bsn20 document number: ds31898 rev. 6 - 2 1 of 6 www.diodes.com july 2011 ? diodes incorporated bsn20 new product n-channel enhancement mode field mosfet product summary v (br)dss r ds(on) i d t a = 25c 50v 1.8? @ v gs = 10v 500ma 2.0? @ v gs = 4.5v 450ma description and applications this new generation mosfet has been designed to minimize the on- state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal fo r high efficiency power management applications. ? backlighting ? dc-dc converters ? power management functions features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? lead free by design/rohs compliant (note 1) ? "green" device (note 2) ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic ?green? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: matte tin finish annealed over alloy 42 leadframe (lead free plating). solderable per mil-std-202, method 208 ? terminal connections: see diagram ? weight: 0.008 grams (approximate) ordering information (note 3) part number case packaging BSN20-7 sot23 3000/tape & reel notes: 1. no purposefully added lead. 2. diodes inc.?s ?green? policy can be found on our website at http://www.diodes.com. 3. for packaging details, go to our website at http://www.diodes.com marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d sot23 top view e q uivalent circuit to p view source gate drain d g s n20 = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) n20 yw
bsn20 document number: ds31898 rev. 6 - 2 2 of 6 www.diodes.com july 2011 ? diodes incorporated bsn20 new product maximum ratings characteristic symbol value units drain-source voltage v dss 50 v gate-source voltage v gss 20 v continuous drain current @ t sp = 25c (note 4) steady state t a = 25c t a = 100c i d 500 300 ma pulsed drain current @ t sp = 25c (notes 4 & 5) i dm 1.2 a thermal characteristics characteristic symbol value units power dissipation, @t a = 25c (note 4) p d 600 mw thermal resistance, junction to ambient @t a = 25c (note 4) r ja 200 c/w power dissipation, @t sp = 25c (note 4) p d 920 mw thermal resistance, @t sp = 25c (note 4) r jsp 136 c/w operating and storage temperature range t j , t stg -55 to +150 c . electrical characteristics @t a = 25c unless otherwise specified characteristic symbol min typ max unit test condition off characteristics (note 6) drain-source breakdown voltage bv dss 50 - - v v gs = 0v, i d = 250 a zero gate voltage drain current t j = 25c i dss - - 0.5 a v ds = 50v, v gs = 0v gate-body leakage i gss - - 100 na v gs = 20v, v ds = 0v on characteristics (note 6) gate threshold voltage v gs ( th ) 0.4 1.0 1.5 v v ds = v gs , i d = 250 a static drain-source on-resistance r ds (on) - 1.3 1.6 1.8 2.0 v gs = 10v, i d = 0.22a v gs = 4.5v, i d = 0.1a forward transfer admittance |y fs | 40 320 - ms v ds = 10v, i d = 0.1a diode forward voltage v sd - 1.0 1.5 v v gs = 0v, i s = 180ma source (diode forward) current i s - - 194 ma t sp = 25c peak source (diode forward) current i sm - - 1.2 a t sp = 25c (notes 3 & 4) dynamic characteristics (note 7) input capacitance c iss - 21.8 40 pf v ds = 10v, v gs = 0v, f = 1.0mhz output capacitance c oss - 5.6 15 pf reverse transfer capacitance c rss - 3.3 10 pf gate resistance r g - 49 - ? v ds =0v, v gs = 0v, f = 1mhz total gate charge q g - 800 - pc v gs = 10v, v dd = 25v, i d = 250ma gate-source charge q g s - 100 - pc gate-drain charge q g d - 100 - pc turn-on delay time t d ( on ) - 2.93 - ns v dd = 30v, v gen = 10v, r l = 150 ? , r gen = 50 ? , i d = 0.2a turn-on rise time t r - 2.99 - ns turn-off delay time t d ( off ) - 9.45 - ns turn-off fall time t f - 8.3 - ns notes: 4. device mounted on fr-4 pcb, with minimum recommended pad layout. 5. repetitive rating, pulse width limited by junction temperature. 6. short duration pulse test used to minimize self-heating effect. 7. guaranteed by design. not subject to production testing.
