2SA1575 features high f t. . high breakdown voltage. small reverse transfer capacitance and excellent. high-frequency characteristic. adoption of fbet process. absolute maximum ratings t a =25 parameter symbol rating unit collector-base voltage (emitter open) v cbo -200 v collector-emitter voltage (base open) v ceo -200 v emitter-base voltage (collector open) v ebo -4 v collector current i c -100 ma collector current (pulse) i cp -200 ma collector power dissipation p c 500 1.3 mw w junction temperature t j 150 storage temperature t stg -55to+150 product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
h fe classification marking c d e f hfe 40 to 80 60 to 120 100 to 200 160 to 320 electrical characteristics t a =25 3 parameter symbol test conditions min typ max unit collector-base breakdown voltage bv cbo i c =-10a,i e = 0 -200 v collector-emitter breakdown voltage bv ceo i c =-1ma,r be = -200 v emitter-base breakdown voltage bv ebo i e = -100 a , i c =0 -4 v collector-base cutoff current i cbo v cb = -150 v , i e =0 -0.1 a emitter-base cutoff current i ebo v eb =-2v,i c =0 -1.0 a forward current transfer ratio h fe v ce =-10v,i c =-10ma v ce =-10v,i c =-60ma 40 20 320 collector-emitter saturation voltage v ce(sat) i c =-20ma,i b =-2ma -1.0 v base -emitter saturation voltage v be(sat) i e =-20ma,i b =-2ma -1.0 v transition frequency f t v ce =-30v,i c = -30 ma 400 mhz collector output capacitance (common base, input open circuited) c ob v cb =-30v,i e = 0 , f = 1mhz 2.3 pf reverse transfer capacitance c re v cb = -30 v, f = 1mhz 1.7 pf 2SA1575 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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