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www.irf.com 1 5/5/06 directfet power mosfet description the IRF6637PBF combines the latest hexfet? power mosfet silicon technology with advanced directfet tm packaging to achieve the lowest on-state resistance in a package that has the footprint of a so-8 and only 0.7 mm profile. the directfet package is com patible with existing layout geometries used in power applications, pcb assembly equipment and vapor phase, infra-red or convection solderin g tech- niques, when application note an-1035 is followed regarding the manufacturing methods and processes. the directfet package allo ws dual sided cooling to maximize thermal transfer in power systems, improving previous best thermal resistance by 80%. the IRF6637PBF balances both low resistance and low charge along with ultra low package inductance to reduce both conduction an d switching losses. the reduced total losses make this product ideal for high efficiency dc-dc converters that power the latest g eneration of processors operating at higher frequencies. the IRF6637PBF has been optimized for parameters that are critical in synchronous buck operating from 12 volt bus converters including r ds(on) and gate charge to minimize losses in the control fet socke t. applicable directfet outline and substrate outline (see p.7,8 for details) fig 1. typical on-resistance vs. gate voltage fig 2. typical total gate charge vs gate-to-source voltage click on this section to link to the appropriate technical paper. click on this section to link to the directfet website. surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple mounted to top (drain) of part. repetitive rating; pulse width limited by max. junction temperature. starting t j = 25c, l = 0.52mh, r g = 25 ? , i as = 11a. 0 4 8 12162024 q g total gate charge (nc) 0 2 4 6 8 10 12 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v vds= 15v i d = 11a directfet isometric sq sx st mq mx mt mp v dss v gs r ds(on) r ds(on) 30v max 20v max 5.7m ? @ 10v 8.2m ? @ 4.5v q g tot q gd q gs2 q rr q oss v gs(th) 11nc 4.0nc 1.0nc 20nc 9.9nc 1.8v 2.0 4.0 6.0 8.0 10.0 v gs , gate-to-source voltage (v) 5 10 15 20 25 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c t j = 125c i d = 14a rohs compliant lead-free (qualified up to 260c reflow) application specific mosfets ideal for cpu core dc-dc converters low conduction losses and switching losses low profile (<0.7mm) dual sided cooling compatible compatible with existing surface mount techniques IRF6637PBF irf6637trpbf absolute maximum ratin g s parameter units v ds drain-to-source voltage v v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v a i d @ t c = 25c continuous drain current, v gs @ 10v i dm pulsed drain current e as single pulse avalanche energy mj i ar avalanche current a max. 11 59 110 20 30 14 31 11 2 www.irf.com repetitive rating; pulse width limited by max. junction temperature. pulse width 400s; duty cycle 2%. static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / ? t j breakdown voltage temp. coefficient ??? 26 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 5.7 7.7 m ? ??? 8.2 10.8 v gs(th) gate threshold voltage 1.35 1.8 2.35 v ? v gs(th) / ? t j gate threshold voltage coefficient ??? -5.4 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 a ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 na gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 38 ??? ??? s q g total gate charge ??? 11 17 q gs1 pre-vth gate-to-source charge ??? 3.1 ??? q gs2 post-vth gate-to-source charge ??? 1.0 ??? nc q gd gate-to-drain charge ??? 4.0 6.0 q godr gate charge overdrive ??? 