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  this is information on a product in full production. april 2012 doc id 16785 rev 3 1/18 18 STB18NF25, std18nf25 n-channel 250 v, 0.14 , 17 a low gate charge stripfet? ii power mosfet in d 2 pak and dpak packages datasheet ? production data low gate charge 100% avalanche tested exceptional dv/dt capability application switching applications ? automotive description these power mosfets have been developed using stmicroelectronics? unique stripfet process, which is specifically designed to minimize input capacitance and gate charge. this renders the devices suitable for use as primary switch in advanced high-efficiency isolated dc- dc converters for telecom and computer applications, and applications with low gate charge driving requirements. figure 1. internal schematic diagram features type v dss r ds(on) max i d p tot STB18NF25 250 v < 0.165 17 a 110 w std18nf25 250 v < 0.165 17 a 110 w dpak d2pak 1 3 tab 1 3 tab !-v $ 4!" ' 3 table 1. device summary order codes marking package packaging STB18NF25 18nf25 d2pak tape and reel std18nf25 18nf25 dpak tape and reel www.st.com
contents STB18NF25, std18nf25 2/18 doc id 16785 rev 3 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
STB18NF25, std18nf25 electrical ratings doc id 16785 rev 3 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage 250 v v gs gate-source voltage 20 v i d drain current (continuous) at t c = 25 c 17 a i d drain current (continuous) at t c =100 c 12 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 68 a p tot total dissipation at t c = 25 c 110 w dv/dt (2) 2. i sd 17 a, di/dt 200 a/s, v dd 80%v (br)dss peak diode recovery voltage slope 10 v/ns t j t stg operating junction temperature storage temperature -55 to 175 c table 3. thermal data symbol parameter value unit d 2 pa k d pa k r thj-case thermal resistance junction-case max 1.36 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4, 2 oz copper board. thermal resistance junction-pcb max 30 50 c/w table 4. avalanche data symbol parameter value unit i ar avalanche current, repetitive or not repetitive (pulse width limited by tjmax) 17 a e as single pulse avalanche energy (starting tj=25 c, i d =i ar , v dd =50 v) 170 mj
electrical characteristics STB18NF25, std18nf25 4/18 doc id 16785 rev 3 2 electrical characteristics (t case =25 c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage v gs = 0, i d = 1 ma 250 v i dss zero gate voltage drain current v gs = 0, v ds = 250 v, 1 a v gs = 0 v ds = 250 v,tc=125 c 10 a i gss gate body leakage current v ds = 0, v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on- resistance v gs = 10 v, i d = 8.5 a 0.14 0.165 table 6. dynamic symbol parameter test conditions min. typ. max. unit g fs (1) 1. pulsed: pulse duration=300s, duty cycle 1.5% forward transconductance v ds = 15 v, i d = 8.5 a - 14 - s c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds =25 v, f=1 mhz, v gs =0 - 1000 178 28 - pf pf pf c o(tr) equivalent capacitance time related v ds = 0 to 200 v, v gs =0 - 106 - pf c o(er) equivalent capacitance energy related -79- pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 200 v, i d = 17 a v gs =10 v (see figure 17 ) - 29.5 4.8 15.6 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -2-
STB18NF25, std18nf25 electrical characteristics doc id 16785 rev 3 5/18 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd =125 v, i d =8.5 a, r g =4.7 , v gs =10 v (see figure 16 ) - 8.8 17.2 - ns ns t d(off) t f turn-off delay time fall time v dd =125 v, i d =8.5 a, r g =4.7 , v gs =10 v (see figure 16 ) - 21 8.8 - ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 17 68 a a v sd (2) 2. pulsed: pulse duration=300 s, duty cycle 1.5% forward on voltage i sd =17 a, v gs =0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s, v dd = 50 v (see figure 18 ) - 157 0.91 11.6 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 17 a, di/dt = 100 a/s, v dd = 50 v, tj=150 c (see figure 18 ) - 196 1.34 13.7 ns c a
electrical characteristics STB18NF25, std18nf25 6/18 doc id 16785 rev 3 2.1 electrical characteristics (curves) figure 2. safe operating area for d2pak figure 3. thermal impedance for d2pak figure 4. safe operating area for dpak figure 5. thermal impedance for dpak figure 6. output characteristics figure 7. transfer characteristics i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=175c tc=25c s inlge p u l s e am05549v1 i d 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=175c, tc=25c s ingle p u l s e 100 am05561v1 i d 25 20 5 0 0 10 v d s (v) 20 (a) 3 5 40 5v 6v 7v v g s =10v 10 15 3 0 45 am05550v1 i d 20 10 0 0 4 v g s (v) 8 (a) 2 6 3 0 v d s =10v am05551v1
