geometry backside collector r1 central semiconductor corp. tm process CP591V small signal transistor pnp - amp/switch transistor chip princip al device types 2n2905a 2n2907a cmpt2907a cmst2907a cxt2907a czt2907a pn2907a process epitaxial planar die size 19 x 19 mils die thickness 7.1 mils base bonding pad area 3.5 x 4.3 mils emitter bonding pad area 3.5 x 4.5 mils top side metalization al - 30,000? back side metalization au - 18,000? process details 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r0 (31-may 2006) gross die per 4 inch w afer 30,600
central semiconductor corp. tm process CP591V typical electrical characteristics 145 adams avenue hauppauge, ny 11788 usa tel: (631) 435-1110 fax: (631) 435-1824 www.centralsemi.com r0 (31-may 2006)
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