input current i in(on) v in = 5.0 v 10 a input threshold hysteresis v in(hyst) 0.3 v input resistance r i 1.5 2.8 3.5 k switching characteristics turn ? on time t on to 90% v out , r l = 24 60 120 s turn ? off time t off to 10% v out , r l = 24 60 120 s slew rate on dv out /dt on 10% to 30% v out , r l = 24 1 4 v / s slew rate off dv out /dt off 70% to 40% v out , r l = 24 1 4 v / s reverse battery (note 8) reverse battery ? v d requires a 150 resistor in gnd connection 32 v forward voltage v f t j = 150 c 0.6 v protection functions (note 9) temperature shutdown (note 8) tsd 150 175 200 c temperature shutdown hysteresis (note 8) tsd (hyst) 10 c overvoltage protection v ov i d = 4 ma 41 v switch off output clamp voltage v clamp i d = 4 ma, v in = 0 v v d ? 41 v d ? 47 v output current limit initial peak i lim v d = 20 v, t j = 25 c t j = ? 40 c to150 c 1.0 1.8 ? 3 a 8. not subjected to production testing 9. to ensure long term reliability under heavy overload or short circuit conditions, protection and related diagnostic signals m ust be used together with a proper hardware/software strategy. if the devices operates under abnormal conditions this hardware/software solutions mu st limit the duration and number of activation cycles.
ncv8452 http://onsemi.com 5 v d gnd in load out r gnd out v ss v dd v dd ncv8452 v bat micro controller figure 3. application diagram t v out 10% t 90% dv out /dt on 30% 10% 70% 40% dv out /dt off v in t on t off figure 4. resistive load switching waveform
ncv8452 http://onsemi.com 6 typical characteristic curves 20 0 i d(off) ( a) v d (v) figure 5. standby current vs. supply voltage ? 40 c 25 c 100 c 150 c 540 35 30 25 20 10 15 v in = v out = 0 v 16 12 8 4 0 18 16 14 12 10 8 6 4 2 0 ? 50 ? 25 0 175 150 125 25 50 100 75 v d = 5 v v d = 13.5 v v d = 35 v i d(off) ( a) t j ( c) figure 6. standby current vs. junction temperature v in = v out = 0 v 1.2 0 i out(off) ( a) v d (v) figure 7. output leakage current vs. supply voltage 540 35 30 25 20 10 15 v in = v out = 0 v 1 0.8 0.6 0.4 0.2 0 ? 40 c 25 c 100 c 150 c t j ( c) ? 50 ? 25 0 175 150 125 25 50 100 75 1.2 i out(off) ( a) 1 0.8 0.6 0.4 0.2 0 v in = v out = 0 v v d = 13.5 v v d = 35 v figure 8. output leakage current vs. junction temperature 100 0 i in ( a) v in (v) figure 9. input current vs. input voltage 214 12 10 8 46 v d = 13.5 v ? 40 c 25 c 100 c 150 c 6 ? 50 ? 25 0 175 150 125 25 50 100 75 5 4 3 2 1 0 t j ( c) figure 10. input current vs. junction temperature i in(off) , i in(on) ( a) i in(off) i in(on) v d = 13.5 v v in(off) = 0.7 v v in(on) = 5 v 90 80 70 60 50 40 30 20 10 0
ncv8452 http://onsemi.com 7 typical characteristic curves i gnd(on) (ma) v d (v) figure 11. active ground current vs. supply voltage 2.0 0 5 10 40 15 20 25 30 35 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 v in = 5 v ? 40 c 25 c 100 c 150 c i gnd(on) (ma) 2.0 1.8 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0 ? 50 ? 25 0 175 150 125 25 50 100 75 t j ( c) figure 12. active ground current vs. junction temperature v d = 5 v v d = 13.5 v v d = 35 v v in(th) (v) t j ( c) figure 13. input threshold voltage vs. junction temperature 2.5 2 1.5 1 0.5 0 ? 50 ? 25 0 175 150 125 25 50 100 75 turn on turn off ? 50 ? 25 0 175 150 125 25 50 100 75 0.3 0.25 0.2 0.15 0.1 0.05 0 v in(hyst) (v) t j ( c) figure 14. input threshold hysteresis vs. junction temperature v in = 5 v v d = 13.5 v 2 0 v in(th) (v) v d (v) figure 15. input threshold voltage vs. supply voltage 540 35 25 20 10 15 1.75 1.5 1.25 1 0.75 0.5 0.25 0 30 turn on turn off
