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BFX85 features ? high current (max. 1 a) ? low voltage (max. 60 v). applications ? general purpose switching and amplification ? industrial applications. description npn transistor in a to-39 metal package. pinning pin 1 2 3 description emitter base collector, connected to case fig.1 simplified outline (to-39) and symbol. quick reference data symbol vcbo vceo ic ptot hfe fr toff parameter collector-base voltage collector-emitter voltage collector current (dc) total power dissipation dc current gain transition frequency turn-off time conditions open emitter open base tamb<;25*c tease 51 00 c lc=150ma;vce = 10v lc = 50 ma; vce = 10 v; f = 100 mhz icon = 150 ma; !bon = 15 ma; la* = -15 ma min. ? - - - - 70 50 - typ. - - - - - 142 - 360 max. 100 60 1 800 2.86 - - - unit v v a mw w mhz ns limiting values in accordance with the absolute maximum rating system (iec 134). symbol vcbo vceo vebo >c icm ibm ptot tstg tj tamb parameter collector-base voltage collector-emitter voltage emitter-base voltage collector current (dc) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature conditions open emitter open base open collector tamb $ 25 cc tcase 5 25 3c 25cstcase^1000c min. - - - - - - _ - - -65 - -65 max. 100 60 6 1 1 100 800 5 2.86 +150 175 +150 unit v v v a a ma mw w w c "c ?c thermal characteristics symbol p-thha rthj-c parameter thermal resistance from junction to ambient thermal resistance from junction to case conditions in free air value 200 35 unit km/ k/w quality semi-conductors
npn switching transistor BFX85 characteristics tj = 25 ' c unless otherwise specified. symbol icbo !ebo hfe vcesat veesat co fr parameter collector cut-off current emitter cut-off current dc current gain collector-emitter saturation voltage base-emitter saturation voltage collector capacitance transition frequency conditions ie = 0; vcb = 80 v |e = 0; vcb = 80v;tj = 100 >c ie = 0; vcb = 100v |e = 0; vcb= 100v;tj = 100c lc = 0; veb = 5 v lc = 0;veb = 5v;tj=100c lc = 0; veb = 6 v lc= 10ma; vce = 10v lc=150ma;vce=10v lc = 500ma;vce=10v lc=1 a;vce=10v ig = 1 0 ma; ib = 1 ma lc= 150 ma; ib = 15 ma lc = 500 ma; ib = 50 ma lc=1 a; ib = 100ma \= 10 ma; ib = 1 ma lc = 150ma; ib = 15ma lc = 500 ma; ib = 50 ma lc=1 a; ib = 100ma |e = ie = 0; vcb = 10v;f=1 mhz lc = 50 ma; vce = 10 v; f = 100 mhz min. - - - - - - - 50 70 30 15 - - - - - - - - - 50 switching times (between 10% and 90% levels) see fig. 2 ton td tr toff ts tf turn-on time delay time rise time turn-off time storage time fall time icon = 150 ma; leon = 15 ma; lboff = -15ma - - - - - - typ. 2 0.1 10 0.5 2 0.1 10 90 142 90 50 150 150 0.35 0.66 0.69 0.92 1.15 1.4 7 185 max. 50 2.5 500 30 50 2.5 500 - _ - - 200 350 1 1.6 1.2 1.3 1.5 2 12 - unit na ha na ha na ma na mv mv v v v v v v pf mhz 55 15 40 360 300 60 - - - - - - ns ns ns ns ns ns

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