j174 / j175 / j176 / j177 / mmbfj175 / mmbfj176 / mmbfj177 n discrete power & signal technologies j174 j175 j176 j177 mmbfj175 mmbfj176 mmbfj177 p-channel switch this device is designed for low level analog switching sample and hold circuits and chopper stabalized amplifiers. sourced from process 88. sot-23 mark: 6w / 6x / 6y g s d g s d to-92 absolute maximum ratings* ta = 25c unless otherwise noted * these ratings are limiting values above which the serviceability of any semiconductor device may be impaired. notes : 1) these ratings are based on a maximum junction temperature of 150 degrees c. 2) these are steady state limits. the factory should be consulted on applications involving pulsed or low duty cycle operations. thermal characteristics ta = 25c unless otherwise noted symbol characteristic max units j174 - j177 *mmbfj175 p d total device dissipation derate above 25 c 350 2.8 225 1.8 mw mw/ c r q jc thermal resistance, junction to case 125 c/w r q ja thermal resistance, junction to ambient 357 556 c/w symbol parameter value units v dg drain-gate voltage - 30 v v gs gate-source voltage 30 v i g f forward gate current 50 ma t j ,t stg operating and storage junction temperature range -55 to +150 c * device mounted on fr-4 pcb 1.6" x 1.6" x 0.06." free datasheet http://
j174 / j175 / j176 / j177 / mmbfj175 / mmbfj176 / mmbfj177 p-channel switch (continued) electrical characteristics ta = 25c unless otherwise noted off characteristics symbol parameter test conditions min max units on characteristics i dss zero-gate voltage drain current* v ds = - 15 v, i gs = 0 j174 j175 j176 j177 - 20 - 7.0 - 2.0 - 1.5 - 100 - 60 - 25 - 20 ma ma ma ma r ds( on ) drain-source on resistance v ds 0.1 v, v gs = 0 j174 j175 j176 j177 85 125 250 300 w w w w * pulse test: pulse width 300 m s, duty cycle 2.0% b (br)gss gate-source breakdown voltage i g = 1.0 m a, v ds = 0 30 v i gss gate reverse current v gs = 20 v, v ds = 0 1.0 na v gs(off) gate-source cutoff voltage v ds = - 15 v, i d = - 10 na j174 j175 j176 j177 5.0 3.0 1.0 0.8 10 6.0 4.0 2.5 v v v v typical characteristics common drain-source -5 -4 -3 -2 -1 0 -20 -16 -12 -8 -4 0 v - drain-source voltage (v) i - drain current (ma) ds d 1.0 v 2.5 v 2.0 v 0.5 v 1.5 v v = 0 v gs t = 25c typ v = 4.5 v gs(off) a 3.0 v 3.5 v r - drain "on" resistance ( w w ) parameter interactions 1 2 5 10 1 5 10 50 100 10 50 100 500 1,000 v - gate cutoff voltage (v) g - transconductance (mmhos) gs (off) fs i , g @ v = 15v, v = 0 pulsed r @ -100 mv, v = 0 v @ v = - 15v, i = - 1.0 m m a gs(off) dss r d i dss ds ds gs ds ds gs fs ds ds g fs free datasheet http://
j174 / j175 / j176 / j177 / mmbfj175 / mmbfj176 / mmbfj177 typical characteristics (continued) transfer characteristics 0 1 2 3 4 -32 -24 -16 -8 0 v - gate-source voltage (v) i - drain current (ma) gs d v = - 4.5 v gs(off) 25c v = - 15 v ds v = 2.5 v gs(off) 125c - 55c 25c 125c - 55c transfer characteristics 0 1 2 3 4 0 4 8 12 16 v - gate-source voltage (v) i - drain current (ma) gs d v = - 4.5 v gs(off) 25c v = - 15 v ds v = 2.5 v gs(off) 125c - 55c 25c - 55c 125c normalized drain resistance vs bias voltage 0 0.2 0.4 0.6 0.8 1 1 2 5 10 20 50 100 v /v - normalized gate-source voltage (v) r - normalized resistance gs ds r = ds v @ 5.0v, 10 m m a gs(off) r ds ________ v gs(off) v gs 1 - gs(off) output conductance vs drain current 0.01 0.1 1 10 1 10 100 1000 i - drain current (ma) g - output conductance ( mhos) d os v = - 4.5v gs(off) f = 1.0 khz m m v = - 2.5v gs(off) -20v -10v -10v -20v -5.0v -5.0v _ _ _ _ transconductance vs drain current 0.1 1 10 100 0.1 0.5 1 5 10 i - drain current (ma) g - transconductance (mmhos) d fs v = 2.5v gs(off) v = -15v f = 1.0 khz dg v = 6.0v gs(off) - 55c 25c 125c 25c _ _ _ _ capacitance vs voltage 0 4 8 12 16 20 1 5 10 100 v - gate-source voltage (v) c (c ) - capacitance (pf) rs gs is c (v = -15v) is ds c (v = -15v) rs ds f = 0.1 - 1.0 mhz p-channel switch (continued) free datasheet http://
j174 / j175 / j176 / j177 / mmbfj175 / mmbfj176 / mmbfj177 p-channel switch (continued) typical characteristics (continued) noise voltage vs frequency 0.01 0.1 1 10 100 1 5 10 50 100 f - frequency (khz) e - noise voltage (nv / hz) n v = - 15v bw = 6.0 hz @ f = 10 hz, 100 hz = 0.2f @ f 3 3 1.0 khz dg i = 5.0 ma d i = - 0.2 ma d ? ? channel resistance vs temperature -50 0 50 100 150 10 50 100 500 1000 t - ambient temperature ( c) r - drain "on" resistance ds a o ( w w ) v = 2.5v gs(off) v = 4.5v gs(off) v = 8.0v gs(off) v = -100 mv v = 0 ds gs power dissipation vs ambient temperature 0 25 50 75 100 125 150 0 50 100 150 200 250 300 350 temperature ( c) p - power dissipation (mw) d o to-92 sot-23 free datasheet http://
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