s dio de ? outline drawing maximum ratings approx net weight:016g rating symbol NSD03A40 unit repetitive peak reverse voltage v rrm 400 v 1.57 ta=25 c *1 average rectified output current i o 3.0 t1=108 c *2 50hz half sine wave resistive load a rms forward current i f(rms) 4.71 a surge forward current i fsm 80 50hz half sine wave,1cycle non-repetitive a operating junctiontemperature range t jw -40 to +150 c storage temperature range t stg -40 to +150 c electrical ? thermal characteristics characteristics symbol conditions min. typ. max. unit peak reverse current i rm tj= 25 c, v rm = v rrm - - 50 a peak forward voltage v fm tj= 25 c, i fm = 3.0a - - 1.0 v rth (j-a) junction to ambient *1 - - 89 thermal resistance rth (j-l) junction to lead - - 13 c /w *1 glass epoxy substrate mounted (soldering lands=2x2mm,both sides) *2 tl= lead temperature ? diode type : NSD03A40 NSD03A40 NSD03A40 NSD03A40 features features features features * flat-pak surface mount device * high surge capability * low forward voltage drop * low reverse leakage current * packaged in 16mm tape and reel * not rolling during assembly ? l inear h all-e ffect ic mosfets s m d ty p e dio de s
? NSD03A40 outline drawing (dimensions in mm) s dio de l inear h all-e ffect ic mosfets s m d ty p e dio de s
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