2.9 ??? see fig. 15 q sw switch charge (q gs2 + q gd ) ??? 5.0 ??? q oss output charge ??? 9.9 ??? nc r g gate resistance ??? 1.2 ??? ? t d(on) turn-on delay time ??? 12 ??? t r rise time ??? 15 ??? t d(off) turn-off delay time ??? 14 ??? ns t f fall time ??? 3.8 ??? c iss input capacitance ??? 1330 ??? c oss output capacitance ??? 430 ??? pf c rss reverse transfer capacitance ??? 150 ??? diode characteristics parameter min. typ. max. units i s continuous source current ??? ??? 53 (body diode) a i sm pulsed source current ??? ??? 110 (body diode) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 13 20 ns q rr reverse recovery charge ??? 20 30 nc mosfet symbol clamped inductive load v ds = 15v, i d = 11a conditions ? = 1.0mhz v ds = 16v, v gs = 0v v gs = 20v v gs = -20v v ds = 24v, v gs = 0v v ds = 15v v ds = 24v, v gs = 0v, t j = 125c conditions v gs = 0v, i d = 250a reference to 25c, i d = 1ma v gs = 10v, i d = 14a v gs = 4.5v, i d = 11a v ds = v gs , i d = 250a t j = 25c, i f = 11a v gs = 4.5v i d = 11a v gs = 0v v ds = 15v i d = 11a v dd = 16v, v gs = 4.5v di/dt = 500a/s t j = 25c, i s = 11a, v gs = 0v showing the integral reverse p-n junction diode. www.irf.com 3 fig 3. maximum effective transient thermal impedance, junction-to-ambient surface mounted on 1 in. square cu board, steady state. t c measured with thermocouple incontact with top (drain) of part. used double sided cooling, mounting pad with large heatsink. mounted on minimum footprint full size board with metalized back and with small clip heatsink. r is measured at surface mounted on 1 in. square cu board (still air). 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 10 100 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j a ) 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthja + tc ri (c/w) i (sec) 0.6676 0.000066 1.0462 0.000896 1.5611 0.004386 29.282 0.68618 25.455 32 j j 1 1 2 2 3 3 r 1 r 1 r 2 r 2 r 3 r 3 ci= i / ri ci= i / ri c 4 4 r 4 r 4 5 5 r 5 r 5 with small clip heatsink (still air) mounted on minimum footprint full size board with metalized back and with small clip heatsink (still air) absolute maximum ratin g s parameter units p d @t a = 25c power dissipation w p d @t a = 70c power dissipation p d @t c = 25c power dissipation t p peak soldering temperature c t j operating junction and t stg storage temperature range thermal resistance parameter typ. max. units r ja junction-to-ambient ??? 55 r ja junction-to-ambient 12.5 ??? r ja junction-to-ambient 20 ??? c/w r jc junction-to-case ??? 3.0 r j-pcb junction-to-pcb mounted 1.0 ??? linear derating factor w/c 1.5 0.018 270 -40 to + 150 max. 42 2.3 4 www.irf.com fig 5. typical output characteristics fig 4. typical output characteristics fig 6. typical transfer characteristics fig 7. normalized on-resistance vs. temperature fig 8. typical capacitance vs.drain-to-source voltage fig 9. typical on-resistance vs. drain current and gate voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 25c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 5.0v 4.5v 4.0v 3.5v 3.0v 2.8v bottom 2.5v 60s pulse width tj = 150c 2.5v 1 10 100 v ds , drain-to-source voltage (v) 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.5 1.0 1.5 2.0 t y p i c a l r d s ( o n ) ( n o r m a l i z e d ) i d = 14a v gs = 10v vgs = 4.5v 0 20 40 60 80 100 i d , drain current (a) 4 8 12 16 20 t y p i c a l r d s ( o n ) ( m ? ) t j = 25c vgs = 3.5v vgs = 4.0v vgs = 4.5v vgs = 5.0v vgs = 10v 1.5 2.0 2.5 3.0 3.5 4.0 v gs , gate-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 150c t j = 25c t j = -40c v ds = 15v 60s pulse width www.irf.com 5 fig 13. typical threshold voltage vs. junction temperature fig 12. maximum drain current