ncv8452 http://onsemi.com 8 typical characteristic curves ? 50 ? 25 0 175 150 125 25 50 100 75 5 v uv , v uv(res) (v) t j ( c) figure 16. under voltage shutdown and restart vs. junction temperature 4.5 4 3.5 3 2.5 2 1.5 1 0.5 0 v in = 5 v v uv(res) v uv ? 50 ? 25 0 175 150 125 25 50 100 75 0.35 0.3 0.25 0.2 0.15 0.1 0.05 0 v uv(hyst) (v) t j ( c) figure 17. under voltage shutdown hysteresis vs. junction temperature v in = 5 v ? 50 ? 25 0 175 150 125 25 50 100 75 45 v ov , v ov(res) (v) t j ( c) figure 18. over voltage shutdown vs. junction temperature 40 35 30 25 20 15 10 5 0 v in = 5 v v ov(res) v ov ? 50 ? 25 0 175 150 125 25 50 100 75 1 v ov(hyst) (v) t j ( c) figure 19. over voltage shutdown hysteresis vs. junction temperature 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0 v in = 5 v 50 v clamp (v) v d (v) figure 20. output clamp voltage vs. supply voltage 0 5 10 40 15 20 25 30 35 25 c 100 c 150 c ? 40 c v in = 0 v i d = 4 ma ? 50 ? 25 0 175 150 125 25 50 100 75 50 v clamp (v) t j ( c) figure 21. output clamp voltage vs. junction temperature 48 46 44 42 40 v in = 0 v i d = 4 ma v d = 5 v v d = 13.5 v v d = 35 v 48 46 44 42 40
ncv8452 http://onsemi.com 9 typical characteristic curves 450 r on (m ) v d (v) figure 22. on ? state resistance vs. supply voltage 0 5 10 40 15 20 25 30 35 25 c 100 c 150 c ? 40 c v in = 5 v i out = 0.5 a 400 350 300 250 200 150 100 50 0 ? 50 ? 25 0 175 150 125 25 50 100 75 350 r on (m ) t j ( c) figure 23. on ? state resistance vs. junction temperature 300 250 200 150 100 50 0 r on (m ) output current (a) figure 24. on ? state resistance vs. output current 0 350 300 250 200 150 100 50 0 1.75 1.5 1.25 1 0.75 0.5 0.25 0 5 10 40 15 20 25 30 35 v d (v) figure 25. current limit vs. supply voltage 3.0 i lim (a) v in = 5 v v d = 13.5 v i out = 0.5 a 25 c 100 c 150 c ? 40 c v in = 5 v v d = 13.5 v v in = 5 v v out = 0 v ? 40 c 25 c 100 c 150 c 2.5 2.0 1.5 1.0 0.5 0 i lim (a) t j ( c) figure 26. current limit vs. junction temperature 3.0 2.5 2.0 1.5 1.0 0.5 0 ? 50 ? 25 0 175 150 125 25 50 100 75 v in = 5 v v out = 0 v v d = 5 v v d = 13.5 v v d = 35 v 0 5 10 40 15 20 25 30 35 v d (v) figure 27. turn ? on time vs. supply voltage 140 t on ( s) 120 100 80 60 40 20 0 r l = 24 150 c 100 c ? 40 c 25 c
ncv8452 http://onsemi.com 10 typical characteristic curves 0 5 10 40 15 20 25 30 35 v d (v) figure 28. turn ? off time vs. supply voltage 80 t off ( s) 70 60 50 40 30 20 10 0 r l = 24 150 c 100 c ? 40 c 25 c 0 5 10 40 15 20 25 30 35 v d (v) figure 29. slew rate on vs. supply voltage 1.6 dv out / dt on (v/ s) r l = 24 25 c ? 40 c 100 c 150 c 1.4 1.2 1 0.8 0.6 0.4 0.2 0 0 5 10 40 15 20 25 30 35 v d (v) figure 30. slew rate off vs. supply voltage 3 ? dv out / dt off (v/ s) r l = 24 25 c 100 c 150 c ? 40 c ? 50 ? 25 0 175 150 125 25 50 100 75 t j ( c) figure 31. turn ? on vs. junction temperature 140 t on ( s) v d = 13.5 v v d = 5 v v d = 35 v r l = 24 120 100 80 60 40 20 0 ? 50 ? 25 0 175 150 125 25 50 100 75 t j ( c) figure 32. turn ? off time vs. junction temperature 80 t off ( s) 70 60 50 40 30 20 10 0 r l = 24 v d = 5 v v d = 13.5 v v d = 35 v t j ( c) figure 33. slew rate on vs. junction temperature 1.6 dv out / dt on (v/ s) 1.4 1.2 1 0.8 0.6 0.4 0.2 0 ? 50 ? 25 0 175 150 125 25 50 100 75 r l = 24 v d = 35 v v d = 5 v v d = 13.5 v 2.5 2 1.5 1 0.5 0
