? silikron semiconductor c orporation 2008.8. 1 version: 1 . 1 page 1 of 5 ssf 6808 a absolute maximum ratings parameter max. units i d @t c = 25 ? c continuous d rain c urrent,vgs@10v 84 a i d @t c = 1 0 0 ? c continuous d rain c urrent,vgs@10v 76 i dm pulsed d rain c urrent 310 p d @t c = 2 5 ? c power d issipation 1 8 0 w linear d erating f actor 1.5 w / ? c v gs gate - to - source v oltage 20 v dv/dt p eak diode recovery voltage 31 v/ns e as single p ulse a valanche e nergy 4 0 0 mj e ar repetitive avalanche energy tbd t j t stg operating junction and storage temperature range C 5 5 to +1 7 5 ? c thermal resistance parameter min. typ. max. units r jc junction - to - case 0.83 ? c/w r ja junction - to - a mbient 62 electrical characteristics @tj=25 ? c ( unless otherwise specified) parameter min. typ. max. units test conditions bv dss drain - to - source b reakdown v oltage 68 v v gs =0v,i d =250a r ds(on) static drain - to - source o n - resistance 5 8 m v gs =10v,i d = 30 a v gs(th) gate t hreshold v oltage 2.0 4.0 v v ds =v gs ,i d =250a i dss drain - to - source l eakage current 2 a v d s = 68 v ,v gs =0v 1 0 v ds = 68 v , v gs =0v,t j =1 5 0 ? c ssf 6808 a top view (to - 263 ) id = 84 a bv= 68 v rdson= 8 mohm feathers: ? advanced trench process technology ? u ltra low rdson , typical 5 mohm ? h igh a valanche e nergy , 100% test ? fully characterized a valanche voltage and current description: the ssf 6808 a is a new generatio n of middle voltage and high current n C channel enhancement mode trench power mosfet. this new technology increases the device reliability and electrical parameter repeatability . ssf 6808 a is assembled in high reliability and quali fied assembly house . applic ation: ? p ower switching application
? silikron semiconductor c orporation 2008.8. 1 version: 1 . 1 page 2 of 5 ssf 6808 a i gss gate - to - source f orward leakage 100 na v gs =20v gate - to - source r everse leakage - 100 v gs = - 20v q g total g ate c harge 90 nc i d =30a v dd =30v v gs =10v q gs gate - to - source charge 1 8 q gd gate - to - drain("miller") charge 2 8 t d(on) turn - on d elay t ime 18.2 ns v dd =30v i d =2a ,r l =15 r g =2.5 v gs =10v t r rise t ime 15.6 t d(off) turn - off d elay t ime 70.5 t f fall t ime 13.8 c iss input c apacitance 3150 pf v gs =0v v ds =25v f=1.0mhz c oss output c apacitance 300 c rss reverse t ransfer c apacitance 240 source - drain ratings and characteristics pa rameter min. typ. max. units test conditions i s continuous source current (body diode) 84 a mosfet symbol showing the integral reverse p - n junction diode. i sm pulsed source current (body diode) 310 v sd diode forward voltage 1. 3 v t j = 2 5 ? c,i s = 6 8 a,v gs =0v t rr reverse recovery time 57 ns t j = 2 5 ? c,i f = 68 a di/dt=100a/s q rr reverse recovery charge 107 nc t on forward turn - on time intrinsic turn - on time is negligible (turn - on is dominated by ls + ld) gate charge t est c ircuit: eas test c ircuit: notes: repetitive rating; pu lse width limited by m ax junction temperature. t est condition: l =0. 3 mh, id = 37 a, vdd = 30 v pulse width300s , duty cycle1.5% ; rg = 25 ?? starting tj = 25c v d d r l r g 1 m a v g s v d d b v d s s l r g
? silikron semiconductor c orporation 2008.8. 1 version: 1 . 1 page 3 of 5 ssf 6808 a figure1: transfer characteristic figure2: cap ac i tance figure3: on resistance vs. junction temperature figure4: breakdown voltage vs. junction temperature switch waveforms: switch time test circuit
? silikron semiconductor c orporation 2008.8. 1 version: 1 . 1 page 4 of 5 ssf 6808 a figure5: gate charge figure6: source - drain diode forward voltage figure7: safe operation area figure8: max drain c urrent vs. junction temperature fi gure9: transient thermal impedance curve
? silikron semiconductor c orporation 2008.8. 1 version: 1 . 1 page 5 of 5 ssf 6808 a to - 2 63 mechanical data:
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