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| Datasheet File OCR Text: |
| geometry process details principal device types cfsh2-4l gross die per 5 inch wafer 80,698 process CPD87R schottky diode low leakage schottky diode chip process epitaxial planar die size 14.6 x 14.6 mils die thickness 3.9 mils anode bonding pad area 11.8 x 11.8 mils top side metalization al - 30,000? back side metalization au - 12,000? www.centralsemi.com r1 (22-march 2010)
process CPD87R typical electrical characteristics www.centralsemi.com r1 (22-march 2010) |
Price & Availability of CPD87R
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