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| to-92 plastic-encapsulate transistors 2SA1980 transistor ( pnp ) features z low collector saturation voltage: v ce(sat) =-0.3v(max.) z low output capacitance : c ob =4pf (typ.) z complementary pair with 2sc5343 maximum ratings (t a =25 unless otherwise noted) symbol parameter value unit v cbo collector-base voltage -50 v v ceo collector-emitter voltage -50 v v ebo emitter-base voltage -5 v i c collector current -continuous -150 ma p c collector power dissipation 625 mw t j junction temperature 150 t stg storage temperature -55-150 electrical characteristics (t a =25 unless otherwise specified) parameter symbol test conditions m in t yp m ax u nit collector-base breakdown voltage v (br)cbo i c =-100 a,i e =0 -50 v collector-emitter breakdown voltage v (br)ceo i c =-10ma,i b =0 -50 v emitter-base breakdown voltage v (br)ebo i e =-10 a,i c =0 -5 v collector cut-off current i cbo v cb =-50v,i e =0 -0.1 a collector cut-off current i ceo v eb =-5v,i c =0 -0.1 a dc current gain h fe v ce =-6v,i c =-2ma 70 700 collector-emitter saturation voltage v ce(sat) i c =-100ma,i b =-10ma -0.3 v transition frequency f t v ce =-10v,i c =-1ma 80 mhz collector output capacitance c ob v cb =-10v,i e =0,f=1mhz 4 7 pf noise figure nf v ce =-6v,i c =-0.1ma,f=1kh z ,r s =10k ? 10 db classification of h fe rank o y g l range 70-140 120-240 200-400 300-700 to-92 1. emitter 2. collector 3. base 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification a,may,2011
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