bsn20 document number: ds31898 rev. 6 - 2 3 of 6 www.diodes.com july 2011 ? diodes incorporated bsn20 new product fig 1. normalized total power dissipation as a function of solder point temperature 0 20 40 60 80 100 120 25 50 75 100 125 150 175 t , solder point temperature (c) s p , power dissipation (%) d 0 20 40 60 80 100 120 i, n o r malized c o n t i n u o u s c u r r e n t (%) der fig 2. normalized continuous current vs. solder point temperature 0 50 75 100 125 150 175 t , solder point temperature (c) s 25 fig. 3 soa, safe operation area 0.1 1 10 100 v , drain-soure voltage (v) ds r ds(on) limited i, d r ain c u r r en t (a) d 0.001 0.01 0.1 1 t = 150c t = 25c single pulse j(max) a p = 10s w p = dc w p = 1s w p = 100ms w p = 10ms w p = 1ms w p = 100s w p = 10s w z, t r ansien t t h e r mal r esis t an c e ( c /w) th(j-sp) 1 10 100 1,000 0.00001 0.0001 0.001 0.01 0.1 1 10 fig. 4 transient thermal response t , pulse duration time (s) 1 d = 0.5 d = 0.3 d = 0.1 d = 0.05 d = 0.02 d = single pulse duty cycle, d = t /t 12
bsn20 document number: ds31898 rev. 6 - 2 4 of 6 www.diodes.com july 2011 ? diodes incorporated bsn20 new product 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0 v , drain-source voltage (v) fig. 5 drain-source current vs. drain-source voltage ds i, d r ain-s o u r c e c u r r en t (a) d v = 3.0v gs v = 4.0v gs v = 4.5v gs v = 10v gs 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.5 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage (v) fig. 6 transfer characteristics gs i, d r ain-s o u r c e c u r r en t (a) d 150 c 25 c v = 5v ds 0 1 2 3 4 5 6 7 8 9 10 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 i , drain-current (a) fig. 7 drain-source on-resistance vs. drain-current d r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = 4.5v gs v = v gs 10 v = .5v gs 3 v = 4.v gs 0 0 0.5 1.0 1.5 2.0 2.5 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) fig. 8 drain-source on-resistance vs. junction temperature j r , d r ain-s o u r c e o n- r esis t an c e ( ) ds(on) v = 4.5v gs v = 10v gs i = a d 200m i = 500 a d m 0 0.4 0.8 1.2 1.6 2.0 2.4 -50 -25 0 25 50 75 100 125 150 t , junction temperature (c) fig. 9 gate threshold voltage vs. junction temperature j v, g a t e t h r es h o ld v o l t a g e (v) gs(th) i = 1.0ma d i = a d 250 0 0.5 1 1.5 2 2.5 3 3.5 4 v , gate-source voltage (v) fig. 10 transfer characteristics gs 0 0.1 0.2 0.3 0.4 0.5 i, d r ain-s o u r c e c u r r en t (a) d -55 c 150 c 25 c 125 c 85 c
bsn20 document number: ds31898 rev. 6 - 2 5 of 6 www.diodes.com july 2011 ? diodes incorporated bsn20 new product fig. 11 typical transfer characteristic 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 i , drain-current (a) d g , forward transconductance (s) fs 25 c 150 c 0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40 v , drain-source voltage (v) fig. 12 capacitance vs. drain-source voltage ds c , c a p a c i t an c e (p f ) c rss c oss c iss fig. 13 source current vs. diode forward voltage 0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 v , diode forward voltage (v) sd i, s o u r c e c u r r e n t (a) s 25 c 150 c package outline dimensions sot23 dim min max typ a 0.37 0.51 0.40 b 1.20 1.40 1.30 c 2.30 2.50 2.40 d 0.89 1.03 0.915 f 0.45 0.60 0.535 g 1.78 2.05 1.83 h 2.80 3.00 2.90 j 0.013 0.10 0.05 k 0.903 1.10 1.00 k1 - - 0.400 l 0.45 0.61 0.55 m 0.085 0.18 0.11 0 8 - all dimensions in mm a m j l d f b c h k g k1
bsn20 document number: ds31898 rev. 6 - 2 6 of 6 www.diodes.com july 2011 ? diodes incorporated bsn20 new product suggested pad layout important notice diodes incorporated makes no warranty of any kind, express or implied, with regards to this document, including, but not limited to, the implied warranties of merchantability and fitness for a particular purpose (and their equivalents under the laws of any jurisdiction). diodes incorporated and its subsidiaries rese rve the right to make modifications, enhancements, improvements, corrections or ot her changes without further notice to this document and any product descri bed herein. diodes incorporated does not assume any liability arising out of the application or use of this document or any product described herein; neither does diodes incorporated convey any license under its patent or trademark rights, nor the rights of others. any customer or user of this document or products described herein in such applica tions shall assume all risks of such use and will agree to hold diodes incorporated and all the companies whose products are represented on diodes incorporated website, harmless against all damages. diodes incorporated does not warrant or accept any liability whatsoever in respect of any products purchased through unauthoriz ed sales channel. should customers purchase or use diodes inco rporated products for any unintended or una uthorized application, customers shall i ndemnify and hold diodes incorporated and its representativ es harmless against all claims, damages, expenses, and attorney fees arising out of, directly or indirectly, any claim of personal injury or death a ssociated with such unintended or unauthorized application. products described herein may be covered by one or more united states, international or foreign patents pending. product names and markings noted herein may also be covered by one or more united states, international or foreign trademarks. life support diodes incorporated products are specifically not authorized for use as critical com ponents in life support devices or systems without the express written approval of the chief executive offi cer of diodes incorporated. as used herein: a. life support devices or syst ems are devices or systems which: 1. are intended to implant into the body, or 2. support or sustain life and whose failure to perform when proper ly used in accordance with instructions for use provided in the labeling can be reasonably expected to result in significant injury to the user. b. a critical component is any component in a life support dev ice or system whose failure to perform can be reasonably expect ed to cause the failure of the life support device or to affect its safety or effectiveness. customers represent that they have all necessary expertise in the safety and regulatory ramifi cations of their life support dev ices or systems, and acknowledge and agree that they are solely responsible for all legal, regulatory and safety-rel ated requirements concerning the ir products and any use of diodes incorporated products in such safety-critical, life support devices or systems, notwithstanding any devices- or s ystems-related information or support that may be provided by diodes incorporated. further, customers must fully indemnify diodes incorporate d and its representatives against any damages arisi ng out of the use of diodes incorporated pr oducts in such safety-critical, life suppor t devices or systems. copyright ? 2011, diodes incorporated www.diodes.com dimensions value (in mm) z 2.9 x 0.8 y 0.9 c 2.0 e 1.35 x e y c z
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