vs. case temperature fig 10. typical source-drain diode forward voltage fig11. maximum safe operating area fig 14. maximum avalanche energy vs. drain current 0.2 0.4 0.6 0.8 1.0 1.2 v sd , source-to-drain voltage (v) 0.1 1.0 10.0 100.0 1000.0 i sd , reverse drain current (a) v gs = 0v t j = 150c t j = 25c t j = -40c 25 50 75 100 125 150 starting t j , junction temperature (c) 0 40 80 120 160 e a s , s i n g l e p u l s e a v a l a n c h e e n e r g y ( m j ) i d top 4.9a 7.5a bottom 11a 25 50 75 100 125 150 t c , case temperature (c) 0 10 20 30 40 50 60 i d , d r a i n c u r r e n t ( a ) 0.10 1.00 10.00 100.00 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t a = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100sec -75 -50 -25 0 25 50 75 100 125 150 t j , junction temperature ( c ) 1.0 1.5 2.0 2.5 t y p i c a l v g s ( t h ) g a t e t h r e s h o l d v o l t a g e ( v ) i d = 250a 6 www.irf.com fig 15a. gate charge test circuit fig 15b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr fig 16b. unclamped inductive waveforms t p v (br)dss i as fig 16a. unclamped inductive test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 17a. switching time test circuit v gs pulse width < 1s duty factor < 0.1% v dd v ds l d d.u.t + - r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v 1k vcc dut 0 l www.irf.com 7 directfet substrate and pcb layout, mp outline (medium size can, p-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. fig 18. for n-channel hexfet power mosfets p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period ? ? ? ? ? !"#"" ? $ %% ? "#""& # + - + + + - - - g = gate d= drain s = source g s s d dd d 8 www.irf.com directfet outline dimension, mp outline (medium size can, p-designation). please see directfet application note an-1035 for all details regarding the assembly of directfet. this includes all recommendations for stencil and substrate designs. directfet part marking code a b c d e f g h j k l m r p imperial max 6.35 5.05 3.95 0.45 0.62 0.62 0.79 0.57 0.67 1.72 3.04 0.676 0.080 0.17 min 6.25 4.80 3.85 0.35 0.58 0.58 0.75 0.53 0.63 1.59 2.87 0.616 0.020 0.08 metric dimensions max 0.250 0.199 0.156 0.018 0.032 0.032 0.031 0.022 0.026 0.068 0.119 0.0274 0.0031 0.007 max 0.246 1.889 0.152 0.014 0.023 0.023 0.030 0.021 0.025 0.063 0.113 0.0235 0.0008 0.003 www.irf.com 9 data and specifications subject to change without notice. this product has been designed and qualified for the consumer market. qualification standards can be found on ir?s web site. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 5/06 directfet tape & reel dimension (showing component orientation). reel dimensions note: controlling dimensions in mm std reel quantity is 4800 parts. (ordered as irf6637trpbf). for 1000 parts on 7" reel, order irf6637tr1pbf standard option (qty 4800) min 330.0 20.2 12.8 1.5 100.0 n.c 12.4 11.9 code a b c d e f g h max n.c n.c 13.2 n.c n.c 18.4 14.4 15.4 min 12.992 0.795 0.504 0.059 3.937 n.c 0.488 0.469 max n.c n.c 0.520 n.c n.c 0.724 0.567 0.606 metric imperial tr1 option (qty 1000) imperial min 6.9 0.75 0.53 0.059 2.31 n.c 0.47 0.47 max n.c n.c 12.8 n.c n.c 13.50 12.01 12.01 min 177.77 19.06 13.5 1.5 58.72 n.c 11.9 11.9 metric max n.c n.c 0.50 n.c n.c 0.53 n.c n.c loaded tape feed direction min 7.90 3.90 11.90 5.45 5.10 6.50 1.50 1.50 code a b c d e f g h max 8.10 4.10 12.30 5.55 5.30 6.70 n.c 1.60 min 0.311 0.154 0.469 0.215 0.201 0.256 0.059 0.059 max 0.319 0.161 0.484 0.219 0.209 0.264 n.c 0.063 dimensions metric imperial note: for the most current drawings please refer to the ir website at: http://www.irf.com/package/ |
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