STB18NF25, std18nf25 electrical characteristics doc id 16785 rev 3 7/18 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on-resistance figure 10. output capacitance stored energy figure 11. capacitance variations figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature v g s 6 4 2 0 0 q g (nc) (v) 20 8 10 10 v dd =200v i d =17a 12 150 100 50 0 200 v d s v g s 3 0 am05552v1 r d s (on) 0.1 3 0.12 0.11 0.10 5 i d (a) ( ) 0.14 10 15 am0555 3 v1 e o ss 1.5 1.0 0.5 0 0 50 v d s (v) ( j) 200 2.0 100 150 2.5 3 .0 3 .5 4.0 am05554v1 c 1000 100 10 0.1 10 v d s (v) (pf) 1 100 ci ss co ss cr ss am05555v1 v g s (th) 0.60 0.50 0.40 0. 3 0 -100 t j (c) (norm) -50 0.70 50 100 150 0.90 0. 8 0 1.00 1.10 0 am05556v1 r d s (on) 2.0 1.5 1.0 0.5 -50 0 t j (c) (norm) 50 100 2.5 150 -100 am05557v1
electrical characteristics STB18NF25, std18nf25 8/18 doc id 16785 rev 3 figure 14. source-drain diode forward characteristics figure 15. normalized b vdss vs temperature v s d 0 10 i s d (a) (v) 5 15 20 0.4 0.5 0.6 0.7 0. 8 0.9 1.0 t j =-50c t j =175c t j =25c am0555 8 v1 bv d ss -100 t j (c) (norm) -50 50 0 0.90 0.95 1.00 1.05 1.10 1.15 100 150 am05559v1
STB18NF25, std18nf25 test circuits doc id 16785 rev 3 9/18 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive waveform figure 21. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STB18NF25, std18nf25 10/18 doc id 16785 rev 3 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 9. d2pak (to-263) mechanical data dim. mm min. typ. max. a4.40 4.60 a1 0.03 0.23 b0.70 0.93 b2 1.14 1.70 c0.45 0.60 c2 1.23 1.36 d8.95 9.35 d1 7.50 e 10 10.40 e1 8.50 e2.54 e1 4.88 5.28 h 15 15.85 j1 2.49 2.69 l2.29 2.79 l1 1.27 1.40 l2 1.30 1.75 r0.4 v2 0 8
STB18NF25, std18nf25 package mechanical data doc id 16785 rev 3 11/18 figure 22. d2pak (to-263) drawing figure 23. d2pak footprint (a) a. all dimensions are in millimeters 0079457_t 16.90 12.20 9.75 3 .50 5.0 8 1.60 footprint
package mechanical data STB18NF25, std18nf25 12/18 doc id 16785 rev 3 table 10. dpak (to-252) mechanical data dim. mm min. typ. max. a2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b0.64 0.90 b4 5.20 5.40 c0.45 0.60 c2 0.48 0.60 d6.00 6.20 d1 5.10 e6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h 9.35 10.10 l1 1.50 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8
STB18NF25, std18nf25 package mechanical data doc id 16785 rev 3 13/18 figure 24. dpak (to-252) drawing 006 8 772_i
packaging mechanical data STB18NF25, std18nf25 14/18 doc id 16785 rev 3 5 packaging mechanical data table 11. d2pak (to-263) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 10.5 10.7 a 330 b0 15.7 15.9 b 1.5 d 1.5 1.6 c 12.8 13.2 d1 1.59 1.61 d 20.2 e 1.65 1.85 g 24.4 26.4 f 11.4 11.6 n 100 k0 4.8 5.0 t 30.4 p0 3.9 4.1 p1 11.9 12.1 base qty 1000 p2 1.9 2.1 bulk qty 1000 r50 t 0.25 0.35 w 23.7 24.3 table 12. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d 1.5 1.6 d 20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500
STB18NF25, std18nf25 packaging mechanical data doc id 16785 rev 3 15/18 figure 25. tape p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 table 12. dpak (to-252) tape and reel mechanical data (continued) tape reel dim. mm dim. mm min. max. min. max. p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us top cover t a pe am0 88 52v2
packaging mechanical data STB18NF25, std18nf25 16/18 doc id 16785 rev 3 figure 26. reel a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2
STB18NF25, std18nf25 revision history doc id 16785 rev 3 17/18 6 revision history table 13. document revision history date revision changes 16-nov-2009 1 first release 19-feb-2010 2 v ds value in ta b l e 8 has been corrected. 26-apr-2012 3 updated e as in table 4: avalanche data , section 4: package mechanical data and section 5: packaging mechanical data . minor text changes.
STB18NF25, std18nf25 18/18 doc id 16785 rev 3 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a particular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by two authorized st representatives, st products are not recommended, authorized or warranted for use in military, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or register ed trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2012 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com


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