ncv8452 http://onsemi.com 11 typical characteristic curves 3 ? dv out / dt off (v/ s) ? 50 ? 25 0 175 150 125 25 50 100 75 t j ( c) figure 34. slew rate off vs. junction temperature 2.5 2 1.5 1 0.5 0 r l = 24 v d = 35 v v d = 13.5 v v d = 5 v 1.0 ? i gnd (a) 0 0.2 1.2 1.0 0.4 0.8 0.6 ? v d (v) figure 35. supply ? to ? ground reverse characteristics 0.8 0.6 0.4 0.2 0 25 c 100 c 150 c ? 40 c 5.0 ? i out (a) 0 0.2 1.2 1.0 0.4 0.8 0.6 v out ? v d (v) figure 36. power fet body forward characteristics 4.5 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0 ? 40 c 25 c 100 c 150 c i l (a) 10 10000 100 1000 l (mh) figure 37. single pulse maximum switch off current vs. load inductance 10 1 0.1 v d = 13.5 v, r l = 0 tj start = 25 c tj start = 150 c e as (mj) 10 10000 100 1000 l (mh) figure 38. single pulse maximum switch off energy vs. load inductance 1000 v d = 13.5 v, r l = 0 tj start = 25 c tj start = 150 c 100 10 1 1 shutdown time (ms) 25 40 30 35 v d (v) figure 39. initial short ? circuit shutdown time vs. supply voltage 1000 0 100 10 1 0.1 5101520 tj start = 25 c tj start = 150 c tj start = 100 c tj start = ? 40 c r l = 0 no heatsink attached
ncv8452 http://onsemi.com 12 shutdown time (ms) 75 175 125 150 t jstart ( c) figure 40. initial short ? circuit shutdown time vs. starting junction temperature 1000 ? 50 100 10 1 0.1 ? 25 0 25 50 v d = 13.5 v r l = 0 no heatsink attached v d = 24 v v d = 34 v 100 140 r thja ( c/w) 0 200 700 600 300 500 400 copper heat spreader area (mm 2 ) figure 41. junction ? to ? ambient thermal resistance vs. copper area 120 100 80 60 40 20 0 100 1.0 oz 2.0 oz figure 42. junction ? to ? ambient transient thermal impedance (minimum pad size) pulse time (sec) z (t)ja ( c/w) 0.1 duty cycle = 0.5 0.2 0.05 0.02 0.01 single pulse 1000 100 10 1 0.1 0.01 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 ordering information device package shipping ? ncv8452stt1g sot ? 223 (pb ? free) 1000 / tape & reel NCV8452STT3G sot ? 223 (pb ? free) 4000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
ncv8452 http://onsemi.com 13 package dimensions sot ? 223 (to ? 261) case 318e ? 04 issue n a1 b1 d e b e e1 4 123 0.08 (0003) a l1 c notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: inch. 1.5 0.059 mm inches scale 6:1 3.8 0.15 2.0 0.079 6.3 0.248 2.3 0.091 2.3 0.091 2.0 0.079 soldering footprint* h e dim a min nom max min millimeters 1.50 1.63 1.75 0.060 inches a1 0.02 0.06 0.10 0.001 b 0.60 0.75 0.89 0.024 b1 2.90 3.06 3.20 0.115 c 0.24 0.29 0.35 0.009 d 6.30 6.50 6.70 0.249 e 3.30 3.50 3.70 0.130 e 2.20 2.30 2.40 0.087 0.85 0.94 1.05 0.033 0.064 0.068 0.002 0.004 0.030 0.035 0.121 0.126 0.012 0.014 0.256 0.263 0.138 0.145 0.091 0.094 0.037 0.041 nom max l1 1.50 1.75 2.00 0.060 6.70 7.00 7.30 0.264 0.069 0.078 0.276 0.287 h e ? ? e1 0 1 0 0 1 0 l l 0.20 ??? ??? 0.008 ??? ??? *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. on semiconductor and are registered trademarks of semiconductor co mponents industries, llc (scillc). scillc owns the rights to a numb er of patents, trademarks, copyrights, trade secrets, and other intellectual property. a list ing of scillc?s product/patent coverage may be accessed at ww w.onsemi.com/site/pdf/patent ? marking.pdf. scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and s pecifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/ or specifications can and do vary in different applications and actual performance may vary over time. all operating parame ters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or a uthorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in whic h the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or us e scillc products for any such unintended or unauthorized appli cation, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unin tended or unauthorized use, even if such claim alleges that scil lc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyrig ht laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 ncv8452/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative

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